ZHCSKB5A October 2019 – February 2020 LMR36510
PRODUCTION DATA.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY VOLTAGE (VIN PIN) | ||||||
| IQ-nonSW | Operating quiescent current (non-switching)(2) | VEN = 3.3 V (PFM variant only) | 26 | 36 | µA | |
| ISD | Shutdown quiescent current; measured at VIN pin | VEN = 0 V | 5.3 | µA | ||
| ENABLE (EN PIN) | ||||||
| VEN-VCC-H | Enable input high level for VCC output | VENABLE rising | 1.14 | V | ||
| VEN-VCC-L | Enable input low level for VCC output | VENABLE falling | 0.3 | V | ||
| VEN-VOUT-H | Enable input high level for VOUT | VENABLE rising | 1.157 | 1.231 | 1.3 | V |
| VEN-VOUT-HYS | Enable input hysteresis for VOUT | Hysteresis below VENABLE-H; falling | 110 | mV | ||
| ILKG-EN | Enable input leakage current | VEN = 3.3V | 2.7 | nA | ||
| INTERNAL LDO (VCC PIN) | ||||||
| VCC | Internal VCC voltage | 6 V ≤ VIN ≤ 65 V | 4.75 | 5 | 5.25 | V |
| VCC-UVLO-Rising | Internal VCC undervoltage lockout | VCC rising | 3.6 | 3.8 | 4.0 | V |
| VCC-UVLO-Falling | Internal VCC undervoltage lockout | VCC falling | 3.1 | 3.3 | 3.5 | V |
| VOLTAGE REFERENCE (FB PIN) | ||||||
| VFB | Feedback voltage | 0.985 | 1 | 1.015 | V | |
| ILKG-FB | Feedback leakage current | FB = 1 V | 2.1 | nA | ||
| CURRENT LIMITS AND HICCUP | ||||||
| ISC | High-side current limit(3) | 1.6 | 2 | 2.4 | A | |
| ILS-LIMIT | Low-side current limit(3) | 1 | 1.3 | 1.6 | A | |
| IL-ZC | Zero cross detector threshold | PFM variants only | 0.04 | A | ||
| IPEAK-MIN | Minimum inductor peak current(3) | 0.28 | A | |||
| POWER GOOD (PGOOD PIN) | ||||||
| VPG-HIGH-UP | Power-Good upper threshold - rising | % of FB voltage | 105% | 107% | 110% | |
| VPG-LOW-DN | Power-Good lower threshold - falling | % of FB voltage | 90% | 93% | 95% | |
| VPG-HYS | Power-Good hysteresis (rising & falling) | % of FB voltage | 1.5% | |||
| VPG-VALID | Minimum input voltage for proper Power-Good function | 2 | V | |||
| RPG | Power-Good on-resistance | VEN = 2.5 V | 80 | 165 | Ω | |
| RPG | Power-Good on-resistance | VEN = 0 V | 35 | 90 | Ω | |
| MOSFETS | ||||||
| RDS-ON-HS | High-side MOSFET ON-resistance | IOUT = 0.5 A | 245 | 465 | mΩ | |
| RDS-ON-LS | Low-side MOSFET ON-resistance | IOUT = 0.5 A | 165 | 310 | mΩ | |