ZHCSJ24A November 2018 – May 2019 TPS56339
PRODUCTION DATA.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| POWER SUPPLY (VIN PIN) | ||||||
| VIN | Operation input voltage | 4.5 | 24 | V | ||
| IQ | Non switching quiescent current | First power on with no load, then force VFB to 1.2 V, VIN = 12 V | 98 | µA | ||
| ISHDN | Shutdown supply current | VIN = 12 V, VEN = 0 V | 3 | µA | ||
| VIN_UVLO | Undervoltage lockout thresholds | VIN Rising threshold | 3.9 | 4.2 | 4.4 | V |
| VIN_UVLO | VIN Falling threshold | 3.5 | 3.7 | 3.9 | V | |
| ENABLE (EN PIN) | ||||||
| VEN_RISE | Enable threshold | EN rising threshold | 1.18 | 1.28 | V | |
| VEN_FALL | EN falling threshold | 1.08 | 1.12 | V | ||
| IEN_INPUT | Input current | VEN = 1.0 V | 1.2 | µA | ||
| IEN_HYS | Hysteresis current | VEN = 1.5 V | 3.1 | µA | ||
| VOLTAGE REFERENCE (FB PIN) | ||||||
| VREF | Reference voltage | TJ = 25 °C | 0.790 | 0.802 | 0.814 | V |
| TJ = -40 °C to 125 °C | 0.782 | 0.802 | 0.822 | V | ||
| INTEGRATED MOSFETS | ||||||
| RDS_ON_HS | High-side MOSFET On-resistance | TJ = 25 °C, VBOOT-SW = 5 V | 70 | mΩ | ||
| RDS_ON_LS | Low-side MOSFET On-resistance | TJ = 25 °C, VIN = 12 V | 35 | mΩ | ||
| CURRENT LIMIT | ||||||
| IHS_LIMIT | High-side MOSFET current limit | 3.9 | 4.7 | 5.4 | A | |
| ILS_LIMIT | Low-side MOSFET current limit | VIN = 12 V | 2.7 | 3.6 | 4.7 | A |
| OUTPUT UNDERVOLTAGE PROTECTION | ||||||
| VUVP_HYS | Output UVP threshold | Hiccup detect (H→L) | 62.5 | % | ||
| Hysteresis | 5 | % | ||||
| BOOT UVLO | ||||||
| VBOOT-SW | BOOT UVLO threshold | 2.2 | V | |||
| OSCILLATOR | ||||||
| fSW | Switching frequency | 420 | 500 | 600 | KHz | |
| THERMAL SHUTDOWN | ||||||
| TSHDN(1) | Thermal shutdown threshold | 160 | °C | |||
| THYS(1) | Hysteresis | 20 | °C | |||