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ZHCSIH1A July 2018 – September 2019 TPS56637

PRODUCTION DATA.

封裝選項

機械數(shù)據(jù) (封裝 | 引腳)

RPA|10
- MPQF515

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

訂購信息

zhcsih1a_oa

6.5 Electrical Characteristics

The electrical ratings specified in this section apply to all specifications in this document unless otherwise noted. These specifications are interpreted as conditions that will not degrade the parametric or functional specifications of the device for the life of the product containing it. Typical values correspond to T_J = 25°C, V_IN = 12 V. Minimum and maximum limits are based on T_J = –40°C to +150°C, V_IN = 4.5 V to 28 V(unless otherwise noted).

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY CURRENT
I_Q	Quiescent current, Operating at ULQ mode⁽¹⁾			140		µA
I_SD	Shutdown supply current	T_J=25°C, V_EN=0 V		2		µA
UVLO
UVLO	V_IN Under-Voltage Lockout	Wake up V_INvoltage	4.0	4.2	4.4	V
		Shut down V_IN voltage	3.6	3.7	3.8	V
		Hysteresis V_IN voltage		500		mV
ENABLE(EN PIN)
I_{EN_INPUT}	Input current	V_EN = 1.1V		1		µA
I_{EN_HYS}	Hysteresis current	V_EN = 1.3V		4		µA
V_EN(ON)	Enable threshold	EN rising		1.18	1.26	V
V_EN(OFF)	Enable threshold	EN failling	1.04	1.12		V
FEEDBACK VOLTAGE
V_FB	Feedback voltage	V_OUT = 5V, continuous mode operation, T_J=25°C	0.594	0.6	0.606	V
V_FB	Feedback voltage	V_OUT = 5V, continuous mode operation, T_J=-40°C to 150°C	0.591	0.6	0.609	V
MOSFET
R_DS(on)h	High side switch resistance	T_J = 25°C, V_BST - V_SW = 5 V		26		mΩ
R_DS(on)l	Low side switch resistance	T_J = 25°C		12		mΩ
CURRENT LIMIT
I_OCL	Valley current limit		6.3	7.5	8.6	A
I_{OC_REV}	Reverse current limit for FCCM Mode		2.3	3	3.7	A
POWER GOOD
V_PGTH	PG lower threshold - falling	% of V_FB		85%
	PG lower threshold - rising	% of V_FB		90%
	PG upper threshold - falling	% of V_FB		110%
	PG upper threshold - rising	% of V_FB		115%
I_PGSINK	PG sink current	V_FB = 0.5V, V_PG= 0.5V		1.5		mA
I_PGLK	PG leakage current	V_PG = 5.5V	-1		1	µA
FREQUENCY
F_SW	Switching frequency	V_OUT =5V, continuous mode operation		500		kHz
OUTPUT UNDERVOLTAGE AND OVERVOLTAGE PROTECTION
V_OVP	Output OVP threshold	OVP detect(L>H)		125%
V_OVP	Output OVP threshold	Hysteresis		5%
V_UVP	Output UVP threshold	Hiccup detect(H>L)		65%
V_UVP	Output UVP threshold	Hysteresis		5%
THERMAL SHUTDOWN
T_SDN	Thermal shutdown threshold⁽²⁾	Temperature Rising		165		°C
T_SDN	Thermal shutdown threshold⁽²⁾	Hysteresis		30		°C
SW DISCHARGE RESISTANCE
R_DISCHG	V_OUT discharge resistance	V_EN=0, V_SW=0.5V, T_J=25°C		200		Ω

(1) Not representative of the total input current of the system when in regulation. Ensured by design and characterization test.

(2) Not production tested. Ensured by design and engineering sample correlation.