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ZHCSCN0B May 2014 – February 2017 TRF3722

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

RGZ|48
- MPQF123F

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

RGZ|48
- QFND031W

訂購信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
Supply voltage	All VCC except VCC_TK	–0.3	+3.6	V
Supply voltage	VCC_TK	–0.3	+5.5	V
Digital I/O voltage		–0.3	3.6	V
Operating junction temperature		–40	150	°C
Storage temperature, T_stg		–40	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±750	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
V_CC	3.3 V power-supply voltage	3	3.3	3.6	V
V_CC	5 V or 3.3 V power-supply voltage, VCC _TK	3	3.3/5	5.5	V
T_J	Operating junction temperature range	–40		125	°C
T_A	Ambient temperature range	–40		85	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TRF3722	UNIT
		RGZ (VQFN)
		48 PINS
R_θJA	Junction-to-ambient thermal resistance	27.5	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	12.8	°C/W
R_θJB	Junction-to-board thermal resistance	4.3	°C/W
ψ_JT	Junction-to-top characterization parameter	0.2	°C/W
ψ_JB	Junction-to-board characterization parameter	4.3	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	0.8	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

Over recommended operating conditions: VCC = 3.3 V, VCC_TK = 5 V, T_A = 25°C. Optimized bias settings as per Table 16.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
DC PARAMETERS
I_CC	3.3 V Supply Current	Typical Operating Mode; LO out = Off		328⁽¹⁾		mA
I_CC	3.3 V Supply Current	Typical Operating Mode; LO out = On		374		mA
I_{CC_TK}	5 V Supply Current			21		mA
P_DISS	Total Power Dissipation	Typical Operating Mode; LO out = Off		1.18		W
		Typical Operating Mode; LO out = On		1.34		W
		Low Power Mode (Mod); LO out = Off		0.91		W
I_PD	Power Down Current	Hardware Power Down		76		mA
I_PD	Power Down Current	Serial interface Power Down		2		mA
RFOUT FREQUENCY
	Frequency		400		4200	MHz
IQ MODULATOR ƒ_LO = 750 MHz
G	Gain	Typical Operating Mode		0.8		dB
	Gain	High Gain Mode		3.6		dB
	Gain Flatness	In 300MHz bandwidth	–0.5		0.5	dB
OP1dB	Output Compression Point			10.2		dBm
OIP3	Output 3rd Order Intercept Point	F_BB = 4.5, 5.5 MHz		31		dBm
OIP2	Output 2nd Order Intercept Point	F_BB = 4.5, 5.5 MHz		62		dBm
SBS	Unadj. SideBand Suppression			–42		dBc
CF	Unadj. Carrier Feedthrough			–50		dBm
NSD_O	Output Noise Spectral Density	BB inputs terminated on 50 Ω		–159		dBm/Hz
HD2_LO	LO Second Harmonic	Measured at 2 x f_LO		–49		dBc
HD3_LO	LO Third Harmonic	Measured at 3 x f_LO		–47		dBc
HD2_BB	Baseband Second Harmonic	Measured at f_LO ± 2 x f_BB		–72		dBc
HD3_BB	Baseband Third Harmonic	Measured at f_LO ± 3 x f_BB		–70		dBc
IQ MODULATOR ƒ_LO = 900 MHz
G	Gain	Typical Operating Mode		0.8		dB
	Gain	High Gain Mode		3.6		dB
