SNOSAG7D August 2005 – August 2016 LPV511
PRODUCTION DATA.
- 1 Features
- 2 Applications
- 3 Description
- 4 Revision History
- 5 Pin Configuration and Functions
- 6 Specifications
- 7 Detailed Description
- 8 Application and Implementation
- 9 Power Supply Recommendations
- 10Layout
- 11Device and Documentation Support
- 12Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- DCK|5
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
訂購信息
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)(2)| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| VIN Differential | 2.1 | V | ||
| Supply voltage (V+ - V−) | 13.2 | V | ||
| Voltage at input and output pins | V+ + 0.3 | V− − 0.3 | V | |
| Short-circuit duration | See(3) | |||
| Junction temperature, TJ(4) | 150 | °C | ||
| Storage temperature, Tstg | –65 | 150 | °C | |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/ Distributors for availability and specifications.
(3) Output short-circuit duration is infinite for V+ < 6 V at room temperature and below. For V+ > 6 V, allowable short-circuit duration is 1.5 ms.
(4) The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA) / RθJA. All numbers apply for packages soldered directly onto a PC board.
6.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)(2) | ±2000 | V |
| Machine model (MM)(3) | ±200 | |||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) Human Body Model: 1.5 kΩ in series with 100 pF.
(3) Machine Model: 0 Ω in series with 200 pF.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Temperature(1) | –40 | 85 | °C | |
| Supply voltage (V+ – V−) | 2.7 | 12 | V | |
(1) The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA) / RθJA. All numbers apply for packages soldered directly onto a PC board.
6.4 Thermal Information
| THERMAL METRIC(1) | LPV511 | UNIT | |
|---|---|---|---|
| DCK (SC70) | |||
| 5 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 278 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 105.8 | °C/W |
| RθJB | Junction-to-board thermal resistance | 56.4 | °C/W |
| ψJT | Junction-to-top characterization parameter | 3 | °C/W |
| ψJB | Junction-to-board characterization parameter | 55 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | n/a | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
6.5 Electrical Characteristics: 3 V
Unless otherwise specified, all limits are specified for TJ = 25°C, V+ = 3 V, V− = 0 V, VCM = VO = V+/2, and RL = 100 kΩ to V+/2.(1)| PARAMETER | TEST CONDITIONS | MIN(2) | TYP(3) | MAX(2) | UNIT | ||
|---|---|---|---|---|---|---|---|
| VOS | Input offset voltage | TJ = 25°C | ±0.2 | ±3 | mV | ||
| TJ = –40°C to 85°C | ±3.8 | ||||||
| TC VOS | Input offset voltage drift(4) | TJ = 25°C | ±0.3 | µV/°C | |||
| TJ = –40°C to 85°C | ±15 | ||||||
| IB | Input bias current(5) | VCM = 0.5 V | TJ = 25°C | –1000 | –320 | pA | |
| TJ = –40°C to 85°C | –1600 | ||||||
| VCM = 2.5 V | TJ = 25°C | 110 | 800 | ||||
| TJ = –40°C to 85°C | 1900 | ||||||
