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ZHCSE38A August 2015 – August 2015

PRODUCTION DATA.

封裝選項

機械數(shù)據(jù) (封裝 | 引腳)

DRC|10
- MPDS117L

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

DRC|10
- QFND013N

訂購信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating temperature range (unless otherwise noted) ⁽¹⁾ ⁽²⁾

		MIN	MAX	UNIT
Supply voltage⁽¹⁾	VIN	–0.3	20	V
Supply voltage⁽¹⁾	VIN (10 ms Transient)		22	V
Output voltage	OUT	–0.3	VIN + 0.3	V
Output voltage	OUT (Transient < 1 µs)		-1.2	V
Voltage	ILIM	–0.3	7	V
	EN/UVLO	–0.3	7
	dV/dT	–0.3	7
	BFET	–0.3	30
Storage temperature range, T_stg		-65	150	°C

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values, except differential voltages, are with respect to network ground terminal.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	TYP	MAX	UNIT
Input voltage range	VIN	4.5	12	13.8	V
	BFET	0		VIN+6
	dV/dT, EN/UVLO	0		6
	ILIM	0		3
Continuous output current	I_OUT	0		5	A
Resistance	ILIM	10	100	162	kΩ
External capacitance	OUT	0.1	1	1000	µF
External capacitance	dV/dT		1	1000	nF
Operating junction temperature range, T_J		–40	25	125	°C
Operating Ambient temperature range, T_A		–40	25	85	°C

7.4 Thermal Information

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

THERMAL METRIC		TPS25924x	UNIT
		DRC (VSON)
		10 PINS
R_θJA	Junction-to-ambient thermal resistance	45.9	°C/W
R_θJCtop	Junction-to-case (top) thermal resistance	53
R_θJB	Junction-to-board thermal resistance	21.2
ψ_JT	Junction-to-top characterization parameter	1.2
ψ_JB	Junction-to-board characterization parameter	21.4
R_θJCbot	Junction-to-case (bottom) thermal resistance	5.9

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

–40°C ≤ T_J ≤ 125°C, VIN = 12 V, V_EN _/UVLO = 2 V, R_ILIM = 100 kΩ, C_dVdT = OPEN. All voltages referenced to GND (unless otherwise noted).

