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ZHCSJY9B June 2019 – November 2021 TPS1HB50-Q1

PRODUCTION DATA

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

PWP|16
- MPDS371C

散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)

PWP|16
- PPTD352A

訂購(gòu)信息

7.5 Electrical Characteristics

V_BB = 6 V to 18 V, T_J = –40°C to 150°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
INPUT VOLTAGE AND CURRENT
V_DSCLAMP	V_DS clamp voltage			40		46	V
V_BBCLAMP	V_BB clamp voltage			58		76	V
V_UVLOF	V_BB undervoltage lockout falling	Measured with respect to the GND pin of the device		2.0		3	V
V_UVLOR	V_BB undervoltage lockout rising	Measured with respect to the GND pin of the device		2.2		3	V
I_SB	Standby current (total device leakage including MOSFET channel)	V_BB = 13.5 V, T_J = 25°C V_EN = V_{DIA_EN} = 0 V, V_OUT = 0 V				0.1	μA
I_SB		V_BB= 13.5 V, T_J = 85°C, V_EN = V_{DIA_EN} = 0 V, V_OUT = 0 V				0.5	μA
IL_NOM	Continuous load current	T_AMB = 70°C			4		A
I_OUT(standby)	Output leakage current	V_BB = 13.5 V, T_J = 25°C V_EN = V_{DIA_EN} = 0 V, V_OUT = 0 V			0.01	0.5	μA
I_OUT(standby)	Output leakage current	V_BB= 13.5 V, T_J = 125°C V_EN = V_{DIA_EN} = 0 V, V_OUT = 0 V				1.5	μA
I_DIA	Current consumption in diagnostic mode	V_BB = 13.5 V, I_SNS = 0 mA V_EN = 0 V, V_{DIA_EN}= 5 V, V_OUT = 0V			3	6	mA
I_Q	Quiescent current	V_BB = 13.5 V V_EN = V_{DIA_EN} = 5 V, I_OUT = 0 A			3	6	mA
t_STBY	Standby mode delay time	V_EN = V_{DIA_EN} = 0 V to standby		12	17	22	ms
RON CHARACTERISTICS
R_ON	On-resistance (Includes MOSFET and package)	T_J = 25°C, 6 V ≤ V_BB ≤ 28 V			50		mΩ
		T_J = 150°C, 6 V ≤ V_BB ≤ 28 V				100	mΩ
		T_J = 25°C, 3 V ≤ V_BB ≤ 6 V				75	mΩ
R_ON(REV)	On-resistance during reverse polarity	T_J = 25°C, –18 V ≤ V_BB ≤ –8 V			50		mΩ
R_ON(REV)	On-resistance during reverse polarity	T_J = 105°C, –18 V ≤ V_BB ≤ –8 V				115	mΩ
CURRENT SENSE CHARACTERISTICS
K_SNS	Current sense ratio I_OUT / I_SNS	I_OUT = 1 A			1500
I_SNSI	Current sense current and accuracy	V_EN = V_{DIA_EN} = 5 V, V_SEL1 = 0 V	I_OUT = 3 A		2.000		mA
			I_OUT = 3 A	–4		4	%
			I_OUT = 1 A		0.667		mA
			I_OUT = 1 A	–4		4	%
			I_OUT = 300 mA		0.2		mA
			I_OUT = 300 mA	–4		4	%
			I_OUT = 100 mA		0.067		mA
			I_OUT = 100 mA	–6		6	%
			I_OUT = 50 mA		0.034		mA
			I_OUT = 50 mA	–10		10	%
			I_OUT = 20 mA		0.014		mA
			I_OUT = 20 mA	–20		20	%
TJ SENSE CHARACTERISTICS
I_SNST	Temperature sense current	V_{DIA_EN} = 5 V, V_SEL1 = 5 V	T_J = –40°C	0.00	0.12	0.38	mA
			T_J = 25°C	0.72	0.85	0.98	mA
			T_J = 85°C	1.25	1.52	1.79	mA
			T_J = 125°C	1.61	1.96	2.31	mA
			T_J = 150°C	1.80	2.25	2.70	mA
dI_SNST/dT	Coefficient				0.0112		mA/°C
SNS CHARACTERISTICS
I_SNSFH	I_SNSfault high-level	V_{DIA_EN} = 5 V, V_SEL1 = 0 V		4	4.5	5.3	mA
I_SNSleak	I_SNS leakage	V_{DIA_EN} = 0 V				1	μA
CURRENT LIMIT CHARACTERISTICS
V_SC	Short Circuit Maximum Supply Voltage	Version A				18	V
