SLVS763E June 2007 – July 2015 TPS62260 , TPS62261 , TPS62262 , TPS62263
PRODUCTION DATA.
- 1 Features
- 2 Applications
- 3 Description
- 4 Revision History
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Specifications
- 8 Detailed Description
- 9 Application and Implementation
- 10Power Supply Recommendations
- 11Layout
- 12Device and Documentation Support
- 13Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- DRV|6
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
- DRV|6
訂購(gòu)信息
7 Specifications
7.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)(1)| MAX | MIN | UNIT | |||
|---|---|---|---|---|---|
| VIN | Input voltage (2) | –0.3 | 7 | V | |
| Voltage at EN, MODE | –0.3 | VIN +0.3 ≤ 7 | |||
| Voltage on SW | –0.3 | 7 | |||
| Peak output current | Internally limited | A | |||
| TJ | Maximum operating junction temperature | –40 | 125 | °C | |
| Tstg | Storage temperature | –65 | 150 | °C | |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
7.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | ±2000 | V |
| Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | ±1000 | |||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| VIN | Supply voltage | 2 | 6 | V | |
| Output voltage range for adjustable voltage | 0.6 | VIN | V | ||
| TA | Operating ambient temperature | –40 | 85 | °C | |
| TJ | Operating junction temperature | –40 | 125 | °C | |
7.4 Thermal Information
| THERMAL METRIC(1) | TPS62260, TPS62261, TPS62262, TPS62263 | TPS62260, TPS62262 | UNIT | |
|---|---|---|---|---|
| DRV [WSON] | DDC [SOT] | |||
| 6 PINS | 5 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 67.8 | 226.9 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 88.5 | 40.7 | °C/W |
| RθJB | Junction-to-board thermal resistance | 37.2 | 48.8 | °C/W |
| ψJT | Junction-to-top characterization parameter | 2.0 | 0.5 | °C/W |
| ψJB | Junction-to-board characterization parameter | 37.6 | 48.1 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | 7.9 | n/a | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.
7.5 Electrical Characteristics
Over full operating ambient temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply for condition VIN = EN = 3.6 V. External components CIN = 4.7 μF 0603, COUT = 10 μF 0603, L = 2.2 μH, see the parameter measurement information.| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY | ||||||
| VIN | Input voltage range | 2.3 | 6 | V | ||
| IOUT | Output current | VIN 2.5 V to 6 V | 600 | mA | ||
| VIN 2.3 V to 2.5 V | 300 | |||||
| VIN 2 V to 2.3 V | 150 | |||||
| IQ | Operating quiescent current | IOUT = 0 mA, PFM mode enabled (MODE = GND) device not switching |
15 | μA | ||
| IOUT = 0 mA, PFM mode enabled (MODE = GND) device switching, VOUT = 1.8 V, see (1) |
18.5 | |||||
| IOUT = 0 mA, switching with no load (MODE = VIN), PWM operation, VOUT = 1.8 V, VIN = 3 V |
3.8 | mA | ||||
| ISD | Shutdown current | EN = GND | 0.1 | 1 | μA | |
| UVLO | Undervoltage lockout threshold | Falling | 1.85 | V | ||
| Rising | 1.95 | |||||
| ENABLE, MODE | ||||||
| VIH | High level input voltage, EN, MODE | 2 V ≤ VIN ≤ 6 V | 1 | VIN | V | |
| VIL | Low level input voltage, EN, MODE | 2 V ≤ VIN ≤ 6 V | 0 | 0.4 | V | |
| IIN | Input bias current, EN, MODE | EN, MODE = GND or VIN | 0.01 | 1 | μA | |
| POWER SWITCH | ||||||
| RDS(on) | High side MOSFET on-resistance | VIN = VGS = 3.6 V, TA = 25°C | 240 | 480 | mΩ | |
| Low side MOSFET on-resistance | 185 | 380 | ||||
| ILIMF | Forward current limit MOSFET high side and low side | VIN = VGS = 3.6 V | 0.8 | 1 | 1.2 | A |
| TSD | Thermal shutdown | Increasing junction temperature | 140 | °C | ||
| Thermal shutdown hysteresis | Decreasing junction temperature | 20 | ||||
| OSCILLATOR | ||||||
| fSW | Oscillator frequency | 2 V ≤ VIN ≤ 6 V | 2 | 2.25 | 2.5 | MHz |
| OUTPUT | ||||||
| VOUT | Adjustable output voltage range | 0.6 | VIN | V | ||
| VREF | Reference voltage | 600 | mV | |||
| VFB | Feedback voltage PWM mode | MODE = VIN, PWM operation, for fixed output voltage versions VFB = VOUT, 2.5 V ≤ VIN ≤ 6 V, 0 mA ≤ IOUT ≤ 600 mA (3) |
–1.5% | 0% | 1.5% | |
| Feedback voltage PFM mode | MODE = GND, device in PFM mode, voltage positioning active(1) | 1% | ||||
| Load regulation | PWM mode | –0.5 | %/A | |||
| tStart Up | Start-up time | Time from active EN to reach 95% of VOUT nominal | 500 | μs | ||
| tRamp | VOUT ramp-up time | Time to ramp from 5% to 95% of VOUT | 250 | μs | ||
| Ilkg | Leakage current into SW pin | VIN = 3.6 V, VIN = VOUT = VSW, EN = GND (2) | 0.1 | 1 | μA | |
(1) In PFM mode, the internal reference voltage is set to typ. 1.01 × VREF. See the parameter measurement information.
(2) In fixed output voltage versions, the internal resistor divider network is disconnected from FB pin.
(3) For VIN = VOUT+ 0.6 V.
7.6 Typical Characteristics
Figure 1. Shutdown Current Into VIN vs Input Voltage
Figure 3. Static Drain-Source On-State Resistance vs Input Voltage
Figure 2. Quiescent Current vs Input Voltage
Figure 4. Static Drain-Source On-State Resistance vs Input Voltage