| IOS | Input offset current | ±10 | pA | ||||
| CMRR | Common mode rejection ratio | VCM Stepped from 0 V to 1.5 V | TJ = 25°C | 77 | 100 | dB | |
| TJ = –40°C to 85°C | 70 | ||||||
| VCM Stepped from 2.4 V to 3 V | TJ = 25°C | 75 | 115 | ||||
| TJ = –40°C to 85°C | 68 | ||||||
| VCM Stepped from 0.5 V to 2.5 V | TJ = 25°C | 60 | 80 | ||||
| TJ = –40°C to 85°C | 56 | ||||||
| PSRR | Power supply rejection ratio | V+ = 2.7 V to 5 V, VCM = 0.5 V |
TJ = 25°C | 72 | 114 | dB | |
| TJ = –40°C to 85°C | 68 | ||||||
| V+ = 3 V to 5 V, VCM = 0.5 V |
TJ = 25°C | 76 | 115 | ||||
| TJ = –40°C to 85°C | 72 | ||||||
| V+ = 5 V to 12 V, VCM = 0.5 V |
TJ = 25°C | 84 | 117 | ||||
| TJ = –40°C to 85°C | 80 | ||||||
| CMVR | Input common-mode voltage | CMRR ≥ 50 dB | TJ = 25°C | −0.1 | 3.1 | V | |
| TJ = –40°C to 85°C | 0 | 3 | |||||
| AVOL | Large signal voltage gain | Sinking, VO = 2.5 V | TJ = 25°C | 75 | 105 | dB | |
| TJ = –40°C to 85°C | 70 | ||||||
| Sourcing, VO = 0.5 V | TJ = 25°C | 75 | 105 | ||||
| TJ = –40°C to 85°C | 70 | ||||||
| VO | Output swing high | VID = 100 mV | TJ = 25°C | 2.85 | 2.9 | V | |
| TJ = –40°C to 85°C | 2.8 | ||||||
| Output swing low | VID = −100 mV | TJ = 25°C | 100 | 150 | |||
| TJ = –40°C to 85°C | 200 | ||||||
| ISC | Output short circuit current(6) | Sourcing VID = 100 mV |
−500 | −225 | µA | ||
| Sinking VID = −100 mV |
225 | 1350 | |||||
| IS | Supply current | TJ = 25°C | 0.88 | 1.2 | µA | ||
| TJ = –40°C to 85°C | 1.5 | ||||||
| SR | Slew rate(7) | AV = 1, VO ramps from 0.5 V to 2.5 V | TJ = 25°C | 5.25 | 7.7 | V/ms | |
| TJ = –40°C to 85°C | 3.10 | ||||||
| GBW | Gain bandwidth product | RL = 1 MΩ, CL= 50 pF | 27 | kHz | |||
| Phase margin | RL = 1 MΩ, CL= 50 pF | 53 | º | ||||
| en | Input-referred voltage noise | f = 100 Hz | 320 | nV/√Hz | |||
| in | Input-referred current noise | f = 10 Hz | 0.02 | pA/√Hz | |||
| f = 1 kHz | 0.01 | ||||||
(1) Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device.
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using the Statistical Quality Control (SQC) method.
(3) Typical values represent the most likely parametric norm at the time of characterization.
(4) Offset voltage drift is specified by design and/or characterization and is not tested in production. Offset voltage drift is determined by dividing the change in VOS at temperature extremes into the total temperature change.
(5) Positive current corresponds to current flowing into the device.
(6) The Short-Circuit Test is a momentary test. See Note 3 in Absolute Maximum Ratings.
(7) Slew rate is the average of the rising and falling slew rates.
6.6 Electrical Characteristics: 5 V
Unless otherwise specified, all limits are specified for TJ = 25°C, V+ = 5 V, V− = 0 V, VCM = VO = V+/2, and RL = 100 kΩ to V+/2.(1)| PARAMETER | TEST CONDITIONS | MIN(2) | TYP(3) | MAX(2) | UNIT | ||
|---|---|---|---|---|---|---|---|
| VOS | Input offset voltage | TJ = 25°C | ±0.2 | ±3 | mV | ||
