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ZHCSEL3B November 2015 – January 2016 UCC28881

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

D|7
- MPDS347D

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購信息

zhcsel3b_oa

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) ⁽¹⁾ ⁽²⁾ ⁽⁴⁾

		MIN	MAX	UNIT
HVIN		–0.3	700 ⁽³⁾	V
DRAIN		Internally clamped	700 ⁽³⁾	V
I_DRAIN	Positive drain current single pulse, pulse max duration 25 μs		770 ⁽⁵⁾	mA
I_DRAIN	Negative drain current	–700		mA
FB		–0.3	6	V
VDD	VDD is supplied from low impedance source	–0.3	6	V
I_VDD	VDD is supplied from high impedance source		400	µA
T_J	Junction temperature		150	°C
	Lead temperature 1.6 mm (1/16 inch) from case 10 seconds		260	°C
T_stg	Storage temperature range	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltages are with respect to GND. Currents are positive into, negative out of the specified terminal. These ratings apply over the operating ambient temperature ranges unless otherwise noted.

(3) T_A = 25°C

(4) The device is not rated to withstand operating conditions when multiple parameters are at or near, absolute maximum ratings.

(5) The MOSFET drain to source voltage is less than 400V

7.2 ESD Ratings

				UNIT
V_(ESD)	Electrostatic discharge	Human Body Model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins except HVIN pin ⁽¹⁾	±2000	V
		Human Body Model (HBM) per ANSI/ESDA/JEDEC JS-001, HVIN pin ⁽¹⁾	±1500	V
		Charged device model (CDM), per JEDEC specification JESD22-C101, all pins ⁽²⁾	±500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
V_VDD	Voltage On VDD pin		5		V
V_FB	Voltage on FB pin	–0.2		5	V
T_J	Operating junction temperature	–40		+125	°C

7.4 Thermal Information

THERMAL METRIC ⁽¹⁾		UCC28881	UNIT
		D (SOIC)
		7 PINS
R_θJA	Junction-to-ambient thermal resistance	134.4	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	42.6	°C/W
R_θJB	Junction-to-board thermal resistance	85	°C/W
ψ_JT	Junction-to-top characterization parameter	6.4	°C/W
ψ_JB	Junction-to-board characterization parameter	76	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

V_HVIN = 30 V, T_A = T_J = –40°C to +125°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_HVIN(min)	Minimum Voltage to start-up				30	V
I_NL	Internal supply current, no load	FB = 1.25 V (> V_{FB_TH})		58	100	µA
I_FL	Internal supply current, full load	FB = 0.75 V (> V_{FB_TH})		86	120	µA
I_CH0	Charging VDD Cap current	V_VDD = 0 V,	–3.8	–1.6	–0.4	mA
I_CH1	Charging VDD Cap current	V_VDD = 4.4V, V_FB = 1.25 V	–3.40	–1.30	–0.25	mA
V_VDD	Internally regulated low Voltage supply (supplied from HVIN pin)		4.5	5.0	5.5	V
V_{FB_TH}	FB pin reference threshold		0.96	1.03	1.105	V
V_VDD(on)	VDD turn-on threshold	VDD low-to-high	3.55	3.92	4.28	V
V_VDD(off)	VDD turn-off threshold	VDD high-to-low	3.28	3.62	3.89	V
ΔV_VDD(uvlo)	VDD UVLO Hysteresis	VDD high-to-low	0.27	0.345	0.39	V
D_MAX	Maximum Duty Cycle	FB = 0.75 V	45%		55%
I_LIMIT	Current Limit	Static, T_A = –40°C			630	mA
		Static, T_A = 25°C	330	440	570	mA
		Static, T_A = 125°C	315			mA
T_J(stop)	Thermal Shutdown Temperature	Internal junction temperature		138.5	150	°C
T_J(hyst)	Thermal Shutdown Hysteresis	Internal junction temperature		37.	45	°C
BV	Power MOSFET Breakdown Voltage	T_J = 25°C	700			V
R_DS(on)	Power MOSFET On-Resistance (includes internal sense-resistor)	I_D = 60 mA, T_J = 25°C		14	18	Ω
R_DS(on)		I_D = 60 mA, T_J = 125°C		24	30	Ω
DRAIN_I_LEAKAGE	Power MOSFET off state leakage current	V_DRAIN = 700V, T_J = 25°C			5	µA
DRAIN_I_LEAKAGE	Power MOSFET off state leakage current	V_DRAIN = 400 V, T_J = 125°C			20	µA
HVIN_I_OFF	HVIN off state current	V_HVIN = 700 V, T_J = 25°C, V_VDD = 5.8 V	4.0	7.5	36.0	µA
HVIN_I_OFF	HVIN off state current	V_HVIN = 400 V, T_J = 125°C, V_VDD = 5.8 V			20	µA
V_VDD(clamp)	VDD clamp voltage	I_VDD = 250 µA	6.0	6.7	7.5	V

7.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)

		MIN	TYP	MAX	UNIT
f_SW(max)	Maximum switching frequency	52	62	75	kHz
t_{ON_MAX}	Maximum switch on time (current limiter not triggered), FB = 0.75 V	6.5	8.3	9.7	µs
t_{OFF_MIN}	Minimum switch off time follows every t_ON time, FB = 0.75 V	6.5	8.3	9.7	µs
t_MIN	Minimum on time	0.17	0.27	0.30	µs
t_OFF(ovl)	Max off time (OL condition), t_OFF(ovl) = t_SW – t_ON(max)	130	200	270	µs
t_{ON_TO}	Inductor current run away protection time threshold		450		ns