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SLVS314F SEPTEMBER 2000 – August 2015 TPS61010 , TPS61012 , TPS61013 , TPS61014 , TPS61015 , TPS61016

PRODUCTION DATA.

封裝選項

請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。

機械數(shù)據(jù) (封裝 | 引腳)

DGS|10

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

訂購信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
Input voltage	VBAT, VOUT, EN, LBI, FB, ADEN	–0.3	3.6	V
Input voltage	SW	–0.3	7	V
Voltage	LBO, COMP	–0.3	3.6	V
Operating free-air temperature range, T_A		–40	85	°C
Maximum junction temperature, T_J			150	°C
Storage temperature range, T_stg		–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

			VALUEMAX	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾	±1000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

		MIN	NOM	MAX	UNIT
V_I	Supply voltage at VBAT	0.8		VOUT	V
I_O	Maximum output current at VIN = 1.2 V	100			mA
I_O	Maximum output current at VIN = 2.4 V	200			mA
L1	Inductor	10	33		µH
C_I	Input capacitor		10		µF
C_o	Output capacitor	10	22	47	µF
T_J	Operating virtual junction temperature	–40		125	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS6101x	TPS61010	UNIT
		DGS	DRC
		10 PINS
R_θJA	Junction-to-ambient thermal resistance	161.8	43.1	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	36.3	67.4
R_θJB	Junction-to-board thermal resistance	82.7	18.1
ψ_JT	Junction-to-top characterization parameter	1.3	1.6
ψ_JB	Junction-to-board characterization parameter	81.1	18.2
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	N/A	5.2

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

over recommended operating free-air temperature range, VBAT = 1.2 V, EN = VBAT (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
V_I	Minimum input voltage for start-up	R_L = 33 Ω			0.85	0.9	V
	Minimum input voltage for start-up	R_L = 3 kΩ, T_A = 25 °C		0.8
	Input voltage once started	I_O = 100 mA		0.8
V_O	Programmable output voltage range	TPS61010, I_OUT = 100 mA		1.5		3.3	V
	Output voltage	TPS61011, 0.8 V < V_I < V_O, I_O = 0 to 100 mA		1.45	1.5	1.55	V
		TPS61012, 0.8 V < V_I < V_O, I_O = 0 to 100 mA		1.74	1.8	1.86	V
		TPS61013, 0.8 V < V_I < V_O, I_O = 0 to 100 mA		2.42	2.5	2.58	V
		TPS61013, 1.6 V < V_I < V_O, I_O = 0 to 200 mA		2.42	2.5	2.58	V
		TPS61014, 0.8 V < V_I < V_O, I_O = 0 to 100 mA		2.72	2.8	2.88	V
		TPS61014, 1.6 V < V_I < V_O, I_O = 0 to 200 mA		2.72	2.8	2.88	V
		TPS61015, 0.8 V < V_I < V_O, I_O = 0 to 100 mA		2.9	3.0	3.1	V
		TPS61015, 1.6 V < V_I < V_O, I_O = 0 to 200 mA		2.9	3.0	3.1	V
		TPS61016, 0.8 V < V_I < V_O, I_O = 0 to 100 mA		3.2	3.3	3.4	V
		TPS61016, 1.6 V < V_I < V_O, I_O = 0 to 200 mA		3.2	3.3	3.4	V
I_O	Maximum continuous output current	V_I > 0.8 V		100			mA
I_O	Maximum continuous output current	V_I > 1.8 V		250			mA
I_(SW)	Switch current limit	TPS61011, once started		0.39	0.48		A
		TPS61012, once started		0.54	0.56
		TPS61013, once started		0.85	0.93
		TPS61014, once started		0.95	1.01
		TPS61015, once started		1	1.06
		TPS61016, once started		1.07	1.13
V_(FB)	Feedback voltage			480	500	520	mV
f	Oscillator frequency			420	500	780	kHz
D	Maximum duty cycle				85%
r_DS(on)	NMOS switch on-resistance	V_O = 1.5 V			0.37	0.51	Ω
r_DS(on)	PMOS switch on-resistance	V_O = 1.5 V			0.45	0.54	Ω
r_DS(on)	NMOS switch on-resistance	V_O = 3.3 V			0.2	0.37	Ω
r_DS(on)	PMOS switch on-resistance	V_O = 3.3 V			0.3	0.45	Ω
	Line regulation ⁽¹⁾	V_I = 1.2 V to 1.4 V, I_O = 100 mA			0.3		%/V
	Load regulation ⁽¹⁾	V_I = 1.2 V; I_O = 50 mA to 100 mA			0.1		%/V
	Autodischarge switch resistance				300	400	Ω
	Residual output voltage after autodischarge	ADEN = VBAT; EN = GND				0.4	V
V_IL	LBI voltage threshold ⁽²⁾	V_(LBI) voltage decreasing		480	500	520	mV
	LBI input hysteresis				10		mv
	LBI input current				0.01	0.03
V_OL	LBO output low voltage	V_(LBI) = 0 V, V_O = 3.3 V, I_(OL) = 10 µA			0.04	0.2	V
	LBO output leakage current	V_(LBI) = 650 mV, V_(LBO) = V_O				0.03	µA
I_(FB)	FB input bias current (TPS61010 only)	V_(FB) = 500 mV			0.01	0.03
V_IL	EN and ADEN input low voltage	0.8 V < V_BAT < 3.3 V				0.2 × VBAT	V
V_IH	EN and ADEN input high voltage	0.8 V < V_BAT < 3.3 V		0.8 ×VBAT			V
	EN and ADEN input current	EN and ADEN = GND or VBAT			0.01	0.03	µA
I_q	Quiescent current into pins VBAT/SW and VOUT	I_L = 0 mA, V_EN = V_I	VBAT/SW		31	46	µA
I_q	Quiescent current into pins VBAT/SW and VOUT	I_L = 0 mA, V_EN = V_I	V_O		5	8	µA
I_off	Shutdown current from power source	V_EN = 0 V, ADEN = VBAT, T_A= 25°C			1	3	µA

