ZHCSQE5C April 2022 – February 2024 TMUX6236
PRODUCTION DATA
- 1
- 1 特性
- 2 應(yīng)用
- 3 說(shuō)明
- 4 Pin Configuration and Functions
-
5 Specifications
- 5.1 Absolute Maximum Ratings
- 5.2 ESD Ratings
- 5.3 Thermal Information
- 5.4 Recommended Operating Conditions
- 5.5 Source or Drain Continuous Current
- 5.6 ±15V Dual Supply: Electrical Characteristics?
- 5.7 ±15V Dual Supply: Switching Characteristics?
- 5.8 36V Single Supply: Electrical Characteristics?
- 5.9 36V Single Supply: Switching Characteristics?
- 5.10 12V Single Supply: Electrical Characteristics?
- 5.11 12V Single Supply: Switching Characteristics?
- 5.12 ±5V Dual Supply: Electrical Characteristics?
- 5.13 ±5V Dual Supply: Switching Characteristics?
- 5.14 Typical Characteristics
-
6 Parameter Measurement Information
- 6.1 On-Resistance
- 6.2 Off-Leakage Current
- 6.3 On-Leakage Current
- 6.4 Transition Time
- 6.5 tON(EN) and tOFF(EN)
- 6.6 Break-Before-Make
- 6.7 tON (VDD) Time
- 6.8 Propagation Delay
- 6.9 Charge Injection
- 6.10 Off Isolation
- 6.11 Crosstalk
- 6.12 Bandwidth
- 6.13 THD + Noise
- 6.14 Power Supply Rejection Ratio (PSRR)
- 7 Detailed Description
- 8 Application and Implementation
- 9 Device and Documentation Support
- 10Revision History
- 11Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
請(qǐng)參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- PW|16
- RUM|16
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RUM|16
訂購(gòu)信息
8.2.3 Application Curve
The low on-resistance of TMUX6236 and ultra-low charge injection performance make this device an excellent choice for implementing high precision industrial systems. The TMUX6236 contains specialized architecture to reduce charge injection on the Drain side (D) (for more details, see Section 7.2.7). Figure 8-2 shows the plot for the charge injection versus source voltage for the TMUX6236.
| TA = 25°C |