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SLVSAG1C December 2010 – December 2015 TPS54327

PRODUCTION DATA.

封裝選項

機械數據 (封裝 | 引腳)

DDA|8
- MPDS092F
DRC|10
- MPDS117L

散熱焊盤機械數據 (封裝 | 引腳)

DDA|8
- PPTD058J
DRC|10
- QFND013N

訂購信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) ⁽¹⁾

		MIN	MAX	UNIT
Input voltage	VIN, EN	–0.3	20	V
	VBST	–0.3	26	V
	VBST (10 ns transient)	–0.3	28	V
	VBST (vs SW)	–0.3	6.5	V
	VFB, SS	–0.3	6.5	V
	SW	–2	20	V
	SW (10 ns transient)	–3	22	V
Output voltage	VREG5	–0.3	6.5	V
Output voltage	GND	–0.3	0.3	V
Voltage from GND to thermal pad, V_diff		–0.2	0.2	V
Operating junction temperature, T_J		–40	150	°C
Storage temperature, T_stg		–55	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

			MIN	MAX	UNIT
V_IN	Supply input voltage		4.5	18	V
V_I	Input voltage	VBST	–0.1	24	V
		VBST (10 ns transient)	–0.1	27
		VBST(vs SW)	–0.1	6
		SS	–0.1	5.7
		EN	–0.1	18
		VFB	–0.1	5.5
		SW	–1.8	18
		SW (10 ns transient)	–3	21
		GND	–0.1	0.1
V_O	Output voltage	VREG5	–0.1	5.7	V
I_O	Output Current	I_VREG5	0	10	mA
T_A	Operating free-air temperature		–40	85	°C
T_J	Operating junction temperature		–40	150	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS54327		UNIT
		DDA (HSOP)	DRC (VSON)
		8 PINS	10 PINS
R_θJA	Junction-to-ambient thermal resistance	42.1	43.9	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	50.9	55.4	°C/W
R_θJB	Junction-to-board thermal resistance	31.8	18.9	°C/W
ψ_JT	Junction-to-top characterization parameter	5	0.7	°C/W
ψ_JB	Junction-to-board characterization parameter	13.5	19.1	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	7.1	5.3	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range V_IN= 12 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY CURRENT
I_VIN	Operating - non-switching supply current	V_IN current, T_A = 25°C, EN = 5 V, V_FB = 0.8 V		800	1200	μA
I_VINSDN	Shutdown supply current	V_IN current, T_A = 25°C, EN = 0 V		1.8	10	μA
LOGIC THRESHOLD
V_ENH	EN high-level input voltage	EN	1.6			V
V_ENL	EN low-level input voltage	EN			0.45	V
V_FB VOLTAGE AND DISCHARGE RESISTANCE
V_FBTH	V_FB threshold voltage	T_A = 25°C, V_O = 1.05 V, continuous mode	749	765	781	mV
I_VFB	V_FB input current	V_FB = 0.8 V, T_A = 25°C		0	±0.1	μA
V_REG5 OUTPUT
V_VREG5	V_REG5 output voltage	T_A = 25°C, 6 V < V_IN < 18 V, 0 < I_VREG5 < 5 mA	5.2	5.5	5.7	V
V_LN5	Line regulation	6 V < V_IN < 18 V, I_VREG5 = 5 mA			25	mV
V_LD5	Load regulation	0 mA < I_VREG5 < 5 mA			100	mV
I_VREG5	Output current	V_IN = 6 V, V_REG5 = 4 V, T_A = 25°C		60		mA
MOSFET
R_DS(on)h	High-side switch resistance	25°C, V_BST - SW = 5.5 V		100		mΩ
R_DS(on)l	Low-side switch resistance	25°C		70		mΩ
CURRENT LIMIT
I_ocl	Current limit	L out = 1.5 μH⁽¹⁾, T_A = -20ºC to 85ºC	3.5	4.2	5.7	A
THERMAL SHUTDOWN
T_SDN	Thermal shutdown threshold	Shutdown temperature ⁽¹⁾		165		°C
T_SDN	Thermal shutdown threshold	Hysteresis ⁽¹⁾		30		°C
ON-TIME TIMER CONTROL
t_ON	ON-time	V_IN = 12 V, V_O = 1.05 V		150		ns
t_OFF(MIN)	Minimum OFF-time	T_A = 25°C, V_FB = 0.7 V		260	310	ns
SOFT START
I_SSC	SS charge current	V_SS = 0 V	1.4	2	2.6	μA
I_SSD	SS discharge current	V_SS = 0.5 V	0.05	0.1		mA
UVLO
UVLO	UVLO threshold	Wakeup V_REG5 voltage	3.45	3.75	4.05	V
UVLO	UVLO threshold	Hysteresis V_REG5 voltage	0.17	0.32	0.45	V

(1) Not production tested.

6.6 Typical Characteristics

VIN = 12 V, T_A = 25°C (unless otherwise noted)

Figure 1. VIN Current vs Junction Temperature

Figure 3. EN Current vs EN Voltage

Figure 5. Switching Frequency vs Input Voltage

Figure 2. VIN Shutdown Current vs Junction Temperature

Figure 4. Efficiency vs Output Current

Figure 6. Switching Frequency vs Output Current