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SCAS877F May 2009 – January 2016 CDCLVP1216

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

RGZ|48
- MPQF123F

散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)

RGZ|48
- QFND131R

訂購(gòu)信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
V_CC	Supply voltage⁽²⁾	–0.5	4.6	V
V_IN	Input voltage⁽³⁾	–0.5	V_CC + 0.5	V
V_OUT	Output voltage⁽³⁾	–0.5	V_CC + 0.5	V
I_IN	Input current		20	mA
I_OUT	Output current		50	mA
T_A	Specified free-air temperature (no airflow)	–40	85	°C
T_J	Maximum junction temperature		125	°C
T_stg	Storage temperature	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All supply voltages must be supplied simultaneously.

(3) The input and output negative voltage ratings may be exceeded if the input and output clamp-current ratings are observed.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge⁽²⁾	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾	2000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) Electrostatic discharge (ESD) to measure device sensitivity and immunity to damage caused by assembly line electrostatic discharges in to the device.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

PARAMETER		MIN	NOM	MAX	UNIT
V_CC	Supply voltage	2.375	2.50/3.30	3.60	V
T_A	Ambient temperature	–40		85	°C
T_PCB	PCB temperature (measured at thermal pad)			105	°C

6.4 Thermal Information

THERMAL METRIC⁽³⁾⁽²⁾⁽¹⁾			CDCLVP1216	UNIT
			RGZ (VQFN)
			48 PINS
R_θJA	Junction-to-ambient thermal resistance⁽⁵⁾	0 LFM	33.8	°C/W
		150 LFM	22.6
		400 LFM	19.2
R_θJC(top)	Junction-to-case (top) thermal resistance		18.2	°C/W
R_θJP	Thermal resistance, junction-to-pad⁽⁴⁾		3.67	°C/W
ψ_JT	Junction-to-top characterization parameter		0.5	°C/W
ψ_JB	Junction-to-board characterization parameter		8.3	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance		3.8	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report (SPRA953).

(2) The package thermal resistance is calculated in accordance with JESD 51 and JEDEC 2S2P (high-K board).

(3) Connected to GND with 16 thermal vias (0.3-mm diameter).

(4) R_θJP (junction-to-pad) is used for the VQFN package, because the primary heat flow is from the junction to the GND pad of the VQFN package.

(5) 4 × 4 vias on pad

6.5 Electrical Characteristics: LVCMOS Input

at V_CC = 2.375 V to 3.6 V and T_A = –40°C to +85°C and T_PCB ≤ 105°C (unless otherwise noted)⁽¹⁾

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
f_IN	Input frequency				200	MHz
V_th	Input threshold voltage	External threshold voltage applied to complementary input	1.1		1.8	V
V_IH	Input high voltage		V_th + 0.1		V_CC	V
V_IL	Input low voltage		0		V_th – 0.1	V
I_IH	Input high current	V_CC= 3.6 V, V_IH = 3.6 V			40	μA
I_IL	Input low current	V_CC= 3.6 V, V_IL = 0 V			–40	μA
ΔV/ΔT	Input edge rate	20% to 80%	1.5			V/ns
I_CAP	Input capacitance			5		pF

(1) Figure 6 and Figure 7 show DC test setup.

6.6 Electrical Characteristics: Differential Input

at V_CC = 2.375 V to 3.6 V and T_A = –40°C to +85°C and T_PCB ≤ 105°C (unless otherwise noted)⁽¹⁾

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
f_IN	Input frequency	Clock input			2000	MHz
V_{IN, DIFF, PP}	Differential input peak-peak voltage	f_IN ≤ 1.5 GHz	0.1		1.5	V
V_{IN, DIFF, PP}	Differential input peak-peak voltage	1.5 GHz ≤ f_IN ≤ 2 GHz	0.2		1.5	V
V_ICM	Input common-mode level		1		V_CC – 0.3	V
I_IH	Input high current	V_CC= 3.6 V, V_IH = 3.6 V			40	μA
I_IL	Input low current	V_CC= 3.6 V, V_IL = 0 V			–40	μA
ΔV/ΔT	Input edge rate	20% to 80%	1.5			V/ns
I_CAP	Input capacitance			5		pF

(1) Figure 5 and Figure 8 show DC test setup. Figure 9 shows AC test setup.