	Gain Flatness	In 300MHz bandwidth	–0.5		0.5	dB
OP1dB	Output Compression Point			10		dBm
OIP3	Output 3rd Order Intercept Point	F_BB = 4.5, 5.5 MHz		31		dBm
OIP2	Output 2nd Order Intercept Point	F_BB = 4.5, 5.5 MHz		62.5		dBm
SBS	Unadj. Side Band Suppression			–42.5		dBc
CF	Unadj. Carrier Feed through			–50		dBm
NSD_O	Output Noise Spectral Density	BB inputs terminated on 50 Ω		–159		dBm/Hz
HD2_LO	LO Second Harmonic	Measured at 2 x f_LO		–47		dBc
HD3_LO	LO Third Harmonic	Measured at 3 x f_LO		–54.5		dBc
HD2_BB	Baseband Second Harmonic	Measured at f_LO ± 2 x f_BB		–65.5		dBc
HD3_BB	Baseband Third Harmonic	Measured at f_LO ± 3 x f_BB		–71.5		dBc
IQ MODULATOR ƒ_LO = 1800 MHz
G	Gain	Typical Operating Mode		0.3		dB
	Gain	High Gain Mode		3		dB
	Gain Flatness	In 300 MHz bandwidth	–0.5		0.5	dB
OP1dB	Output Compression Point			13		dBm
OIP3	Output 3rd Order Intercept Point	f_BB = 4.5, 5.5 MHz		29.5		dBm
OIP2	Output 2nd Order Intercept Point	f_BB = 4.5, 5.5 MHz		57		dBm
SBS	Unadj. Side Band Suppression			–54.5		dBc
CF	Unadj. Carrier Feed through			–57		dBm
NSD_O	Output Noise Spectral Density	BB inputs terminated on 50 Ω		–158		dBm/Hz
HD2_LO	LO Second Harmonic	Measured at 2 x f_LO		–36.5		dBc
HD3_LO	LO Third Harmonic	Measured at 3 x f_LO		–33.5		dBc
HD2_BB	Baseband Second Harmonic	Measured at f_LO ± 2 x f_BB		–65.5		dBc
HD3_BB	Baseband Third Harmonic	Measured at f_LO ± 3 x f_BB		–73		dBc
RL_O	RF Output Return Loss			6		dB
IQ MODULATOR ƒ_LO = 2150 MHz
G	Gain	Typical Operating Mode		0.2		dB
	Gain	High Gain Mode		3		dB
	Gain Flatness	In 300 MHz bandwidth	–0.5		0.5	dB
OP1dB	Output Compression Point			11.6		dBm
OIP3	Output 3rd Order Intercept Point	F_BB = 4.5, 5.5 MHz		30		dBm
OIP2	Output 2nd Order Intercept Point	F_BB = 4.5, 5.5 MHz		43		dBm
SBS	Unadj. Side Band Suppression			–43		dBc
CF	Unadj. Carrier Feedt hrough			–42		dBm
NSD_O	Output Noise Spectral Density	BB inputs terminated on 50 Ω		–157		dBm/Hz
HD2_LO	LO Second Harmonic	Measured at 2 x f_LO		–40		dBc
HD3_LO	LO Third Harmonic	Measured at 3 x f_LO		–31		dBc
HD2_BB	Baseband Second Harmonic	Measured at f_LO ± 2 x f_BB		–51		dBc
HD3_BB	Baseband Third Harmonic	Measured at f_LO ± 3 x f_BB		–69		dBc
IQ MODULATOR ƒ_LO = 2700 MHz
G	Gain	Typical Operating Mode		0		dB
	Gain	High Gain Mode		2.4		dB
	Gain Flatness	In 300MHz bandwidth	–0.5		0.5	dB
OP1dB	Output Compression Point			10.4		dBm
OIP3	Output 3rd Order Intercept Point	F_BB = 4.5, 5.5 MHz		29.5		dBm
OIP2	Output 2nd Order Intercept Point	F_BB = 4.5, 5.5 MHz		45.5		dBm
SBS	Unadj. Side Band Suppression			–33		dBc
CF	Unadj. Carrier Feed through			–39.6		dBm
NSD_O	Output Noise Spectral Density	BB inputs terminated on 50 Ω		–156		dBm/Hz
HD2_LO	LO Second Harmonic	Measured at 2 x f_LO		–29		dBc
HD3_LO	LO Third Harmonic	Measured at 3 x f_LO		–37		dBc
HD2_BB	Baseband Second Harmonic	Measured at f_LO ± 2 x f_BB		–53		dBc
