ZHCSCE4B April 2014 – July 2017 CSD95378BQ5M
PRODUCTION DATA.
- 1特性
- 2應(yīng)用
- 3說明
- 4修訂歷史記錄
- 5Pin Configuration and Functions
- 6Specifications
- 7Application Schematic
- 8器件和文檔支持
- 9機(jī)械、封裝和可訂購信息
封裝選項(xiàng)
請(qǐng)參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- DQP|12
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
訂購信息
5 Pin Configuration and Functions
13-Pin SON
Top View
Pin Functions
| PIN | DESCRIPTION | |
|---|---|---|
| NAME | NO. | |
| BOOT | 9 | Bootstrap capacitor connection. Connect a minimum of 0.1-µF, 16-V, X7R ceramic capacitor from BOOT to BOOT_R pins. The bootstrap capacitor provides the charge to turn on the control FET. The bootstrap diode is integrated. |
| BOOT_R | 8 | Return path for HS gate driver, connected to VSW internally. |
| ENABLE | 3 | Enables device operation. If ENABLE = logic HIGH, turns on device. If ENABLE = logic LOW, the device is turned off and both MOSFET gates are actively pulled low. An internal 100-kΩ pulldown resistor will pull the ENABLE pin LOW if left floating. |
| FCCM | 10 | This pin enables the Diode Emulation function. When this pin is held LOW, Diode Emulation Mode is enabled for sync FET. When FCCM is HIGH, the device is operated in Forced Continuous Conduction Mode. An internal 5-µA current source will pull the FCCM pin to 3.3 V if left floating. |
| IOUT | 1 | Output of current sensing amplifier. V(IOUT) – V(REFIN) is proportional to the phase current. |
| PGND | 4 | Power ground, connected directly to pin 13. |
| PGND | 13 | Power ground. |
| PWM | 12 | Pulse width modulated tri-state input from external controller. Logic LOW sets control FET gate low and sync FET gate high. Logic HIGH sets control FET gate high and sync FET gate low. Open or Hi-Z sets both MOSFET gates low if greater than the tri-state shutdown hold-off time (t3HT). |
| REFIN | 2 | External reference voltage input for current sensing amplifier. |
| TAO/ FAULT |
11 | Temperature analog output. Reports a voltage proportional to the die temperature. An ORing diode is integrated in the IC. When used in multiphase application, a single wire can be used to connect the TAO pins of all the ICs. Only the highest temperature will be reported. TAO will be pulled up to 3.3 V if thermal shutdown occurs. TAO should be bypassed to PGND with a 1-nF, 16-V, X7R ceramic capacitor. |
| VDD | 5 | Supply voltage to gate driver and internal circuitry. |
| VIN | 7 | Input voltage pin. Connect input capacitors close to this pin. |
| VSW | 6 | Phase node connecting the HS MOSFET source and LS MOSFET drain - pin connection to the output inductor. |