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
VIN (INPUT SUPPLY)
V_UVR	UVLO threshold, rising		4.15	4.3	4.45	V
V_UVhyst	UVLO hysteresis⁽¹⁾			5%
IQ_ON	Supply current	Enabled: EN/UVLO = 2 V	0.3	0.42	0.55	mA
IQ_OFF	Supply current	EN/UVLO = 0 V		0.13	0.225	mA
V_OVC	Over-voltage clamp	VIN > 16.5 V, I_OUT = 10 mA	13.8	15	16.5	V
EN/UVLO (ENABLE/UVLO INPUT)
V_ENR	EN Threshold voltage, rising		1.37	1.4	1.44	V
V_ENF	EN Threshold voltage, falling		1.32	1.35	1.39	V
I_EN	EN Input leakage current	0 V ≤ V_EN ≤ 5 V	–100	0	100	nA
dV/dT (OUTPUT RAMP CONTROL)
I_dVdT	dV/dT Charging current⁽¹⁾	V_dVdT= 0 V		220		nA
R_{dVdT_disch}	dV/dT Discharging resistance	EN/UVLO = 0 V, I_dVdT = 10 mA sinking	50	73	100	Ω
V_dVdTmax	dV/dT Max capacitor voltage⁽¹⁾			5.5		V
GAIN_dVdT	dV/dT to OUT gain⁽¹⁾	ΔV_dVdT		4.85		V/V
ILIM (CURRENT LIMIT PROGRAMMING)
I_ILIM	ILIM Bias current⁽¹⁾			10		µA
I_OL	Overload current limit⁽²⁾	R_ILIM = 10 kΩ, V_VIN-OUT = 1 V		1.02		A
		R_ILIM = 45.3 kΩ, V_VIN-OUT = 1 V	1.79	2.10	2.42
		R_ILIM = 100 kΩ, V_VIN-OUT = 1 V	3.46	3.75	4.03
		R_ILIM = 150 kΩ, V_VIN-OUT = 1 V	4.5	5.1	5.7
I_OL-R-Short		R_ILIM = 0 Ω, Shorted Resistor Current Limit (Single Point Failure Test: UL60950)⁽¹⁾		0.84		A
I_OL-R-Open		R_ILIM= OPEN, Open Resistor Current Limit (Single Point Failure Test: UL60950)⁽¹⁾		0.73		A
I_SCL	Short-circuit current limit⁽²⁾	R_ILIM = 10 kΩ, V_VIN-OUT = 12 V		1		A
		R_ILIM = 45.3 kΩ, V_VIN-OUT = 12 V	1.66	1.98	2.37
		R_ILIM = 100 kΩ, V_VIN-OUT = 12 V	2.90	3.32	3.85
		R_ILIM = 150 kΩ, V_VIN-OUT = 12 V	3.7	4.5	5.5
RATIO_FASTRIP	Fast-Trip comparator level w.r.t. overload current limit⁽¹⁾	I_FASTRIP : I_OL		160%
V_OpenILIM	ILIM Open resistor detect threshold⁽¹⁾	V_ILIM Rising, R_ILIM= OPEN		3.1		V
OUT (PASS FET OUTPUT)
R_DS(on)	FET ON resistance	T_J = 25°C	21	28	37	mΩ
R_DS(on)	FET ON resistance	T_J= 125°C		39	48	mΩ
I_OUT-OFF-LKG	OUT Bias current in off state	V_EN/UVLO = 0 V, V_OUT = 0 V (Sourcing)	–5	0	1.2	µA
I_OUT-OFF-SINK	OUT Bias current in off state	V_EN/UVLO = 0 V, V_OUT = 300 mV (Sinking)	10	15	20	µA
BFET (BLOCKING FET GATE DRIVER)
I_BFET	BFET Charging current⁽¹⁾	V_BFET = V_OUT		2		µA
V_BFETmax	BFET Clamp voltage⁽¹⁾			V_VIN + 6.4		V
R_BFETdisch	BFET Discharging resistance to GND	V_EN/UVLO = 0 V, I_BFET = 100 mA	15	26	36	Ω
TSD (THERMAL SHUT DOWN)
T_SHDN	TSD Threshold, rising⁽¹⁾			150		°C
T_SHDNhyst	TSD Hysteresis⁽¹⁾			10		°C
	Thermal fault: latched or autoretry	TPS259240	LATCHED
	Thermal fault: latched or autoretry	TPS259241	AUTO-RETRY

(1) These parameters are provided for reference only and do not constitute part of TI's published device specifications for purposes of TI's product warranty.

(2) Pulsed testing techniques used during this test maintain junction temperature approximately equal to ambient temperature.

7.6 Timing Requirements

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
T_ON	Turn-on delay⁽¹⁾	EN/UVLO → H to I_VIN= 100 mA, 1-A resistive load at OUT		220		µs
t_OFFdly	Turn Off delay⁽¹⁾	EN/UVLO↓ to BFET↓, C_BFET = 0		0.4		µs
dV/dT (OUTPUT RAMP CONTROL)
t_dVdT	Output ramp time	EN/UVLO → H to OUT = 11.7 V, C_dVdT = 0	0.7	1	1.3	ms
t_dVdT	Output ramp time	EN/UVLO → H to OUT = 11.7 V, C_dVdT = 1 nF⁽¹⁾		12		ms
ILIM (CURRENT LIMIT PROGRAMMING)
t_FastOffDly	Fast-Trip comparator delay⁽¹⁾	I_OUT > I_FASTRIP to I_OUT= 0 (Switch Off)		300		ns
BFET (BLOCKING FET GATE DRIVER)
t_BFET-ON	BFET Turn-On duration⁽¹⁾	EN/UVLO → H to V_BFET = 12 V, C_BFET = 1 nF		4.2		ms
t_BFET-ON	BFET Turn-On duration⁽¹⁾	EN/UVLO → H to VB_FET = 12 V, C_BFET = 10 nF		42		ms
t_BFET-OFF	BFET Turn-Off duration⁽¹⁾	EN/UVLO → L to _VBFET = 1 V, C_BFET = 1 nF		0.4		µs
t_BFET-OFF	BFET Turn-Off duration⁽¹⁾	EN/UVLO → L to V_BFET= 1 V, C_BFET = 10 nF		1.4		µs
THERMAL SHUTDOWN (TSD)
t_TSDdly	Retry delay after TSD recovery, T_J < [T_SHDN - 10°C]⁽¹⁾	TPS259241 only		100		µs

(1) These parameters are provided for reference only and do not constitute part of TI's published device specifications for purposes of TI's product warranty.

