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ZHCSD48A December 2014 – August 2016 CSD23203W

PRODUCTION DATA.

請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。

5 Specifications

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_D = –250 μA	–8			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = –6.4 V			–1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = –6 V			–100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = –250 μA	-0.6	–0.8	–1.1	V
R_DS(on)	Drain-to-source on-resistance	V_GS = –1.8 V, I_D = –1.5 A		35	53	mΩ
		V_GS = –2.5 V, I_D = –1.5 A		22	26.5	mΩ
		V_GS = –4.5 V, I_D = –1.5 A		16.2	19.4	mΩ
g_fs	Transconductance	V_DS = –0.8 V, I_D = –1.5 A		14		S
DYNAMIC CHARACTERISTICS
C_ISS	Input capacitance	V_GS = 0 V, V_DS = –4 V, ƒ = 1 MHz		703	914	pF
C_OSS	Output capacitance			391	508	pF
C_RSS	Reverse transfer capacitance			133	172	pF
Q_g	Gate charge total (–4.5 V)	V_DS = –4 V, I_D = –1.5 A		4.9	6.3	nC
Q_gd	Gate charge gate-to-drain			0.6		nC
Q_gs	Gate charge gate-to-source			1.3		nC
Q_g(th)	Gate charge at V_th			0.6		nC
Q_OSS	Output charge	V_DS = –4 V, V_GS = 0 V		1.9		nC
t_d(on)	Turnon delay time	V_DS = –4 V, V_GS = –4.5 V, I_D = –1.5 A R_G = 10 Ω		14		ns
t_r	Rise time			12		ns
t_d(off)	Turnoff delay time			58		ns
t_f	Fall time			27		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_S = –1.5 A, V_GS = 0 V		–0.75	–1	V
Q_rr	Reverse recovery charge	V_DS= –4.7 V, I_F = –1.5 A di/dt = 100 A/μs		6.1		nC
t_rr	Reverse recovery time	V_DS= –4.7 V, I_F = –1.5 A di/dt = 100 A/μs		21		ns

T_A = 25°C (unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJA	Junction-to-ambient thermal resistance⁽¹⁾		170		°C/W
R_θJA	Junction-to-ambient thermal resistance⁽²⁾		55		°C/W

(1) Device mounted on FR4 material with minimum Cu mounting area.

(2) Device mounted on FR4 material with 1-in² (6.45-cm²), 2-oz (0.071-mm) thick Cu.

Typ R_θJA = 55°C/W when mounted on
1 in² of 2-oz Cu.

Typ R_θJA = 170°C/W when mounted on minimum pad area of
2-oz Cu.

T_A = 25°C (unless otherwise stated)

Figure 1. Transient Thermal Impedance

SPACE

Figure 2. Saturation Characteristics

	I_D = –1.5 A	V_DS = –4 V

Figure 4. Gate Charge

	I_D = –250 µA

Figure 6. Threshold Voltage vs Temperature

	I_D = –1.5 A

Figure 8. Normalized On-State Resistance vs Temperature

Single Pulse, Typical R_θJA = 170°C/W

Figure 10. Maximum Safe Operating Area

	V_DS = –5 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Maximum Drain Current vs Temperature