4 修訂歷史記錄
Changes from F Revision (September 2015) to G Revision
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Added a frequency test condition to capacitance in the Electrical Characteristics table. Go
Changes from E Revision (June 2014) to F Revision
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Corrected VDROP on nFET under loadGo
Changes from D Revision (April 2014) to E Revision
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Updated Recommended Operating Conditions table. Go
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Changed terminal name to ILEAK from ILGo
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Updated Electrical Characteristics OVP Circuits table.Go
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Changed tON MAX value from 18 ms to 22ms Go
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Changed tOFF 8 µs value from MAX to TYP.Go
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Changed td(OVP) 11 µs value from MAX to TYP.Go
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Changed tREC MAX value from 9 ms to 10.5 ms. Go
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Updated Application and Implementation section. Go
Changes from C Revision (December 2011) to D Revision
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Added ESD Ratings table.Go
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Added Recommended Operating Conditions table.Go
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Added Thermal Information table. Go
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Updated Electrical Characteristics OVP Circuits table.Go
Changes from B Revision (October 2011) to C Revision
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已通過(guò)更改數(shù)據(jù)表嚴(yán)格限定了參數(shù)，VOP+ 由 5.55V 變更為 5.9V。Go
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已更新 說(shuō)明）。Go
Changes from A Revision (June 2011) to B Revision
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Changed name of VCC to VBUSOUT throughout the entire document.Go
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Deleted row from Device Operation table.Go
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Added Eye Diagrams to Typical Characteristics section.Go