HD3_BB	Baseband Third Harmonic	Measured at f_LO ± 3 x f_BB		–68		dBc
IQ MODULATOR ƒ_LO = 3600 MHz
G	Gain	Typical Operating Mode		–2		dB
G	Gain	High Gain Mode		0.4		dB
OP1dB	Output Compression Point			8.7		dBm
OIP3	Output 3rd Order Intercept Point	F_BB = 4.5, 5.5 MHz		24.5		dBm
OIP2	Output 2nd Order Intercept Point	F_BB = 4.5, 5.5 MHz		45.5		dBm
SBS	Unadj. Side Band Suppression			–31.5		dBc
CF	Unadj. Carrier Feed through			–39.5		dBm
HD2_LO	LO Second Harmonic	Measured at 2 x f_LO		–28.4		dBc
HD3_LO	LO Third Harmonic	Measured at 3 x f_LO		–31.5		dBc
HD2_BB	Baseband Second Harmonic	Measured at f_LO ± 2 x f_BB		–55		dBc
HD3_BB	Baseband Third Harmonic	Measured at f_LO ± 3 x f_BB		–65		dBc
BASEBAND INPUTS
V_CM	Common Mode Voltage	Baseband I/Q input	0	0.25	0.5	V
BW_BB	Baseband Bandwidth	1 dB Bandwidth		900		MHz
Zin_BB	Baseband Input Impedance	Resistance		5		kΩ
Zin_BB	Baseband Input Impedance	Capacitance		4		pF
REFERENCE OSCILLATOR PARAMETERS
F_ref	Reference Frequency	Max		350		MHz
F_ref	Reference Input Sensitivity		0.2		3.3	V_PP
Zin_ref	Reference Input Impedance	Parallel capacitance		2		pF
Zin_ref	Reference Input Impedance	Parallel resistance		2.2		kΩ
PFD, CP
F_PFD	PFD Frequency	Max, refer to the Typical Application			65	MHz
I_{CP_OUT}	Charge Pump Current	Max		1.94		mA
	In-band Normalized PN Floor	Integer Mode		–221		dBc/Hz
VCO
f_VCO	Typical VCO frequency range⁽²⁾		2050		4100	MHz
K_V	VCO gain	VTUNE = 1.1 V		30		MHz/V
PN	VCO Open Loop Phase Noise; f_VCO = 3600 MHz; TX Div = Div-by-1; f_OUT = 3600 MHz VTUNE = 1.1 V	10 kHz		–74		dBc/Hz
		100 kHz		–109
		1 MHz		–135
		10 MHz		–152
		40 MHz		–156
	VCO Open Loop Phase Noise; f_VCO = 3600 MHz; TX Div = Div-by-2; f_OUT = 1800 MHz; VTUNE = 1.1 V	10 kHz		–80		dBc/Hz
		100 kHz		–115
		1 MHz		–141
		10 MHz		–156
		40 MHz		–158
LO OUTPUT
f_OUT	Typical output frequency range⁽²⁾	Divide by 1	2050		4100	MHz
		Divide by 2	1025		2050
		Divide by 4	512.5		1025
		Divide by 8	256.25		512.5
P_LO	Output power	SE at 1800 MHz, OUTBUF_BIAS = 2		1		dBm
	External VCO input Frequency Range		250		4200	MHz
	External VCO Input Level		–10	0	10	dBm
CLOSE LOOP PLL OR VCO
	Integrated Phase Noise	Frac-N; PFD = 15.36 MHz; f_OUT = 3532.89 MHz; Integration BW =1 kHz to 10 MHz; SSB		-45.2		dB
	Integrated Phase Noise	Int-N; PFD = 2.56 MHz; f_OUT = 1799.68 MHz; Integration BW = 500 Hz to 20 MHz; SSB		-49.8		dB
	VCO Close Loop Phase Noise; f_VCO = 3600 MHz; TX DIV = Div-by-2; f_OUT = 1800 MHz; Integer Mode, PFD = 2.56MHz	10 kHz		–96		dBc/Hz
		100 kHz		–114
		1 MHz		–140
		10 MHz		–156
		40 MHz		–158
DIGITAL INTERFACE
V_IH	High Level Input Voltage		2	3.3		V
V_IL	Low Level Input Voltage		0		0.8	V
V_OH	High Level Output Voltage	Referenced to VCC_DIG	0.8 x VCC			V
V_OL	Low Level Output Voltage	Referenced to VCC_DIG			0.2 x VCC	V

