4 修訂歷史記錄
Changes from B Revision (April 2018) to C Revision
- Added BW, THD+N, and CIN rows to the Electrical Characteristics: Dual SupplyGo
- Changed VDD and VSS supply current MAX values for ±15V supplies in Electrical Characteristics: Dual SupplyGo
- Changed VDD and VSS supply current MAX values for 12V supplies in Electrical Characteristics: Single SupplyGo
Changes from A Revision (November 2017) to B Revision
- 向“特性”中添加了 WQFN 封裝 選項(xiàng)Go
- Added 在器件信息Go
- Added pinout information for WQFN packages Go
- Added data for WQFN packages to Thermal InformationGo
Changes from * Revision (November 2016) to A Revision
- Changed 將特性 列表中的轉(zhuǎn)換時(shí)間從 85ns 更改為 97ns（典型值）Go
- Added 在特性 和器件信息 部分中添加了 SOIC 封裝Go
- Added the DW (SOIC) package to the Pin Configuration and Functions sectionGo
- Added SOIC package to the Thermal Information tableGo
- Changed Transition time Typ value From 85: ns To: 97ns for ±15 V supplies in the Electrical Characteristics: Dual Supply tableGo
- Added additional specifications for the SOIC packages (QJ, Off-isolation, and channel-to-channel crosstalk) for ±15 V supplies in Electrical Characteristics: Dual SupplyGo
- Changed Transition time Typ value From: 91 To: 102 ns for 12 V supply in the Electrical Characteristics: Single Supply tableGo
- Added additional specifications for the SOIC packages (QJ, Off-isolation, and channel-to-channel crosstalk) for 12 V supply in Electrical Characteristics: Single SupplyGo