6.7 Electrical Characteristics: LVPECL Output, at V_CC = 2.375 V to 2.625 V

T_A = –40°C to +85°C and T_PCB ≤ 105°C (unless otherwise noted) ⁽¹⁾

	PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_OH	Output high voltage	T_A ≤ 85°C	V_CC – 1.26		V_CC – 0.9	V
V_OH	Output high voltage	T_PCB ≤ 105°C	V_CC – 1.26		V_CC – 0.83	V
V_OL	Output low voltage	T_A ≤ 85°C	V_CC – 1.7		V_CC – 1.3	V
V_OL	Output low voltage	T_PCB ≤ 105°C	V_CC – 1.7		V_CC – 1.25	V
V_{OUT, DIFF, PP}	Differential output peak-peak voltage	f_IN ≤ 2 GHz	0.5		1.35	V
V_{OUT, DIFF, PP}	Differential output peak-peak voltage	f_IN = 125 MHz, 312.5 MHz		1.15		V
V_{AC_REF}	Input bias voltage⁽²⁾	I_{AC_REF} = 2 mA	V_CC – 1.6		V_CC – 1.1	V
t_SK,PP	Part-to-part skew				150	ps
t_SK,O	Output skew				30	ps
t_SK,P	Pulse skew (with 50% duty cycle input)	Crossing-point-to-crossing-point distortion, f_OUT = 100 MHz	–50		50	ps

(1) Figure 10 and Figure 11 show DC and AC test setup.

(2) Internally generated bias voltage (V_{AC_REF}) is for 3.3-V operation only. It is recommended to apply externally generated bias voltage for V_CC < 3 V.

6.8 Electrical Characteristics: LVPECL Output, at V_CC = 3 V to 3.6 V

T_A = –40°C to +85°C and T_PCB ≤ 105°C (unless otherwise noted)⁽¹⁾

	PARAMETER	TEST CONDITIONS	MIN	MAX	UNIT
V_OH	Output high voltage	T_A ≤ 85°C	V_CC – 1.26	V_CC – 0.9	V
V_OH	Output high voltage	T_PCB ≤ 105°C	V_CC – 1.26	V_CC – 0.85	V
V_OL	Output low voltage	T_A ≤ 85°C	V_CC – 1.7	V_CC – 1.3	V
V_OL	Output low voltage	T_PCB ≤ 105°C	V_CC – 1.7	V_CC – 1.3	V
V_{OUT, DIFF, PP}	Differential output peak-peak voltage	f_IN ≤ 2 GHz	0.65	1.35	V
V_{AC_REF}	Input bias voltage	I_{AC_REF} = 2 mA	V_CC – 1.6	V_CC – 1.1	V
I_EE	Supply internal current	Outputs unterminated, T_A ≤ 85°C		110	mA
I_EE	Supply internal current	T_PCB ≤ 105°C		112	mA
I_CC	Output and internal supply current	All outputs terminated, 50 Ω to V_CC – 2 T_A ≤ 85°C		618	mA
I_CC	Output and internal supply current	T_PCB ≤ 105°C		675	mA

(1) Figure 10 and Figure 11 show DC and AC test setup.

6.9 Timing Requirements, at V_CC = 2.375 V to 2.625 V

Refer to Figure 1 and Figure 2.

