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ZHCSHA3D NOVEMBER 2009 – March 2018 TPS40303 , TPS40304 , TPS40305

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

DRC|10
- MPDS117L

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

DRC|10
- QFND013N

訂購信息

8.2.1.1 Design Requirements

For this example, follow the design parameters listed in Table 1.

Table 1. Design Example Electrical Characteristics

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_IN	Input voltage		8		14	V
V_IN(ripple)	Input ripple	I_OUT = 10 A			0.6	V
V_OUT	Output voltage	0 A ≤ I_OUT ≤ 10 A	1.764	1.800	1.836	V
	Line regulation	8 V ≤ V_IN ≤ 14 V			0.5%
	Load regulation	0 A ≤ I_OUT ≤ 10 A			0.5%
V_RIPPLE	Output ripple	I_OUT = 10 A			36	mV
V_OVER	Output overshoot	I_OUT falling from 7 A to 3 A		100		mV
V_UNDER	Output undershoot	I_OUT rising from 3 A to 7 A		100		mV
I_OUT	Output current	4.5 V ≤ V_IN ≤ 5.5 V	0		10	A
t_SS	Soft-start time	V_IN = 12 V		1.5		ms
I_SCP	Short-circuit current trip point		13	15		A
f_SW	Switching frequency			1200		kHz
	Size			1		in²

The bill of materials for this application is shown in Table 2. The efficiency, line, and load regulation from boards built using this design are shown in Figure 14. Gerber files and additional application information are available from the factory.

Table 2. Design Example List of Materials

REFERENCE DESIGNATOR	QTY	VALUE	DESCRIPTION	SIZE	PART NUMBER	MFR
C1	1	3.3 nF	Capacitor, Ceramic, 10 V, X7R, 20%	0603	Std	Std
C2	1	820 pF	Capacitor, Ceramic, 25 V, X7R, 10%	0603	Std	Std
C3	1	150 pF	Capacitor, Ceramic, 25 V, X7R, 10%	0603	Std	Std
C4	1	3300 pF	Capacitor, Ceramic, 25 V, X7R, 10%	0603	Std	Std
C5	1	1.0 µF	Capacitor, Ceramic, 10 V, X7R, 20%	0805	Std	Std
C6	1	100 nF	Capacitor, Ceramic, 16 V, X7R, 20%	0603	Std	Std
C7	1	1 µF	Capacitor, Ceramic, 25 V, X7R, 20%	0805	Std	Std
C8	2	10 µf	Capacitor, Ceramic, 25 V, X7R, 10%	1210	Std	Std
C11	1	330 µF	Capacitor, Aluminum, 25 V, ±20%, 160 mΩ	0.328 × 0.390 inch	EEVFK1E331P	Panasonic
C12	2	22 µF	Capacitor, Ceramic, 6.3 V, X5R, 20%	0805	Std	Std
L1	1	0.32 µH	Inductor, SMT, 17 A	0.268 × 0.268 inch	PG0083.401	Pulse
Q1	1		MOSFET, N-Channel, 25 V, 97 A, 4.6 mΩ	QFN-8 POWER	CSD16322Q5	TI
Q2	1		MOSFET, N-Channel, 25 V, 59 A, 9.6 mΩ	QFN-8 POWER	CSD16410Q5A	TI
R3	1	422 Ω	Resistor, Chip, 1/16W, 1%	0603	Std	Std
R4	1	10.0 kΩ	Resistor, Chip, 1/16W, 1%	0603	Std	Std
R5	1	4.99 kΩ	Resistor, Chip, 1/16W, 1%	0603	Std	Std
R6	1	2.20 kΩ	Resistor, Chip, 1/16W, 1%	0603	Std	Std
R8	1	100 kΩ	Resistor, Chip, 1/16W, 1%	0603	Std	Std
R10	1	2 Ω	Resistor, Chip, 1/16W, 1%	0603	Std	Std
R11	1	3.74 kΩ	Resistor, Chip, 1/16W, 1%	0603	Std	Std
U1	1		IC, 3-V to 20-V sync. 1.2-MHz Buck controller	DRC10	TPS40305DRC	TI