ZHCSGW6C October 2017 – June 2024 CSD25501F3
PRODUCTION DATA
- 1
- 1特性
- 2應(yīng)用
- 3說明
- 4Specifications
- 5Device and Documentation Support
- 6Revision History
- 7Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
請(qǐng)參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- YJN|3
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
訂購(gòu)信息
4.3 Typical MOSFET Characteristics
TA = 25°C (unless otherwise stated)
Figure 4-1 Transient Thermal Impedance
Figure 4-2 Saturation Characteristics
| ID = –0.4A | VDS = –10V | ||
| ID = –250μA | ||
| ID = –0.4A | ||
| Single pulse, typical RθJA = 255°C/W | ||
| VDS = –5V | ||
Figure 4-5 Capacitance
Figure 4-7 On-State Resistance vs Gate-to-Source Voltage
Figure 4-9 Typical Diode Forward Voltage
| Typical RθJA = 90°C/W | ||