ZHCSQN3A June 2022 – October 2022 TSM36A
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | Device | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|---|
| VRWM | Reverse stand-off voltage | TSM36A | 0 | 36 | V | ||
| VBRF | Forward breakdown voltage(1) | IIO = –10 mA | TSM36A | 0.8 | V | ||
| VBRR | Reverse breakdown voltage(1) | IIO = 10 mA | TSM36A | 37.8 | 44.2 | V | |
| VCLAMP | Clamping voltage(2) | IPP = 25A, tp = 8/20 μs, from IO to GND | TSM36A | 50 | V | ||
| IPP = 40 A, tp = 8/20 μs, from IO to GND | TSM36A | 57 | |||||
| ILEAK | Leakage current | VIO = +36 V | TSM36A | 1 | μA | ||
| RDYN | Dynamic resistance | tp = 8/20 μs, from IO to GND | TSM36A | 0.5 | Ω | ||
| CIO-GND | Line capacitance | VIO = 0 V, f = 1 MHz, Vp-p = 30 mV | TSM36A | 50 | 80 | pF | |