V_SC	Short Circuit Maximum Supply Voltage	Version B				18	V
I_CL	Current limit threshold	Device Version A, T_J = –40°C to 150°C	R_ILIM = GND, open, or out of range		14		A
			R_ILIM = 5 kΩ	8.32	10	12.62	A
			R_ILIM = 25 kΩ	1.325	2	3.2	A
		Device Version B, T_J = –40°C to 150°C	R_ILIM = GND, open, or out of range		26		A
			R_ILIM = 5 kΩ	14.97	18	22.72	A
			R_ILIM = 25 kΩ	2.7	3.6	4.5	A
K_CL	Current Limit Ratio	Version A			50		A * kΩ
K_CL	Current Limit Ratio	Version B			90		A * kΩ
FAULT CHARACTERISTICS
V_OL	Open-load (OL) detection voltage	V_EN = 0 V, V_{DIA_EN}= 5 V, V_SEL1 = 0 V		2	3	4	V
t_OL1	OL and STB indication-time from EN falling	V_EN= 5 V to 0 V, V_{DIA_EN} = 5 V, V_SEL1 = 0 V I_OUT = 0 mA, V_OUT = 4 V		300	500	700	μs
t_OL2	OL and STB indication-time from DIA_EN rising	V_EN = 0 V, V_{DIA_EN} = 0 V to 5 V, V_SEL1 = 0 V I_OUT= 0 mA, V_OUT = 4 V		2	20	50	μs
t_OL3	OL and STB indication-time from VOUT rising	V_EN = 0 V, V_{DIA_EN} = 5 V, V_SEL1 = 0 V I_OUT = 0 mA, V_OUT = 0 V to 4 V		2	20	50	μs
T_ABS	Thermal shutdown			150			°C
T_REL	Relative thermal shutdown				60		°C
T_HYS	Thermal shutdown hysteresis			20	25	30	°C
t_FAULT	Fault shutdown indication-time	V_{DIA_EN} = 5 V Time between switch shutdown and I_SNS settling at I_SNSFH				50	μs
t_RETRY	Retry time	Time from fault shutdown until switch re-enable (thermal shutdown or current limit).		1	2	3	ms
EN PIN CHARACTERISTICS
V_{IL, EN}	Input voltage low-level	No GND network diode				0.8	V
V_{IH, EN}	Input voltage high-level	No GND network diode		2.0			V
V_{IHYS, EN}	Input voltage hysteresis				350		mV
R_EN	Internal pulldown resistor			0.5	1	2	MΩ
I_{IL, EN}	Input current low-level	V_EN = 0.8 V			0.8		μA
I_{IH, EN}	Input current high-level	V_EN = 5 V			5.0		μA
DIA_EN PIN CHARACTERISTICS
V_{IL, DIA_EN}	Input voltage low-level	No GND network diode				0.8	V
V_{IH, DIA_EN}	Input voltage high-level	No GND network diode		2.0			V
V_{IHYS, DIA_EN}	Input voltage hysteresis				350		mV
R_{DIA_EN}	Internal pulldown resistor			0.5	1	2	MΩ
I_{IL, DIA_EN}	Input current low-level	V_{DIA_EN} = 0.8 V			0.8		μA
I_{IH, DIA_EN}	Input current high-level	V_{DIA_EN} = 5 V			5.0		μA
SEL1 PIN CHARACTERISTICS
V_{IL, SEL1}	Input voltage low-level	No GND network diode				0.8	V
V_{IH, SEL1}	Input voltage high-level	No GND network diode		2.0			V
V_{IHYS, SEL1}	Input voltage hysteresis				350		mV
R_SEL1	Internal pulldown resistor			0.5	1	2	MΩ
I_{IL, SEL1}	Input current low-level	V_SEL1 = 0.8 V			0.8		μA
I_{IH, SEL1}	Input current high-level	V_SEL1 = 5 V			5.0		μA
LATCH PIN CHARACTERISTICS
V_{IL, LATCH}	Input voltage low-level	No GND network diode				0.8	V
V_{IH, LATCH}	Input voltage high-level	No GND network diode		2.0			V
V_{IHYS, LATCH}	Input voltage hysteresis				350		mV
R_LATCH	Internal pulldown resistor			0.5	1	2	MΩ
I_{IL, LATCH}	Input current low-level	V_LATCH = 0.8 V			0.8		μA
I_{IH, LATCH}	Input current high-level	V_LATCH = 5 V			5.0		μA