| TJ = –40°C to 85°C | ±3.8 | ||||||
| TC VOS | Input offset voltage drift(4) | TJ = 25°C | ±0.3 | µV/°C | |||
| TJ = –40°C to 85°C | ±15 | ||||||
| IB | Input bias current(5) | VCM = 0.5 V | TJ = 25°C | –1000 | –320 | pA | |
| TJ = –40°C to 85°C | –1600 | ||||||
| VCM = 4.5 V | TJ = 25°C | 110 | 800 | ||||
| TJ = –40°C to 85°C | 1900 | ||||||
| IOS | Input offset current | ±10 | pA | ||||
| CMRR | Common mode rejection ratio | VCM Stepped from 0 V to 2.5 V |
TJ = 25°C | 80 | 115 | dB | |
| TJ = –40°C to 85°C | 73 | ||||||
| VCM Stepped from 4.4 to 5 V |
TJ = 25°C | 75 | 107 | ||||
| TJ = –40°C to 85°C | 68 | ||||||
| VCM Stepped from 0.5 to 4.5 V |
TJ = 25°C | 65 | 87 | ||||
| TJ = –40°C to 85°C | 62 | ||||||
| PSRR | Power supply rejection ratio | V+ = 2.7 V to 5 V, VCM = 0.5 V |
TJ = 25°C | 72 | 114 | dB | |
| TJ = –40°C to 85°C | 68 | ||||||
| V+ = 3 V to 5 V, VCM = 0.5 V |
TJ = 25°C | 76 | 115 | ||||
| TJ = –40°C to 85°C | 72 | ||||||
| V+ = 5 V to 12 V, VCM = 0.5 V |
TJ = 25°C | 84 | 117 | ||||
| TJ = –40°C to 85°C | 80 | ||||||
| CMVR | Input common-mode voltage | CMRR ≥ 50 dB | TJ = 25°C | —0.1 | 5.1 | V | |
| TJ = –40°C to 85°C | 0 | 5 | |||||
| AVOL | Large signal voltage gain | Sinking, VO = 4.5 V | TJ = 25°C | 78 | 110 | dB | |
| TJ = –40°C to 85°C | 73 | ||||||
| Sourcing, VO = 0.5 V | TJ = 25°C | 78 | 110 | ||||
| TJ = –40°C to 85°C | 73 | ||||||
| VO | Output swing high | VID = 100 mV | TJ = 25°C | 4.8 | 4.89 | V | |
| TJ = –40°C to 85°C | 4.75 | ||||||
| Output swing low | VID = −100 mV | TJ = 25°C | 110 | 200 | mV | ||
| TJ = –40°C to 85°C | 250 | ||||||
| ISC | Output short circuit current(6) | Sourcing to V−
VID = 100 mV |
–550 | –225 | µA | ||
| Sinking to V+
VID = −100 mV |
225 | 1350 | |||||
| IS | Supply current | TJ = 25°C | 0.97 | 1.2 | µA | ||
| TJ = –40°C to 85°C | 1.5 | ||||||
| SR | Slew rate(7) | AV = 1, VO ramps from 0.5 V to 4.5 V |
TJ = 25°C | 5.25 | 7.5 | V/ms | |
| TJ = –40°C to 85°C | 3.1 | ||||||
| GBW | Gain bandwidth product | RL = 1 MΩ, CL= 50 pF | 27 | kHz | |||
| Phase margin | RL = 1 MΩ, CL= 50 pF | 53 | ° | ||||
| en | Input-referred voltage noise | f = 100 Hz | 320 | nV/√Hz | |||
| in | Input-referred current noise | f = 10 Hz | 0.02 | pA/√Hz | |||
| f = 1 kHz | 0.01 | ||||||
(1) Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device.
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using the Statistical Quality Control (SQC) method.
(3) Typical values represent the most likely parametric norm at the time of characterization.
(4) Offset voltage drift is specified by design and/or characterization and is not tested in production. Offset voltage drift is determined by dividing the change in VOS at temperature extremes into the total temperature change.
(5) Positive current corresponds to current flowing into the device.
(6) The Short-Circuit Test is a momentary test. See Note 3 in Absolute Maximum Ratings.
(7) Slew rate is the average of the rising and falling slew rates.