(1) Line and load regulation is measured as a percentage deviation from the nominal value (i.e., as percentage deviation from the nominal output voltage). For line regulation, x %/V stands for ±x% change of the nominal output voltage per 1-V change on the input/supply voltage. For load regulation, y% stands for ±y% change of the nominal output voltage per the specified current change.

(2) For proper operation the voltage at LBI may not exceed the voltage at V_BAT.

7.6 Typical Characteristics

7.6.1 Table of Graphs

		FIGURE
Maximum output current	vs Input voltage for V_O = 2.5 V, 3.3 V	Figure 1
Maximum output current	vs Input voltage for V_O = 1.5 V, 1.8 V	Figure 2
Efficiency	vs Output current for V_I = 1.2 VV_O = 1.5 V, L1 = Sumida CDR74 - 10 µH	Figure 3
	vs Output current for V_I = 1.2 VV_O = 2.5 V, L1 = Sumida CDR74 - 10 µH	Figure 4
	vs Output current for VIN = 1.2 VV_O = 3.3 V, L1 = Sumida CDR74 - 10 µH	Figure 5
	vs Output current for V_I = 2.4 VV_O = 3.3 V, L1 = Sumida CDR74 - 10 µH	Figure 6
	vs Input voltage for I_O = 10 mA, I_O = 100 mA, I_O = 200 mAV_O = 3.3 V, L1 = Sumida CDR74 - 10 µH	Figure 7
	TPS61016, VBAT = 1.2 V, I_O = 100 mA	Figure 8
	Sumida CDRH6D38 - 10 µH
	Sumida CDRH5D18 - 10 µH
	Sumida CDRH74 - 10 µH
	Sumida CDRH74B - 10 µH
	Coilcraft DS 1608C - 10 µH
	Coilcraft DO 1608C - 10 µH
	Coilcraft DO 3308P - 10 µH
	Coilcraft DS 3316 - 10 µH
	Coiltronics UP1B - 10 µH
	Coiltronics UP2B - 10 µH
	Murata LQS66C - 10 µH
	Murata LQN6C - 10 µH
	TDK SLF 7045 - 10 µH
	TDK SLF 7032 - 10 µH
Output voltage	vs Output current TPS61011	Figure 9
	vs Output current TPS61013	Figure 10
	vs Output current TPS61016	Figure 11
Minimum supply start-up voltage	vs Load resistance	Figure 12
No-load supply current	vs Input voltage	Figure 13
Shutdown supply current	vs Input voltage	Figure 14
Switch current limit	vs Output voltage	Figure 15