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ZHCSQ23E October 2004 – May 2022 TPIC1021

PRODUCTION DATA

封裝選項(xiàng)

請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。

機(jī)械數(shù)據(jù) (封裝 | 引腳)

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購信息

7.5 Electrical Characteristics

V_SUP = 7 V to 27 V, T_A = –40°C to 125°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP⁽¹⁾	MAX	UNIT
SUPPLY
	Operational supply voltage⁽²⁾		7	14	27	V
	Nominal supply line voltage⁽²⁾		7	14	18	V
	V_SUP undervoltage threshold⁽²⁾			4.5		V
I_CC	Supply Current	Normal Mode, EN = 1, Bus dominant (total bus load > 500 ?)⁽³⁾		1.2	2.5	mA
		Standby Mode, EN = 0, Bus dominant (total bus load > 500 ?)⁽³⁾		1	2.1	mA
		Normal Mode, EN = 1, Bus recessive		300	500	μA
		Standby Mode, EN = 0, Bus recessive		300	500	μA
		Low Power Mode, EN = 0, V_SUP < 14 V, NWake = V_SUP, LIN = V_SUP		20	50	μA
		Low Power Mode, EN = 0, 14 V < V_SUP < 27 V, NWake = V_SUP, LIN = V_SUP		50	100	μA
RXD OUTPUT PIN
V_O	Output voltage		-0.3		5.5	V
I_OL	Low-level output current, open drain	LIN = 0 V, RXD = 0.4 V	3.5			mA
I_IKG	Leakage current, high-level	LIN = V_SUP, RXD = 5 V	-5	0	5	μA
TXD INPUT PIN
V_IL	Low-level input voltage⁽²⁾		-0.3		0.8	V
V_IH	High-level input voltage⁽²⁾		2		5.5	V
V_IT	Input threshold hysteresis voltage⁽²⁾		30		500	mV
	Pull-down resistor		125	350	800	k?
I_IL	Low-level input current	TXD = 0	-5	0	5	μA
LIN PIN (Referenced to V_SUP)
V_OH	High-level output voltage⁽²⁾	LIN recessive, TXD = High, I_O = 0 mA	V_SUP-1V			V
V_OL	Low-level output voltage⁽²⁾	LIN dominant, TXD = Low, I_O = 40 mA	0		0.2×V_SUP	V
	Pull-up resistor to V_SUP		20	30	60	k?
I_L	Limiting current	TXD = Low	50	150	250	mA
I_IKG	Leakage current	LIN = V_SUP	-5	0	5	μA
V_IL	Low-level input voltage⁽²⁾	LIN dominant	0×V_SUP		0.4×V_SUP	V
V_IH	High-level input voltage⁽²⁾	LIN recessive	0.6×V_SUP		V_SUP	V
V_IT	Input threshold voltage⁽²⁾		0.4×V_SUP	0.5×V_SUP	0.6×V_SUP	V
V_hys	Hysteresis voltage⁽²⁾		0.05×V_SUP		0.175×V_SUP	V
V_IL	Low-level input voltage for wake-up⁽²⁾		0		0.4×V_SUP	V
EN PIN
V_IL	Low-level input voltage⁽²⁾		-0.3		0.8	V
V_IH	High-level input voltage⁽²⁾		2		5.5	V
V_hys	Hysteresis voltage⁽²⁾		30		500	mV
	Pull-down resistor		125	350	800	k?
I_IL	Low-level input current	EN = 0 V	-5	0	5	μA
INH PIN
V_o	DC output voltage	Transient voltage	-0.3		V_SUP+0.3	V
I_O	Output current		-50		2	mA
R_on	On state resistance	Between V_SUP and INH, INH = 2 mA drive, Normal or Standby Mode	25	40	100	?
I_IKG	Leakage current	Low Power mode, 0 < INH < V_SUP	-5	0	5	μA
NWake PIN
V_IL	Low-level input voltage⁽²⁾		-0.3		V_SUP-3.3	V
V_IH	High-level input voltage⁽²⁾		V_SUP-1		V_SUP+0.3	V
	Pull-up current	NWake = 0 V	-40	-10	-4	μA
I_IKG	Leakage current	V_SUP = NWake	-5	0	5	μA
THERMAL SHUTDOWN
	Shutdown junction thermal temperature			185		°C

(1) Typical values are given for V_SUP = 14 V at 25°C.

(2) All voltages are defined with respect to ground; positive currents flow into the TPIC1021 device.

(3) In the dominant state the supply current increases as the supply voltage increases due to the integrated LIN responder termination resistance. At higher voltages the majority of supply current is through the termination resistance. The minimum resistance of the LIN responder termination is 20 k? so the maximum supply current attributed to the termination is: I_SUP _{(dom) max termination} ≈ (V_SUP – (V_{LIN_Dominant}+0.7 V) / 20 k?.