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ZHCSEL6D November 2014 – February 2016 TPS54335-1A , TPS54335A , TPS54336A

PRODUCTION DATA.

封裝選項(xiàng)

請(qǐng)參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。

機(jī)械數(shù)據(jù) (封裝 | 引腳)

DRC|10

散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)

DRC|10
- QFND558A

訂購(gòu)信息

6 Specifications

6.1 Absolute Maximum Ratings⁽¹⁾

		MIN	MAX	UNIT
Input voltage	VIN	–0.3	30	V
	EN	–0.3	6
	BOOT	–0.3	(V_PH + 7.5)
	VSENSE	–0.3	3
	COMP	–0.3	3
	RT	–0.3	3
	SS	–0.3	3
Output voltage	BOOT-PH	0	7.5	V
	PH	–1	30
	PH, 10-ns transient	–3.5	30
V_DIFF(GND to exposed thermal pad)		–0.2	0.2	V
Source current	EN	100	100	µA
	RT	100	100	µA
	PH		Current-limit	A
Sink current	PH		Current-limit	A
Sink current	COMP	200	200	µA
Operating junction temperature		–40	150	°C
Storage temperature, T_stg		–65	150	°C

(1) Stresses beyond those listed under the absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under the recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS–001, all pins⁽¹⁾	2000	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾	500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V_SS	Supply input voltage	4.5	28	V
V_OUT	Output voltage	0.8	24	V
I_OUT	Output current	0	3	A
T_J	Operating junction temperature⁽¹⁾	–40	150	°C

(1) The device must operate within 150°C to ensure continuous function and operation of the device.

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS5433xA	TPS5433xA and TPS54335-1A	UNIT
		DDA (SO PowerPAD)	DRC (VSON)
		8 PINS	10 PINS
R_θJA	Junction-to-ambient thermal resistance	42.1	43.9	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	50.9	55.4	°C/W
R_θJB	Junction-to-board thermal resistance	31.8	18.9	°C/W
ψ_JT	Junction-to-top characterization parameter	8	0.7	°C/W
ψ_JB	Junction-to-board characterization parameter	13.5	19.1	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	7.1	5.3	°C/W

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

The electrical ratings specified in this section apply to all specifications in this document unless otherwise noted. These specifications are interpreted as conditions that will not degrade the parametric or functional specifications of the device for the life of the product containing it. T_J = –40°C to 150°C, V_IN = 4.5 to 28 V, (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY VOLTAGE AND UVLO (VIN PIN)
	Operating input voltage		4.5		28	V
	Input UVLO threshold	Rising V_IN		4	4.5	V
	Input UVLO hysteresis			180	400	mV
	VIN-shutdown supply current	V_EN = 0 V		2	10	µA
	VIN-operating non-switching supply current	V_VSENSE = 810 mV		310	800	µA
ENABLE (EN PIN)
	Enable threshold	Rising		1.21	1.28	V
	Enable threshold	Falling	1.1	1.17		V
	Input current	V_EN = 1.1 V		1.15		µA
	Hysteresis current	V_EN = 1.3 V		3.3		µA
VOLTAGE REFERENCE
	Reference	T_J =25°C	0.7936	0.8	0.8064	V
	Reference		0.788	0.8	0.812	V
MOSFET
	High-side switch resistance⁽¹⁾	V_(BOOT-PH) = 3 V		160	280	mΩ
	High-side switch resistance⁽¹⁾	V_(BOOT-PH) = 6 V		128	230	mΩ
	Low-side switch resistance⁽¹⁾	V_IN = 12 V		84	170	mΩ
ERROR AMPLIFIER
	Error-amplifier transconductance (gm)	–2 µA < I_COMP < 2 µA, V_COMP = 1 V		1300		µmhos
	Error-amplifier source and sink	V_COMP = 1 V, 100-mV overdrive		100		µA
	Start switching peak current threshold			0.5		A
	COMP to I_SWITCH gm			8		A/V
CURRENT-LIMIT
	High-side switch current-limit threshold		4	4.9	6.5	A
	Low-side switch sourcing current-limit		3.5	4.7	6.1	A
	Low-side switch sinking current-limit			0		A
THERMAL SHUTDOWN
	Thermal shutdown		160	175		°C
	Thermal shutdown hysteresis			10		°C
BOOT PIN
	BOOT-PH UVLO			2.1	3	V
SOFT START
	Soft-start charge current, TPS54336A			2.3		µA