(1) Powered down output buffer and LO divider.

(2) Divided-down ranges minimum and maximum values are typical but are not specified.

6.6 Typical Characteristics

6.6.1 Modulator Output Spectrum

Graphical illustration of the modulator output spectrum with two tones is shown in Figure 1.

Figure 1. Graphical Illustration of Modulator Output Spectrum

6.7 Typical Characteristics - Output Power

Unless specified all plots were created using TRF3722EVM, V_CC = 3.3 V, VCC_TK = 5 V, T_A = 25°C, I/Q frequency (f_BB) 4.5 MHz and 5.5 MHz, 500 mV_PP, V_CM = 0.25 V, and 4.7 pF series capacitor at RFOUT. Optimized bias settings as per Table 16. Total P_out is two tones combined power.

Figure 2. Total P_OUT vs Temperature, Typical Operating Mode

Figure 4. Total P_OUT vs Temperature, High Gain Mode

Figure 6. Total P_OUT vs Temperature, Low Power Mode

Figure 3. Total P_OUT vs Supply, Typical Operating Mode

Figure 5. Total P_OUT vs Supply, High Gain Mode

Figure 7. Total P_OUT vs Supply, Low Power Mode

6.8 Typical Characteristics - Gain

Unless specified all plots were created using TRF3722EVM, VCC = 3.3 V, VCC_TK = 5 V, T_A = 25°C, I/Q frequency (f_BB) 4.5 MHz and 5.5 MHz, V_CM = 0.25 V, and 4.7 pF series capacitor at RFOUT. Optimized bias settings as per Table 16.

Figure 8. Voltage Gain vs Temperature, Typical Operating Mode

Figure 10. Voltage Gain vs Temperature, High Gain Mode

Figure 12. Voltage Gain vs Temperature, Low Power Mode

Figure 9. Voltage Gain vs Supply, Typical Operating Mode

Figure 11. Voltage Gain vs Supply, High Gain Mode

Figure 13. Voltage Gain vs Supply, Low Power Mode

6.9 Typical Characteristics - OIP3

Figure 14. OIP3 vs Temperature, Typical Operating Mode

Figure 16. OIP3 vs Temperature, High Gain Mode

Figure 18. OIP3 vs Temperature, Low Power Mode

Figure 15. OIP3 vs Supply, Typical Operating Mode

Figure 17. OIP3 vs Supply, High Gain Mode

Figure 19. OIP3 vs Supply, Low Power Mode

6.10 Typical Characteristics - OIP2

Figure 20. OIP2 vs Temperature, Typical Operating Mode

Figure 22. OIP2 vs Temperature, High Gain Mode

Figure 24. OIP2 vs Temperature, Low Power Mode

Figure 21. OIP2 vs Supply, Typical Operating Mode

Figure 23. OIP2 vs Supply, High Gain Mode

Figure 25. OIP2 vs Supply, Low Power Mode

6.11 Typical Characteristics - OP1dB

Unless specified all plots were created using TRF3722EVM, VCC = 3.3 V, VCC_TK = 5 V, T_A = 25°C, I/Q frequency (f_BB) 5 MHz, V_CM = 0.25 V, and 4.7 pF series capacitor at RFOUT. Optimized bias settings as per Table 16.

Figure 26. OP1dB vs Temperature, Typical Operating Mode

Figure 28. OP1dB vs Temperature, High Gain Mode

Figure 30. OP1dB vs Temperature, Low Power Mode

Figure 27. OP1dB vs Supply, Typical Operating Mode

Figure 29. OP1dB vs Supply, High Gain Mod

Figure 31. OP1dB vs Supply, Low Power Mode

6.12 Typical Characteristics - Noise

Unless specified all plots were created using TRF3722EVM, VCC = 3.3 V, VCC_TK = 5 V, T_A = 25°C, BB inputs terminated to 50 Ω and 4.7 pF series capacitor at RFOUT. Optimized bias settings as per Table 16.

Figure 32. Noise vs Temperature, Typical Operating Mode

Figure 34. Noise vs Temperature, High Gain Mode

Figure 36. Noise vs Temperature, Low Power Mode

Figure 33. Noise vs Supply, Typical Operating Mode

Figure 35. Noise vs Supply, High Gain Mode

Figure 37. Noise vs Supply, Low Power Mode

6.13 Typical Characteristics - Unadjusted CF

Unless specified all plots were created using TRF3722EVM, VCC = 3.3 V, VCC_TK= 5 V, T_A = 25°C, I/Q frequency (f_BB) 4.5 MHz and 5.5 MHz, V_CM = 0.25 V, and 4.7 pF series capacitor at RFOUT. Optimized bias settings as per Table 16.