7.7 Typical Characteristics

T_J = 25°C, V_VIN = 12 V, V_EN/UVLO = 2 V, R_ILIM = 100 kΩ, C_VIN = 0.1 µF, C_OUT = 1 µF, C_dVdT = OPEN (unless stated otherwise)

Figure 1. Input UVLO vs Temperature

Figure 3. I_VIN-ON vs V_IN

Figure 5. R_DSON vs Temperature

Figure 7. I_dVdT vs Temperature

TPS259240 TPS259241 C015_revB_SLVSC11.gif

Figure 9. V_EN-VIH, V_EN-VIL vs Temperature

R_ILIM = 0 Ω

Figure 11. I_OL-R-Short vs Temperature

TPS259240 TPS259241 C028_SLVSC11_lvscq3.gif

R_ILIM = 100 kΩ

Figure 13. I_VOUT vs V_VIN-OUT

TPS259240 TPS259241 C027_SLVSC11_lvscq3.gif

R_ILIM = 150 kΩ

Figure 15. I_VOUT vs V_VIN-OUT

TPS259240 TPS259241 C031_SLVSC11_CU8.gif

R_ILIM = 100 kΩ

Figure 17. I_OL, I_SC vs Temperature

Figure 19. V_OpenILIM vs Temperature

Figure 21. Overload Current Limit vs RILIM Resistor

TPS259240 TPS259241 fig07_revB_SLVSC11.gif

Figure 23. Transient: Over-Voltage Clamp

TPS259240 TPS259241 fig18_revB2_lvsc11.gif

C_dVdT = 1nF, C_OUT = 10 µF, R_OUT = 5.7Ω

Figure 25. Transient: Output Ramp

TPS259240 TPS259241 fig022_revB_SLVSC11.gif

EN ↓

Figure 27. Turn Off Delay to BFET

TPS259240 TPS259241 fig38_revB2_lvsc11.gif

TPS259241

Figure 29. Transient: Recovery From Short Circuit / Over Current

TPS259240 TPS259241 fig40_revB2_lvsc11.gif

I_LOAD Stepped From 50% to 120%, back to 50%

Figure 31. Transient: Overload Current Limit

R_ILIM = 150 kΩ

Figure 33. Short Circuit (Zoom): Fast-Trip Comparator

TPS259240 TPS259241 fig42_revB2_lvsc11.gif

TPS259240

Figure 35. Transient: Thermal Fault Latched

Figure 2. I_Q-OFF vs V_IN

Figure 4. V_OVC vs Temperature Across I_OUT

Figure 6. T_ON vs Temperature

Figure 8. T_dVdT vs C_dVdT

Figure 10. I_EN (Leakage Current) vs V_EN

R_ILIM = OPEN

Figure 12. I_OL-R-Open vs Temperature

TPS259240 TPS259241 C029_SLVSC11_lvscq3.gif

R_ILIM = 45.3 kΩ

Figure 14. I_VOUT vs V_VIN-OUT

TPS259240 TPS259241 C030_SLVSC11_CU8.gif

R_ILIM = 150 kΩ

Figure 16. I_OL, I_SC vs Temperature

TPS259240 TPS259241 C032_SLVSC11_CU8.gif

R_ILIM = 45.3 kΩ

Figure 18. I_OL, I_SC vs Temperature

Figure 20. Accuracy vs Overload Current Limit

Figure 22. Thermal Shutdown Time vs Power Dissipation

TPS259240 TPS259241 fig17_revB2_lvsc11.gif

C_dVdT = OPEN, C_OUT = 4.7 µF

Figure 24. Transient: Output Ramp

TPS259240 TPS259241 fig21_revB2_lvsc11.gif

EN ↓

Figure 26. Transient: Turn Off Delay

TPS259240 TPS259241 fig23_revB2_lvsc11.gif

VIN↓

Figure 28. Turn Off Delay to BFET

TPS259240 TPS259241 fig39_revB2_lvsc11.gif

TPS259241

Figure 30. Transient: Wake Up to Short Circuit

TPS259240 TPS259241 FP_24_35_slvscu9.png

R_ILIM= 150 kΩ

Figure 32. Transient: Output Short Circuit

TPS259241

Figure 34. Transient: Thermal Fault Auto-Retry