			MIN	NOM	MAX	UNIT
t_PD	Propagation delay	V_{IN, DIFF, PP} = 0.1 V			550	ps
t_PD	Propagation delay	V_{IN, DIFF, PP} = 0.3 V			550	ps
t_SK,PP	Part-to-part skew				150	ps
t_SK,O	Output skew				30	ps
t_SK,P	Pulse skew (with 50% duty cycle input)	Crossing-point-to-crossing-point distortion, f_OUT = 100 MHz	–50		50	ps
t_RJIT	Random additive jitter (with 50% duty cycle input)⁽¹⁾	f_OUT = 100 MHz, V_IN,SE = V_CC, V_th = 1.25 V, 10 kHz to 20 MHz		0.11		ps, RMS
		f_OUT = 100 MHz, V_IN,SE = 0.9 V, V_th = 1.1 V, 10 kHz to 20 MHz		0.128
		f_OUT = 2 GHz, V_IN,DIFF,PP = 0.2 V, V_ICM = 1 V, 10 kHz to 20 MHz		0.053
		f _OUT = 100 MHz, V_IN,DIFF,PP = 0.15 V, V_ICM = 1 V, 10 kHz to 20 MHz		0.093
		f_OUT = 100 MHz, V_IN,DIFF,PP = 1 V, V_ICM = 1 V, 10 kHz to 20 MHz		0.092
		f_OUT = 122.88 MHz,⁽²⁾⁽³⁾ Square Wave, V_IN-PP = 1 V, 12 kHz to 20 MHz		0.057	0.088
		f_OUT = 122.88 MHz,⁽²⁾⁽³⁾ Square Wave, V_IN-PP = 1 V, 10 kHz to 20 MHz		0.057	0.088
		f_OUT= 122.88 MHz,⁽²⁾⁽³⁾ Square Wave, V_IN-PP = 1 V, 1 kHz to 40 MHz		0.086	0.121
		f_OUT = 156.25 MHz,⁽³⁾⁽⁴⁾ Square Wave, V_IN-PP = 1 V, 12 kHz to 20 MHz		0.048	0.071
		f_OUT = 156.25 MHz,⁽³⁾⁽⁴⁾ Square Wave, V_IN-PP = 1 V, 10 kHz to 20 MHz		0.048	0.071
		f_OUT = 156.25 MHz,⁽³⁾⁽⁴⁾ Square Wave, V_IN-PP = 1 V, 1 kHz to 40 MHz		0.068	0.097
		f_OUT = 312.5 MHz,⁽³⁾⁽⁵⁾ Square Wave, V_IN-PP = 1 V, 12 kHz to 20 MHz		0.030	0.048
		f_OUT = 312.5 MHz,⁽³⁾⁽⁵⁾ Square Wave, V_IN-PP = 1 V, 10 kHz to 20 MHz		0.030	0.048
		f_OUT = 312.5 MHz,⁽³⁾⁽⁵⁾ Square Wave, V_IN-PP = 1 V, 1 kHz to 40 MHz		0.045	0.068
t_R/t_F	Output rise/fall time	20% to 80%			200	ps
I_EE	Supply internal current	Outputs unterminated, T_A ≤ 85°C			110	mA
I_EE	Supply internal current	T_PCB ≤ 105°C			112	mA
I_EE	Output and internal supply current	All outputs terminated, 50 Ω to V_CC – 2 T_A ≤ 85°C			618	mA
I_EE	Output and internal supply current	T_PCB ≤ 105°C			675	mA

(1) Parameter is specified by characterization. Not tested in production.

(2) Input source: 122.88-MHz Rohde & Schwarz SMA100A Signal Generator.

(3) Input source RMS Jitter (t_{RJIT_IN}) and Total RMS Jitter (t_{RJIT_OUT}) measured using Agilent E5052 Phase Noise Analyzer. Buffer device random additive jitter computed as: t_RJIT = SQRT[(t_{RJIT_OUT})² - (t_RJIT_{_}_IN)²].

(4) Input source: 156.25-MHz Rohde & Schwarz SMA100A Signal Generator.

(5) Input source: 312.5-MHz Rohde & Schwarz SMA100A Signal Generator.

6.10 Timing Requirements, at V_CC = 3 V to 3.6 V

Refer to Figure 1 and Figure 2.

