SLVSAU1E May 2011 – August 2016 TPS54228
PRODUCTION DATA.
- 1 Features
- 2 Applications
- 3 Description
- 4 Revision History
- 5 Pin Configuration and Functions
- 6 Specifications
- 7 Detailed Description
- 8 Application and Implementation
- 9 Power Supply Recommendations
- 10Layout
- 11Device and Documentation Support
- 12Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
訂購信息
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Input voltage | VIN, EN | –0.3 | 20 | V |
| VBST | –0.3 | 26 | ||
| VBST (transient, 10 ns) | –0.3 | 28 | ||
| VBST (vs SW) | –0.3 | 6.5 | ||
| VFB, SS | –0.3 | 6.5 | ||
| SW | –2 | 20 | ||
| SW (transient, 10 ns) | –3 | 22 | ||
| Output voltage | VREG5 | –0.3 | 6.5 | V |
| GND | –0.3 | 0.3 | ||
| Voltage from GND to thermal pad, Vdiff | –0.2 | 0.2 | V | |
| Operating junction temperature, TJ | –40 | 150 | °C | |
| Storage temperature, Tstg | –55 | 150 | °C | |
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 | |||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range and VIN = 12 V (unless otherwise noted)| MIN | NOM | MAX | UNIT | |||
|---|---|---|---|---|---|---|
| VIN | Supply input voltage | 4.5 | 18 | V | ||
| VI | Input voltage | VBST | –0.1 | 24 | V | |
| VBST (transient, 10 ns) | –0.1 | 27 | ||||
| VBST(vs SW) | –0.1 | 5.7 | ||||
| SS | –0.1 | 5.7 | ||||
| EN | –0.1 | 18 | ||||
| VFB | –0.1 | 5.5 | ||||
| SW | –1.8 | 18 | ||||
| SW (transient, 10 ns) | –3 | 21 | ||||
| GND | –0.1 | 0.1 | ||||
| VO | Output voltage, VREG5 | –0.1 | 5.7 | V | ||
| IO | Output current, IVREG5 | 0 | 10 | mA | ||
| IOUT | Operating output current(1) | 2 | A | |||
| TA | Operating free-air temperature | –40 | 85 | °C | ||
(1) D package, VOUT > 5 V (see Figure 9 for temperature derating)
6.4 Thermal Information
| THERMAL METRIC(1) | TPS54228 | UNITS | |||
|---|---|---|---|---|---|
| DDA (SO) | D (SOIC) | DRC (VSON) | |||
| 8 PINS | 8 PINS | 10 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 45.3 | 114.4 | 43.9 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 54.8 | 60.8 | 55.4 | °C/W |
| RθJB | Junction-to-board thermal resistance | 16.2 | 55.7 | 18.9 | °C/W |
| ψJT | Junction-to-top characterization parameter | 6.6 | 17.4 | 0.7 | °C/W |
| ψJB | Junction-to-board characterization parameter | 16 | 55.1 | 19.1 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | 8.5 | — | 5.3 | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
6.5 Electrical Characteristics
over operating free-air temperature range and VIN = 12 V (unless otherwise noted)| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY CURRENT | ||||||
| IVIN | Operating, non-switching supply current | VIN current, TA = 25°C, EN = 5 V, VFB = 0.8 V |
800 | 1200 | µA | |
| IVINSDN | Shutdown supply current | VIN current, TA = 25°C, EN = 0 V | 5 | 10 | µA | |
| LOGIC THRESHOLD | ||||||
| VEN | EN high-level input voltage | EN | 1.6 | V | ||
| EN low-level input voltage | EN | 0.6 | V | |||
| REN | EN pin resistance to GND | VEN = 12 V | 220 | 440 | 880 | kΩ |
| VFB VOLTAGE AND DISCHARGE RESISTANCE | ||||||
| VFBTH | VFB threshold voltage | TA = 25°C, VO = 1.05 V, IO = 10 mA, Eco-Mode™ operation |
770 | mV | ||
| TA = 25°C, VO = 1.05 V, continuous mode operation |
749 | 765 | 781 | mV | ||
| IVFB | VFB input current | VFB = 0.8 V, TA = 25°C | 0 | ±0.1 | µA | |
| VREG5 OUTPUT | ||||||
| VVREG5 | VREG5 output voltage | TA = 25°C, 6 V < VIN < 18 V, 0 < IVREG5 < 5 mA |
5.2 | 5.5 | 5.7 | V |
| VLN5 | Line regulation | 6 V < VIN < 18 V, IVREG5 = 5 mA | 25 | mV | ||
| VLD5 | Load regulation | 0 mA < IVREG5 < 5 mA | 100 | mV | ||
| IVREG5 | Output current | VIN = 6 V, VREG5 = 4 V, TA = 25°C | 60 | mA | ||
| MOSFET | ||||||
| RDS(on) | High side switch resistance | DDA and D packages 25°C, VBST – SW = 5.5 V | 155 | mΩ | ||
| DRC package, 25°C, VBST – SW = 5.5 V | 165 | |||||
| Low side switch resistance | 25°C | 108 | ||||
| Iocl | Current limit | DDA and DRC packages, L out = 2.2 µH(1) | 2.5 | 3.3 | 4.7 | A |
| D package, L out = 2.2 µH(1) | 2.3 | 3 | 4.5 | A | ||
| TSDN | Thermal shutdown threshold | Shutdown temperature(1) | 165 | °C | ||
| Hysteresis(1) | 35 | |||||
| tON | On time | VIN = 12 V, VO = 1.05 V | 150 | ns | ||
| tOFF(MIN) | Minimum off time | TA = 25°C, VFB = 0.7 V | 260 | 310 | ns | |
| ISS | Soft-start charge current | VSS = 1 V | 1.4 | 2 | 2.6 | µA |
| Soft-start discharge current | VSS = 0.5 V | 0.1 | 0.2 | mA | ||
| UVLO | Undervoltage lockout threshold | Wake up VREG5 voltage | 3.45 | 3.75 | 4.05 | V |
| Hysteresis VREG5 voltage | 0.13 | 0.32 | 0.48 | |||
(1) Not production tested.
6.6 Typical Characteristics
VIN = 12 V and TA = 25 °C (unless otherwise noted)
Figure 1. VIN Current vs Junction Temperature
Figure 3. EN Current vs EN Voltage
Figure 5. 1.05-V Output Voltage vs Input Voltage
Figure 7. Switching Frequency vs Output Current
Figure 9. D Package Output Currentvs Ambient Temperature
Figure 2. VIN Shutdown Current vs Junction Temperature
Figure 4. 1.05-V Output Voltage vs Output Current
Figure 6. Switching Frequency vs Input Voltage
Figure 8. Vfb Voltage vs Junction Temperature
Figure 10. Power Dissipation vs Ambient Temperature