Figure 38. Unadjustable CF vs Temperature,
Typical Operating Mode

Figure 40. Unadjustable CF vs Temperature,
High Gain Mode

Figure 42. Unadjustable CF vs Temperature,
Low Power Mode

Figure 39. Unadjustable CF vs Supply,
Typical Operating Mode

Figure 41. Unadjustable CF vs Supply, High Gain Mode

Figure 43. Unadjustable CF vs Supply, Low Power Mode

6.14 Typical Characteristics - Unadjusted SBS

Unless specified all plots were created using TRF3722EVM, VCC = 3.3 V, VCC_TK= 5 V, and T_A = 25°C, I/Q frequency (f_BB) 4.5 MHz and 5.5 MHz, V_CM = 0.25 V, and 4.7 pF series capacitor at RFOUT. Optimized bias settings as per Table 16.

Figure 44. Unadjustable SBS vs Temperature,
Typical Operating Mode

Figure 46. Unadjustable SBS vs
Temperature, High Gain Mode

Figure 48. Unadjustable SBS vs Temperature,
Low Power Mode

Figure 45. Unadjustable SBS vs Supply,
Typical Operating Mode

Figure 47. Unadjustable SBS vs Supply,
High Gain Mode

Figure 49. Unadjustable SBS vs Supply, Low Power Mode

6.15 Typical Characteristics - LO Harmonic

Unless specified all plots were created using TRF3722EVM, VCC = 3.3 V, VCC_TK = 5 V, and T_A = 25°C, I/Q frequency (f_BB) 4.5 MHz and 5.5 MHz, V_CM = 0.25 V, and 4.7 pF series capacitor at RFOUT. Optimized bias settings as per Table 16.

Figure 50. LO Second Harmonic vs Temperature,
Typical Operating Mode

Figure 52. LO Second Harmonic vs Temperature,
High Gain Mode

Figure 54. LO Second Harmonic vs Temperature,
Low Power Mode

Figure 56. LO Third Harmonic vs Temperature,
Typical Operating Mode

Figure 58. LO Third Harmonic vs Temperature,
High Gain Mode

Figure 60. LO Third Harmonic vs Temperature,
Low Power Mode

Figure 51. LO Second Harmonic vs Supply,
Typical Operating Mode

Figure 53. LO Second Harmonic vs Supply,
High Gain Mode

Figure 55. LO Second Harmonic vs Supply,
Low Power Mode

Figure 57. LO Third Harmonic vs Supply,
Typical Operating Mode

Figure 59. LO Third Harmonic vs Supply,
High Gain Mode

Figure 61. LO Third Harmonic vs Supply,
Low Power Mode

6.16 Typical Characteristics - BB Harmonic

Figure 62. BB-HD2 vs Temperature, Typical Operating Mode

Figure 64. BB-HD2 vs Temperature, High Gain Mode

Figure 66. BB-HD2 vs Temperature, Low Power Mode

Figure 68. BB-HD3 vs Temperature, Typical Operating Mode

Figure 70. BB-HD3 vs Temperature, High Gain Mode

Figure 72. BB-HD3 vs Temperature, Low Power Mode

Figure 63. BB-HD2 vs Supply, Typical Operating Mode

Figure 65. BB-HD2 vs Supply, High Gain Mode

Figure 67. BB-HD2 vs Supply, Low Power Mode

Figure 69. BB-HD3 vs Supply, Typical Operating Mode

Figure 71. BB-HD3 vs Supply, High Gain Mode

Figure 73. BB-HD3 vs Supply, Low Power Mode

6.17 Typical Characteristics - RF Output Return Loss

Unless specified all plots were created at RFOUT pin using TRF3722EVM, VCC = 3.3 V, VCC_TK = 5 V, and T_A = 25°C

Figure 74. Smith Chart

Figure 75. RF_OUT S22 vs Frequency

6.18 Typical Characteristics - PLL/VCO

Unless specified all plots were created using TRF3722EVM, VCC = 3.3 V, VCC_TK = 5 V, and T_A = 25°C. Measured at LO_OUTP with 50 Ω bias resistor and 47 pF series capacitor. Modulator section powered down. Reference frequency is set to 61.44 MHz. Optimized bias settings as per Table 16.

