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ZHCSE12E June 2015 – October 2019 TS5A22362

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

DGS|10
- MPDS035C
YZP|10
- MXBG069I
DRC|10
- MPDS117L

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

DRC|10
- QFND013N

訂購信息

6.7 Electrical Characteristics for 5-V Supply

V_CC = 4.5 V to 5.5 V, T_A = –40°C to 85°C (unless otherwise noted) ⁽¹⁾

PARAMETER		TEST CONDITIONS		T_A	V_CC	MIN	TYP	MAX	UNIT
ANALOG SWITCH
V_COM, V_NO, V_NC	Analog signal range					V_CC – 5.5		V_CC	V
R_on	ON-state resistance	V_NC or V_NO = V_CC, 1.6 V, V_CC = –5.5 V, I_COM = –100 mA	COM to NO or NC, see Figure 13	25°C	4.5 V		0.52	0.74	Ω
R_on	ON-state resistance	V_NC or V_NO = V_CC, 1.6 V, V_CC = –5.5 V, I_COM = –100 mA	COM to NO or NC, see Figure 13	Full	4.5 V			0.83	Ω
ΔR_on	ON-state resistance match between channels	V_NC or V_NO = 1.6 V, I_COM = –100 mA	COM to NO or NC, see Figure 13	25°C	4.5 V		0.04	0.23	Ω
ΔR_on	ON-state resistance match between channels	V_NC or V_NO = 1.6 V, I_COM = –100 mA	COM to NO or NC, see Figure 13	Full	4.5 V			0.30	Ω
R_on(flat)	ON-state resistance flatness	V_NC or V_NO = V_CC, 1.6 V, V_CC = –5.5 V, I_COM = –100 mA	COM to NO or NC, see Figure 13	25°C	4.5 V		0.076	0.46	Ω
R_on(flat)	ON-state resistance flatness	V_NC or V_NO = V_CC, 1.6 V, V_CC = –5.5 V, I_COM = –100 mA	COM to NO or NC, see Figure 13	Full	4.5 V			0.5	Ω
I_NC(OFF), I_NO(OFF)	NC, NO OFF leakage current	V_NC = 4.5 V, V_CC – 5.5 V, V_COM = V_CC – 5.5 V, 4.5 V, V_NO = Open, COM to NO or V_NO = 4.5 V, V_CC – 5.5 V, V_{COM =} V_CC – 5.5 V, 4.5 V, V_NC = Open, COM to NC	See Figure 14	25°C	5.5 V	–50		50	nA
I_NC(OFF), I_NO(OFF)	NC, NO OFF leakage current		See Figure 14	Full	5.5 V	–375		375	nA
I_COM(ON)	COM ON leakage current	V_NC and V_NO = Floating, V_COM = V_CC, V_CC – 5.5 V	See Figure 15	25°C	5.5 V	–50		50	nA
I_COM(ON)	COM ON leakage current	V_NC and V_NO = Floating, V_COM = V_CC, V_CC – 5.5 V	See Figure 15	Full	5.5 V	–375		375	nA
DIGITAL CONTROL INPUTS (IN) ⁽²⁾
V_IH	Input logic high			Full		2.4		5.5	V
V_IL	Input logic low			Full				0.8	V
I_IH, I_IL	Input leakage current	V_IN = V_CC or 0		25°C	5.5 V	–250		250	nA
I_IH, I_IL	Input leakage current	V_IN = V_CC or 0		Full	5.5 V	–250		250	nA
DYNAMIC
t_ON	Turnon time	V_COM = V_CC, R_L = 300 Ω	C_L = 35 pF, see Figure 17	25°C	5 V		27	80	ns
t_ON	Turnon time	V_COM = V_CC, R_L = 300 Ω	C_L = 35 pF, see Figure 17	Full	4.5 V to 5.5 V			80	ns
t_OFF	Turnoff time	V_COM = V_CC, R_L = 300 Ω	C_L = 35 pF, see Figure 17	25°C	5 V		13	70	ns
t_OFF	Turnoff time	V_COM = V_CC, R_L = 300 Ω	C_L = 35 pF, see Figure 17	Full	4.5 V to 5.5 V			70	ns
t_BBM	Break-before-make time	V_NC = V_NO = V_CC/2 R_L = 300 Ω	C_L = 35 pF, see Figure 18	25°C	5 V	1	3.5		ns
Q_C	Charge injection	V_GEN = 0, R_GEN = 0	C_L = 1 nF, see Figure 22	25°C	5 V		150		pC
C_NC(OFF), C_NO(OFF)	NC, NO OFF capacitance	V_NC or V_NO = V_CC or V_CC – 5.5 V	See Figure 16	25°C	5 V		70		pF
C_COM(ON)	NC, NO, COM ON capacitance	V_COM= V_CC or GND,	See Figure 16	25°C	5 V		370		pF
C_I	Digital input capacitance	V_I = V_CC or GND	See Figure 16	25°C	5 V		2.6		pF
BW	Bandwidth	R_L = 50 Ω	See Figure 18	25°C	5 V		18.3		MHz
O_ISO	OFF isolation	R_L = 50 Ω	f = 100 kHz, see Figure 20	25°C	5 V		–70		dB
X_TALK	Crosstalk	R_L = 50 Ω	f = 100 kHz, see Figure 21	25°C	5 V		–78		dB
THD	Total harmonic distortion	R_L = 600 Ω, C_L = 35 pF	f = 20 Hz to 20 kHz, see Figure 23	25°C	5 V		0.009%
SUPPLY
I_CC	Positive supply current	V_COM and V_IN = V_CC or GND, V_NC and V_NO = Floating		25°C	5.5 V		0.2	1.3	μA
		V_COM and V_IN = V_CC or GND, V_NC and V_NO = Floating		Full				3.5
		V_COM = V_CC – 5.5 V, V_IN = V_CC or GND, V_NC and V_NO = Floating		Full				5

(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum

(2) All unused digital inputs of the device must be held at V_CC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, SCBA004.