(1) Measured at pins

6.6 Timing Requirements

		TYP	UNIT
CURRENT-LIMIT
	Hiccup wait time	512	Cycles
	Hiccup time before restart	16384	Cycles
THERMAL SHUTDOWN
	Thermal shutdown hiccup time	32768	Cycles
SOFT START
	Internal soft-start time, TPS54335A and TPS54335-1A	2	ms

6.7 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
PH PIN
	Minimum on time	Measured at 90% to 90% of VIN, I_PH = 2 A		94	145	ns
	Minimum off time	V_(BOOT-PH) ≥ 3 V		0%
SWITCHING FREQUENCY
	Switching frequency range, TPS54335A and TPS54335-1A		50		1500	kHz
		R_(RT) = 100 kΩ	384	480	576	kHz
		R_(RT) = 1000 kΩ, –40°C to 105°C	40	50	60	kHz
		R_(RT) = 30 kΩ	1200	1500	1800	kHz
	Internal switching frequency, TPS54336A		272	340	408	kHz

6.8 Typical Characteristics

TPS54335A TPS54335-1A TPS54336A C001_SLVSC03.png

V_IN = 12 V

Figure 1. High-Side MOSFET on Resistance vs Junction Temperature

TPS54335A TPS54335-1A TPS54336A C003_SLVSC03.png

Figure 3. Voltage Reference vs Junction Temperature

TPS54335A TPS54335-1A TPS54336A C005_SLVSC03.png

V_IN = 12 V

Figure 5. UVLO Threshold vs Junction Temperature

TPS54335A TPS54335-1A TPS54336A C007_SLVSC03.png

V_IN = 12 V

Figure 7. Pullup Current vs Junction Temperature

TPS54335A TPS54335-1A TPS54336A C009_SLVSC03.png

V_EN = 0 V

Figure 9. Shutdown Quiescent Current vs Input Voltage

TPS54335A TPS54335-1A TPS54336A C011_SLVSC03.png

V_IN = 12 V

Figure 11. Minimum Controllable On Time vs Junction Temperature

TPS54335A TPS54335-1A TPS54336A C013_SLVSC03.png

Figure 13. BOOT-PH UVLO Threshold vs Junction Temperature

TPS54335A TPS54335-1A TPS54336A C002_SLVSC03.png

V_IN = 12 V

Figure 2. Low-Side MOSFET on Resistance vs Junction Temperature

TPS54335A TPS54335-1A TPS54336A C004_SLVSC03.png

Figure 4. Oscillator Frequency vs Junction Temperature

TPS54335A TPS54335-1A TPS54336A C006_SLVSC03.png

V_IN = 12 V

Figure 6. Hysteresis Current vs Junction Temperature

TPS54335A TPS54335-1A TPS54336A C008_SLVSC03.png

Figure 8. Non-Switching Operating Quiescent Current vs Input Voltage

TPS54335A TPS54335-1A TPS54336A C010_SLVSC03.png

Figure 10. SS Charge Current vs Junction Temperature

TPS54335A TPS54335-1A TPS54336A C012_SLVSC03.png

V_IN = 12 V

Figure 12. Minimum Controllable Duty Ratio vs Junction Temperature

TPS54335A TPS54335-1A TPS54336A C014_SLVSC03.gif

Figure 14. Current-Limit Threshold vs Input Voltage