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ZHCSG09 January 2017 TPS568215OA

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

RNN|18
- MPQF456D

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購(gòu)信息

zhcsg09_oa

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) ⁽¹⁾

		MIN	MAX	UNIT
Input Voltage	VIN	–0.3	20	V
	SW	–2	19
	SW(10 ns transient)	–3	20
	EN	–0.3	6.5
	BOOT –SW	–0.3	6.5
	BOOT	–0.3	25.5
	SS, MODE, FB	–0.3	6.5
	VREG5	–0.3	6
Output Voltage	PGOOD	–0.3	6.5	V
Output Current, I_OUT⁽²⁾			10	A
Operating junction temperature, T_J		–40	150	°C
Storage temperature, T_stg		–55	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) In order to be consistent with the TI reliability requirement of 100k continuos Power-On-Hours with 105°C junction temperature at the max output current of 10A, the converter's duty cycle should be limited to 60% operation as to prevent electromigration failure in the solder. If higher duty cycle is required at 10A load the total power on hours or the junction temperature have to be reduced.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

			MIN	MAX	UNIT
	Input Voltage	V_IN	4.5	17	V
		SW	–1.8	17
		BOOT	–0.1	23.5
		VREG5	–0.1	5.2
T_J	Operating junction temperature		-40	150	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS568215OA	UNIT
		RNN (VQFN)
		18 PINS
R_θJA	Junction-to-ambient thermal resistance	42.3	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	23.9	°C/W
R_θJB	Junction-to-board thermal resistance	10.0	°C/W
ψ_JT	Junction-to-top characterization parameter	0.5	°C/W
ψ_JB	Junction-to-board characterization parameter	10.0	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	0.5	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

T_J = –40°C to 150°C, VIN=12V (unless otherwise noted)

PARAMETER		CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY CURRENT
I_IN	V_IN supply current	T_J = 25°C, V_EN=5 V, non switching		850		µA
I_VINSDN	V_IN shutdown current	T_J = 25°C, V_EN=0 V		7		µA
LOGIC THRESHOLD
V_ENH	EN H-level threshold voltage		1.175	1.225	1.3	V
V_ENL	EN L-level threshold voltage		1.025	1.104	1.15	V
V_ENHYS				0.121		V
I_ENp1	EN pull-up current	V_EN = 1.0 V	0.35	1.91	2.95	µA
I_ENp2	EN pull-up current	V_EN = 1.3 V	3	4.197	5.5	µA
FEEDBACK VOLTAGE
V_FB	FB voltage	T_J= 25°C	598	600	602	mV
		T_J = 0°C to 85°C	597.5	600	602.5	mV
		T_J = –40°C to 85°C	594	600	602.5	mV
		T_J = –40°C to 150°C	594	600	606	mV
LDO VOLTAGE
VREG5	LDO Output voltage	T_J = –40°C to 150°C	4.58	4.7	4.83	V
ILIM5	LDO Output Current limit	T_J = –40°C to 150°C	100	150	200	mA
MOSFET
R_DS(on)H	High side switch resistance	T_J = 25°C, V_VREG5= 4.7 V		19		mΩ
R_DS(on)L	Low side switch resistance	T_J = 25°C, V_VREG5 = 4.7 V		9.4		mΩ
SOFT START
I_ss	Soft start charge current	T_J= -40°C to 150°C	4.9	6	7.1	µA
CURRENT LIMIT
I_OCL	Current Limit (Low side sourcing)	ILIM-1 option, Valley Current	6	7.1	8.15	A
		ILIM option, Valley Current	8	9.4	10.8	A
		ILIM+1 option, Valley Current	10	11.8	13.5	A
	Current Limit (Low side negative)	Valley Current		3		A
POWER GOOD
V_PGOODTH	PGOOD threshold	V_FB falling (fault)		84%		%V_REF
		V_FB rising (good)		93%		%V_REF
		V_FB rising (fault)		116%		%V_REF
		V_FB falling (good)		107%		%V_REF
OUTPUT UNDERVOLTAGE PROTECTION
V_UVP	Output UVP threshold	Hiccup detect		68% x V_FB
THERMAL SHUTDOWN
T_SDN	Thermal shutdown threshold	Shutdown temperature		160		°C
T_SDN	Thermal shutdown threshold	Hysteresis		15		°C
T_{SDN VREG5}	VREG5 thermal shutdown threshold	Shutdown temperature		171		°C
T_{SDN VREG5}	VREG5 thermal shutdown threshold	Hysteresis		18		°C
UVLO
UVLO	UVLO threshold	VREG5 rising voltage	4.1	4.3	4.5	V
		VREG5 falling voltage	3.34	3.57	3.8	V
		VREG5 hysteresis		730		mV

6.6 Timing Requirements

PARAMETER		CONDITIONS	MIN	TYP	MAX	UNIT
ON-TIME TIMER CONTROL
t_ON	SW On Time	V_IN = 12 V, V_OUT=3.3 V, F_SW = 800 kHz	310	340	380	ns
t_{ON min}	SW Minimum on time	V_IN = 17 V, V_OUT=0.6 V, F_SW= 1200 kHz		54		ns
t_OFF	SW Minimum off time	25°C, V_FB=0.5 V			310	ns
F_SWOOA	OOA Switching Frequency	T_J = -40°C to 150°C, No Load	20		27	KHz
SOFT START
t_SS	Soft start time	Internal soft start time		1.045		ms
OUTPUT UNDERVOLTAGE AND OVERVOLTAGE PROTECTION
t_UVPDEL	Output Hiccup delay relative to SS time	UVP detect		1		cycle
t_UVPEN	Output Hiccup enable delay relative to SS time	UVP detect		7		cycle