ZHCSGR3C May 2017 – September 2021 BQ25606
PRODUCTION DATA
- 1 特性
- 2 應(yīng)用
- 3 說(shuō)明
- 4 Revision History
- 5 說(shuō)明（續(xù)）
- 6 Device Comparison Table
- 7 Pin Configuration and Functions
- 8 Specifications
-
9 Detailed Description
- 9.1 Overview
- 9.2 Functional Block Diagram
- 9.3
Feature Description
- 9.3.1 Device Power Up from Battery without Input Source
- 9.3.2 Power Up from Input Source
- 9.3.3 Boost Mode Operation From Battery
- 9.3.4 Power Path Management
- 9.3.5 Battery Charging Management
- 9.3.6 Status Outputs ( PG, STAT)
- 9.3.7 Protections
- 10Application and Implementation
- 11Power Supply Recommendations
- 12Layout
- 13Device and Documentation Support
- 14Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RGE|24
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RGE|24
訂購(gòu)信息
8.7 Typical Characteristics
| fSW = 1.5 MHz | Inductor DCR = 18 mΩ |
| VBAT = 3.8 V |
| 0 A ≤ IOTG ≤1.37 A | VOTG = 5.15 V |
| VVBAT = 3.8 V |
Figure 8-5 BATREG Charge Voltage vs. Junction Temperature
| VVBUS = 5 V | VBAT = 3.8 V |
| VVBUS = 5 V | VBAT = 3.8 V |
| VOTG = 5.15 V | inductor DCR = 18 mΩ |
Figure 8-4 SYSMIN Voltage vs. Junction Temperature
| VVBUS = 5 V |
| VVBUS = 5V | VBAT = 3.8V |
| VVBUS = 5 V | VBAT = 3.8 V |