Figure 76. Open Loop Phase Noise at 450 MHz vs Temperature

Figure 78. Open Loop Phase Noise at 900 MHz vs Temperature

Figure 80. Open Loop Phase Noise at 1800 MHz vs Temperature

Figure 82. Open Loop Phase Noise vs Frequency

Figure 84. 450 MHz Frac-N (Closed Loop Phase Noise) vs Supply

Figure 86. 1800 MHz Frac-N (Closed Loop Phase Noise) vs Supply

Figure 88. 2150 MHz Frac-N (Closed Loop Phase Noise) vs Supply

Figure 90. 2700 MHz Frac-N (Closed Loop Phase Noise) vs Supply

Figure 92. 3600 MHz Frac-N (Closed Loop Phase Noise) vs Supply

Figure 94. PFD Spur vs Temperature

Figure 96. PFD Spur vs PFD Multiples

Figure 98. 1 x Reference Spur vs Temperature

Figure 100. Reference Spur vs Reference Multiples

Figure 102. 3609.6 MHz Integer Boundary Spur vs Supply

Figure 104. 1842.2 MHz Integer Boundary Spur vs Supply

V_(tune) = 1.1 V

Figure 106. Frequency vs VCO_TRIM

Figure 108. LO Output Power at LO_OUTP vs Supply

Figure 77. Open Loop Phase Noise at 450 MHz vs Supply

Figure 79. Open Loop Phase Noise at 900 MHz vs Supply

Figure 81. Open Loop Phase Noise at 1800 MHz vs Supply

Figure 83. 450 MHz Frac-N (Closed Loop Phase Noise) vs Temperature

Figure 85. 1800 MHz Frac-N (Closed Loop Phase Noise) vs Temperature

Figure 87. 2150 MHz Frac-N (Closed Loop Phase Noise) vs Temperature

Figure 89. 2700 MHz Frac-N (Closed Loop Phase Noise) vs Temperature

Figure 91. 3600 MHz Frac-N (Closed Loop Phase Noise) vs Temperature

Figure 93. 450, 900, 1800, 3600 MHz Closed Loop Phase Noise vs Offset Frequency

Figure 95. PFD Spur vs Supply

Figure 97. PFD Spur vs Frequency

Figure 99. Reference Spur vs Supply

Figure 101. 3609.6 MHz Integer Boundary Spur vs Temperature

Figure 103. 1843.2 MHz Integer Boundary Spur vs Temperature

V_(tune) = 1.1 V

Figure 105. K_VCO vs VCO Trim

Figure 107. LO Output Power at LO_OUTP vs Temperature

Figure 109. LO Harmonics at LO_OUTP vs Frequency

6.19 Typical Characteristics - Current Consumption

Unless specified all plots were created using TRF3722EVM, VCC = 3.3 V, VCC_TK = 5 V, and T_A = 25°C. Optimized bias settings as per Table 16

Figure 110. 3.3V Supply Current vs Temperature, Typical Operating Mode

Figure 112. 3.3V Supply Current vs Temperature, High Gain Mode

Figure 114. 3.3V Supply Current vs Temperature, Low Power Mode

Figure 116. 5V Supply Current vs Temperature, Typical Operating Mode

Figure 111. 3.3V Supply Current vs Supply, Typical Operating Mode

Figure 113. 3.3V Supply Current vs Supply, High Gain Mode

Figure 115. 5V Supply Current vs Supply, Low Power Mode

Figure 117. 5V Supply Current vs Temperature, Typical Operating Mode

6.20 Typical Characteristics - Power Dissipation

Unless specified all plots were created using TRF3722EVM, VCC = 3.3 V, VCC_TK = 5 V, and T_A = 25°C. Optimized bias settings as per Table 16.

Figure 118. 3.3 V P_DISS vs Temperature,
Typical Operating Mode

Figure 120. 3.3 V P_DISS vs Temperature,
High Gain Mode

Figure 122. 3.3 V P_DISS vs Temperature, Low Power Mode

Figure 124. Total P_DISS vs Temperature,
Typical Operating Mode

Figure 126. Total P_DISS vs Temperature, High Gain Mode

Figure 128. Total P_DISS vs Temperature, Low Power Mode

Figure 119. 3.3 V P_DISS vs Supply,
Typical Operating Mode

Figure 121. 3.3 V P_DISS vs Supply,
High Gain Mode

Figure 123. 3.3 V P_DISS vs Supply, Low Power Mode

Figure 125. Total P_DISS vs Supply, Typical Operating Mode

Figure 127. Total P_DISS vs Supply, High Gain Mode

Figure 129. Total P_DISS vs Supply, Low Power Mode