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ZHCSFI7 September 2016 TPS2552D , TPS2553D

PRODUCTION DATA.

封裝選項

機械數(shù)據(jù) (封裝 | 引腳)

DBV|6
- MPDS026Q

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

訂購信息

zhcsfi7_oa

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) ⁽¹⁾⁽²⁾

		MIN	MAX	UNIT
	Voltage range on IN, OUT, EN , ILIM, FAULT	–0.3	7	V
	Voltage range from IN to OUT	–7	7	V
I_O	Continuous output current	Internally Limited
	Continuous total power dissipation	See the Thermal Information
	Continuous FAULT sink current	0	25	mA
	ILIM source current	0	1	mA
T_J	Maximum junction temperature	–40	150	°C
T_stg	Storage temperature	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Voltages are referenced to GND unless otherwise noted.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾	±2000	V
		Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾	±500
		IEC 61000-4-2 contact discharge⁽³⁾	±8000
		IEC 61000-4-2 air-gap discharge⁽³⁾	±15000

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

(3) Surges per EN61000-4-2. 1999 applied to output terminals of EVM. These are passing test levels, not failure threshold.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

			MIN	MAX	UNIT
V_IN	Input voltage, IN		2.7	6.5	V
V_EN	Enable voltage	TPS2552D	0	6.5	V
V_EN	Enable voltage	TPS2553D	0	6.5	V
V_EN	Enable voltage		0	6.5	V
V_IH	High-level input voltage on EN		1.1		V
V_IL	Low-level input voltage on EN			0.66	V
I_OUT	Continuous output current, OUT	–40 °C ≤ T_J ≤ 125 °C	0	1.2	A
I_OUT	Continuous output current, OUT	–40 °C ≤ T_J ≤ 105 °C	0	1.5	A
R_ILIM	Current-limit threshold resistor range (nominal 1%) from ILIM to GND		15	232	KΩ
I_O	Continuous FAULT sink current		0	10	mA
	Input de-coupling capacitance, IN to GND		0.1		μF
T_J	Operating virtual junction temperature⁽¹⁾	I_OUT ≤ 1.2 A	–40	125	°C
T_J	Operating virtual junction temperature⁽¹⁾	I_OUT ≤ 1.5 A	–40	105	°C

(1) See "Dissipation Rating Table" and "Power Dissipation and Junction Temperature" sections for details on how to calculate maximum junction temperature for specific applications and packages.

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS2552D	TPS2553D	UNIT
		DBV	DBV
		6 PINS	6 PINS
R_θJA	Junction-to-ambient thermal resistance	182.6	182.6	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	122.2	122.2	°C/W
R_θJB	Junction-to-board thermal resistance	29.4	29.4	°C/W
ψ_JT	Junction-to-top characterization parameter	20.8	20.8	°C/W
ψ_JB	Junction-to-board characterization parameter	28.9	28.9	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	N/A	N/A	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

over recommended operating conditions, V_EN = V_IN, R_FAULT = 10 kΩ (unless otherwise noted)

PARAMETER		TEST CONDITIONS⁽¹⁾				MIN	TYP	MAX	UNIT
POWER SWITCH
r_DS(on)	Static drain-source on-state resistance	DBV package, T_J = 25°C					85	95	mΩ
		DBV package, –40°C ≤T_J ≤125°C						135
		DRV package, T_J = 25°C					100	115
		DRV package, –40°C ≤T_J ≤105°C						140
		DRV package, –40°C ≤T_J ≤125°C						150
t_r	Rise time, output	V_IN = 6.5 V	C_L = 1 μF, R_L= 100 Ω, (see Figure 20)				1.1	1.5	ms
t_r	Rise time, output	V_IN = 2.5 V					0.7	1
t_f	Fall time, output	V_IN = 6.5 V				0.2		0.5
t_f	Fall time, output	V_IN = 2.5 V				0.2		0.5
ENABLE INPUT EN OR EN
	Enable pin turn on/off threshold					0.66		1.1	V
I_EN	Input current	V_EN = 0 V or 6.5 V, V_EN = 0 V or 6.5 V				–0.5		0.5	μA
t_on	Turnon time	C_L = 1 μF, R_L= 100 Ω, (see Figure 20)						3	ms
t_off	Turnoff time	C_L = 1 μF, R_L= 100 Ω, (see Figure 20)						3	ms
CURRENT LIMIT
I_OS	Current-limit threshold (Maximum DC output current I_OUT delivered to load) and Short-circuit current, OUT connected to GND			R_ILIM = 15 kΩ	–40°C ≤T_J ≤105°C	1610	1700	1800	mA
				R_ILIM = 20 kΩ	T_J = 25°C	1215	1295	1375
				R_ILIM = 20 kΩ	–40°C ≤T_J ≤125°C	1200	1295	1375
				R_ILIM = 49.9 kΩ	T_J = 25°C	490	520	550
				R_ILIM = 49.9 kΩ	–40°C ≤T_J ≤125°C	475	520	565
				R_ILIM = 210 kΩ		110	130	150
				ILIM shorted to IN		50	75	100
t_IOS	Response time to short circuit	V_IN = 5 V (see Figure 21)					2		μs
REVERSE-VOLTAGE PROTECTION
	Reverse-voltage comparator trip point (V_OUT – V_IN)					95	135	190	mV
	Time from reverse-voltage condition to MOSFET turn off	V_IN = 5 V				3	5	7	ms
SUPPLY CURRENT
I_{IN_off}	Supply current, low-level output	V_IN = 6.5 V, No load on OUT, V_EN = 0 V					0.1	1	μA
I_{IN_on}	Supply current, high-level output	V_IN = 6.5 V, No load on OUT		R_ILIM = 20 kΩ			120	150	μA
I_{IN_on}	Supply current, high-level output	V_IN = 6.5 V, No load on OUT		R_ILIM = 210 kΩ			100	130	μA
I_REV	Reverse leakage current	V_OUT = 6.5 V, V_IN = 0 V		T_J = 25 °C			0.01	1	μA
UNDERVOLTAGE LOCKOUT
UVLO	Low-level input voltage, IN	V_IN rising					2.35	2.45	V
	Hysteresis, IN	T_J = 25 °C					25		mV
FAULT FLAG
V_OL	Output low voltage, FAULT	I_/FAULT = 1 mA						180	mV
	Off-state leakage	V_/FAULT = 6.5 V						1	μA
	FAULT deglitch	FAULT assertion or de-assertion due to overcurrent condition				5	7.5	10	ms
	FAULT deglitch	FAULT assertion or de-assertion due to reverse-voltage condition				2	4	6	ms
THERMAL SHUTDOWN
	Thermal shutdown threshold					155			°C
	Thermal shutdown threshold in current-limit					135			°C
	Hysteresis						10		°C