			MIN	NOM	MAX	UNIT
t_PD	Propagation delay	V_{IN, DIFF, PP} = 0.1 V			550	ps
t_PD	Propagation delay	V_{IN, DIFF, PP} = 0.3 V			550	ps
t_SK,PP	Part-to-part skew				150	ps
t_SK,O	Output skew				30	ps
t_SK,P	Pulse skew (with 50% duty cycle input)	Crossing-point-to-crossing-point distortion, f_OUT = 100 MHz	–50		50	ps
_RJIT	Random additive jitter (with 50% duty cycle input)⁽¹⁾	f_OUT = 100 MHz, V_IN,SE = V_CC, V_th = 1.65 V, 10 kHz to 20 MHz		0.101		ps, RMS
		f_OUT = 100 MHz, V_IN,SE = 0.9 V, V_th = 1.1 V, 10 kHz to 20 MHz		0.130
		f_OUT = 2 GHz, V_IN,DIFF,PP = 0.2 V, V_ICM = 1 V, 10 kHz to 20 MHz		0.069
		f _OUT = 100 MHz, V_IN,DIFF,PP = 0.15 V, V_ICM = 1 V, 10 kHz to 20 MHz		0.094
		f_OUT = 100 MHz, V_IN,DIFF,PP = 1 V, V_ICM = 1 V, 10 kHz to 20 MHz		0.094
		f_OUT = 122.88 MHz,⁽²⁾⁽³⁾ Square Wave, V_IN-PP = 1 V, 12 kHz to 20 MHz		0.057
		f_OUT = 122.88 MHz,⁽²⁾⁽³⁾ Square Wave, V_IN-PP = 1 V, 10 kHz to 20 MHz		0.057
		f_OUT= 122.88 MHz,⁽²⁾⁽³⁾ Square Wave, V_IN-PP = 1 V, 1 kHz to 40 MHz		0.086
		f_OUT = 156.25 MHz,⁽³⁾⁽⁴⁾ Square Wave, V_IN-PP = 1 V, 12 kHz to 20 MHz		0.048
		f_OUT = 156.25 MHz,⁽³⁾⁽⁴⁾ Square Wave, V_IN-PP = 1 V, 10 kHz to 20 MHz		0.048
		f_OUT = 156.25 MHz,⁽³⁾⁽⁴⁾ Square Wave, V_IN-PP = 1 V, 1 kHz to 40 MHz		0.068
		f_OUT = 312.5 MHz,⁽³⁾⁽⁵⁾ Square Wave, V_IN-PP = 1 V, 12 kHz to 20 MHz		0.030
		f_OUT = 312.5 MHz,⁽³⁾⁽⁵⁾ Square Wave, V_IN-PP = 1 V, 10 kHz to 20 MHz		0.030
		f_OUT = 312.5 MHz,⁽³⁾⁽⁵⁾ Square Wave, V_IN-PP = 1 V, 1 kHz to 40 MHz		0.045
t_R/t_F	Output rise/fall time	20% to 80%			200	ps

(1) Parameter is specified by characterization. Not tested in production.

(2) Input source: 122.88-MHz Rohde & Schwarz SMA100A Signal Generator.

(4) Input source: 156.25-MHz Rohde & Schwarz SMA100A Signal Generator.

(5) Input source: 312.5-MHz Rohde & Schwarz SMA100A Signal Generator.

6.11 Pin Characteristics

PARAMETER		MIN	TYP	MAX	UNIT
R_PULLDOWN	Input pulldown resistor		150		kΩ

Figure 1. Output Voltage and Rise/Fall Time

1. Output skew is calculated as the greater of the following: As the difference between the fastest and the slowest t_PLHn (n = 0, 1, 2....15), or as the difference between the fastest and the slowest t_PHLn (n = 0, 1, 2....15).

2. Part-to-part skew is calculated as the greater of the following: As the difference between the fastest and the slowest t_PLHn (n = 0, 1, 2....15) across multiple devices, or the difference between the fastest and the slowest t_PHLn (n = 0, 1, 2....15) across multiple devices.

Figure 2. Output and Part-to-Part Skew

6.12 Typical Characteristics

at T_A = –40°C to +85°C (unless otherwise noted)

CDCLVP1216 tc_fqcy_diff_vout_swing01_cas877.gif

Figure 3. Differential Output Peak-to-Peak Voltage vs Frequency

CDCLVP1216 tc_fqcy_diff_vout_swing02_cas877.gif

Figure 4. Differential Output Peak-to-Peak Voltage vs Frequency