6.7 Electrical Characteristics: 12 V
Unless otherwise specified, all limits are specified for TJ = 25°C, V+ = 12 V, V− = 0 V, VCM = VO = V+/2, and RL = 100 kΩ to V+/2.(1)| PARAMETER | TEST CONDITIONS | MIN(2) | TYP (3) | MAX (2) | UNIT | ||
|---|---|---|---|---|---|---|---|
| VOS | Input offset voltage | TJ = 25°C | ±0.2 | ±3 | mV | ||
| TJ = –40°C to 85°C | ±3.8 | ||||||
| TC VOS | Input offset voltage drift(4) | TJ = 25°C | ±0.3 | µV/°C | |||
| TJ = –40°C to 85°C | ±15 | ||||||
| IB | Input bias current(5) | VCM = 0.5 V | TJ = 25°C | −1000 | −320 | pA | |
| TJ = –40°C to 85°C | −1600 | ||||||
| VCM = 11.5 V | TJ = 25°C | 110 | 800 | ||||
| TJ = –40°C to 85°C | 1900 | ||||||
| IOS | Input offset current | ±10 | pA | ||||
| CMRR | Common mode rejection ratio | VCM Stepped from 0 V to 6 V |
TJ = 25°C | 75 | 115 | dB | |
| TJ = –40°C to 85°C | 70 | ||||||
| VCM Stepped from 11.4 V to 12 V |
TJ = 25°C | 75 | 110 | ||||
| TJ = –40°C to 85°C | 68 | ||||||
| VCM Stepped from 0.5 V to 11.5 V |
TJ = 25°C | 70 | 97 | ||||
| TJ = –40°C to 85°C | 65 | ||||||
| PSRR | Power supply rejection ratio | V+ = 2.7 V to 5 V, VCM = 0.5 V |
TJ = 25°C | 72 | 114 | ||
| TJ = –40°C to 85°C | 68 | ||||||
| V+ = 3 V to 5 V, VCM = 0.5 V |
TJ = 25°C | 76 | 115 | ||||
| TJ = –40°C to 85°C | 72 | ||||||
| V+ = 5 V to 12 V, VCM = 0.5 V |
TJ = 25°C | 84 | 117 | ||||
| TJ = –40°C to 85°C | 80 | ||||||
| CMVR | Input common-mode voltage | CMRR ≥ 50 dB | TJ = 25°C | −0.1 | 12.1 | V | |
| TJ = –40°C to 85°C | 0 | 12 | |||||
| AVOL | Large signal voltage gain | Sinking, VO = 0.5 V | TJ = 25°C | 89 | 110 | dB | |
| TJ = –40°C to 85°C | 84 | ||||||
| Sourcing, VO = 11.5 V | TJ = 25°C | 89 | 110 | ||||
| TJ = –40°C to 85°C | 84 | ||||||
| VO | Output swing high | VID = 100 mV | TJ = 25°C | 11.8 | 11.85 | V | |
| TJ = –40°C to 85°C | 11.72 | ||||||
| Output swing low | VID = −100 mV | TJ = 25°C | 150 | 200 | mV | ||
| TJ = –40°C to 85°C | 280 | ||||||
| ISC | Output short circuit current(6) | Sourcing VID = 100 mV |
−650 | −200 | µA | ||
| Sinking VID = −100 mV |
200 | 1300 | |||||
| IS | Supply current | TJ = 25°C | 1.2 | 1.75 | µA | ||
| TJ = –40°C to 85°C | 2.5 | ||||||
| SR | Slew rate(7) | AV = 1, VO ramped from 1 V to 11 V | 5.25 | 7 | V/ms | ||
| 3.1 | |||||||
| GBW | Gain bandwidth product | RL = 1 MΩ, CL= 50 pF | 25 | kHz | |||
| Phase margin | RL = 1 MΩ, CL= 50 pF | 52 | ° | ||||
| en | Input-referred voltage noise | f = 100 Hz | 320 | nV/√Hz | |||
| in | Input-referred current noise | f = 10 Hz | 0.02 | pA/√Hz | |||
| f = 1 kHz | 0.01 | ||||||
(1) Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device.
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using the Statistical Quality Control (SQC) method.
(3) Typical values represent the most likely parametric norm at the time of characterization.
(4) Offset voltage drift is specified by design and/or characterization and is not tested in production. Offset voltage drift is determined by dividing the change in VOS at temperature extremes into the total temperature change.
(5) Positive current corresponds to current flowing into the device.
(6) The Short-Circuit Test is a momentary test. See Note 3 in Absolute Maximum Ratings.
(7) Slew rate is the average of the rising and falling slew rates.
6.8 Typical Characteristics
At TJ = 25°C, unless otherwise specified.
