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ZHCSIS9A September 2018 – December 2018 TUSB217-Q1

PRODUCTION DATA.

封裝選項(xiàng)

請(qǐng)參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。

機(jī)械數(shù)據(jù) (封裝 | 引腳)

RGY|14

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購(gòu)信息

6.5 Electrical Characteristics

Over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP ⁽¹⁾	MAX	UNIT
POWER
I_{ACTIVE_HS}	High Speed Active Current	USB channel = HS mode. 480 Mbps traffic. V_CC supply stable, with Boost = Max		22	36	mA
I_{IDLE_HS}	High Speed Idle Current	USB channel = HS mode, no traffic. V_CCsupply stable, Boost = Max		22	36	mA
I_{HS_SUPSPEND}	High Speed Suspend Current	USB channel = HS Suspend mode. V_CCsupply stable		0.75	1.4	mA
I_FS	Full-Speed Current	USB channel = FS mode, 12 Mbps traffic, V_ccsupply stable		0.75	1.4	mA
I_DISCONN	Disconnect Power	Host side application. No device attachment.		0.80	1.4	mA
I_SHUTDN	Shutdown Power	RSTN driven low, V_CCsupply stable		35	95	µA
CONTROL PIN LEAKAGE
I_{LKG_FS}	Pin failsafe leakage current for SDA, RSTN	V_CC = 0 V, pin at V_{IH, max}		10	15	µA
I_{LKG_FS}	Pin failsafe leakage current for BOOST, RX_SEN	V_CC = 0 V, pin at V_{IH, max}		6	10	µA
I_{LKG_FS}	Pin failsafe leakage current for SCL	V_CC = 0 V, pin at V_{IH, max}			70	nA
INPUT RSTN
V_IH	High level input voltage		1.5		3.6	V
V_IL	Low-level input voltage		0		0.5	V
I_IH	High level input current	V_IH = 3.6 V, R_PU enabled			±15	µA
I_IL	Low level input current	V_IL = 0V, R_PU enabled			±20	µA
INPUT RX_SEN (3-level input, for mid level leave pin floating)
V_IH	High level input voltage R_RXSEN1=47kΩ, R_RXSEN2=10kΩ	VCC<=4.3V	1.8		3.6	V
V_IH	High level input voltage R_RXSEN1=37kΩ, R_RXSEN2=47kΩ	VCC>4.3V	2.0		3.6	V
V_IL	Low level input voltage 22kΩ <= R_RXSEN1 <= 33kΩ				0.4	V
INPUT BOOST
R_{BOOST_LVL0}	External pulldown resistor for BOOST Level 0				160	Ω
R_{BOOST_LVL1}	External pulldown resistor for BOOST Level 1		1.5	1.8	2	kΩ
R_{BOOST_LVL2}	External pulldown resistor for BOOST Level 2		3.4	3.6	3.96	kΩ
R_{BOOST_LVL3}	External pulldown resistor for BOOST Level 3		7.5			kΩ
OUTPUTS CD, ENA_HS
V_OH	High level output voltage	I_O = –50 µA, VCC >= 3.0V	2.5			V
V_OH	High level output voltage	I_O = –50 µA, VCC = 2.3V	1.8			V
V_OL	Low level output voltage	I_O = 50 µA			0.3	V
I2C
C_{I2C_BUS}	I²C Bus Capacitance		4		150	pF
I_OL	I²C open drain output current	V_OL = 0.4V	1.5			mA
V_IL	V_{I2C_BUS} = 1.8V +/-10%	R_Pull-up =1.6kΩ to 2.5kΩ, % of V_{I2C_BUS}			25	%
V_IL	V_{I2C_BUS} = 3.3V +/-10%	R_Pull-up =2.8kΩ to 7kΩ, % of V_{I2C_BUS}			25	%
V_IH	V_{I2C_BUS} = 1.8V +/-10%	R_Pull-up =1.6kΩ to 2.5kΩ, % of V_{I2C_BUS}	75			%
V_IH	V_{I2C_BUS} = 3.3V +/-10%	R_Pull-up =2.8kΩ to 7kΩ, % of V_{I2C_BUS}	75			%
R_Pull-up	V_{I2C_BUS} = 1.8V +/-10%		1.6	2	2.5	kΩ
R_Pull-up	V_{I2C_BUS} = 3.3V +/-10%		2.8	4.7	7	kΩ
SCL Frequency					100	kHz
DxP, DxM
C_{IO_DXX}	Capacitance to GND	Measured with VNA at 240 MHz, V_CC supply stable, Redriver off		2.5		pF

(1) All typical values are at V_CC = 5 V, and T_A = 25°C.