SLUS893B March 2010 – June 2015
PRODUCTION DATA.
- 1 Features
- 2 Applications
- 3 Description
- 4 Revision History
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Specifications
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1 Battery Voltage Regulation
- 8.3.2 Battery Current Regulation
- 8.3.3 Precharge
- 8.3.4 Charge Termination, Recharge, and Safety Timer
- 8.3.5 Power Up
- 8.3.6 Enable and Disable Charging
- 8.3.7 Automatic Internal Soft-Start Charger Current
- 8.3.8 Converter Operation
- 8.3.9 Synchronous and Nonsynchronous Operation
- 8.3.10 Cycle-by-Cycle Charge Undercurrent
- 8.3.11 Input Overvoltage Protection (ACOV)
- 8.3.12 Input Undervoltage Lockout (UVLO)
- 8.3.13 Battery Overvoltage Protection
- 8.3.14 Cycle-by-Cycle Charge Overcurrent Protection
- 8.3.15 Thermal Shutdown Protection
- 8.3.16 Temperature Qualification
- 8.3.17 Timer Fault Recovery
- 8.3.18 PG Output
- 8.3.19 CE (Charge Enable)
- 8.3.20 Charge Status Outputs
- 8.3.21 Battery Detection
- 8.4 Device Functional Modes
- 9 Application and Implementation
- 10Power Supply Recommendations
- 11Layout
- 12Device and Documentation Support
- 13Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RVA|16
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RVA|16
訂購(gòu)信息
7 Specifications
7.1 Absolute Maximum Ratings(1)(2)(3)
over operating free-air temperature range (unless otherwise noted)| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Voltage | VCC, SRP, SRN, CE, STAT, PG | –0.3 | 33 | V |
| PH | –2 | 36 | ||
| VFB | –0.3 | 16 | ||
| REGN, LODRV, TS | –0.3 | 7 | ||
| BTST, HIDRV with respect to GND | –0.3 | 39 | ||
| VREF, ISET | –0.3 | 3.6 | ||
| Maximum difference voltage | SRP–SRN | –0.5 | 0.5 | V |
| Junction temperature, TJ | –40 | 155 | °C | |
| Storage temperature, Tstg | –55 | 155 | °C | |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to GND if not specified. Currents are positive into, negative out of the specified terminal. Consult the packaging section of the data book for thermal limitations and considerations of packages.
(3) Must have a series resistor between battery pack to VFB if battery pack voltage is expected to be greater than 16 V. Usually the resistor-divider top resistor takes care of this.
7.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
| Charged device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 | |||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
| MIN | NOM | MAX | UNIT | ||||
|---|---|---|---|---|---|---|---|
| Voltage | VCC, SRP, SRN, CE, STAT, PG | –0.3 | 28 | V | |||
| PH | –2 | 30 | |||||
| VFB | –0.3 | 14 | |||||
| REGN, LODRV, TS | –0.3 | 6.5 | |||||
| BTST, HIDRV with respect to GND | –0.3 | 34 | |||||
| ISET | –0.3 | 3.3 | |||||
| VREF | 3.3 | ||||||
| Maximum difference voltage | SRP–SRN | –0.2 | 0.2 | V | |||
| TJ | Junction temperature | 0 | 125 | °C | |||
| Tstg | Storage temperature | –55 | 155 | °C | |||
7.4 Thermal Information
| THERMAL METRIC(1) | bq24620 | UNIT | |
|---|---|---|---|
| RVA [VQFN] | |||
| 16 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 43.8 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 81 | °C/W |
| RθJB | Junction-to-board thermal resistance | 16 | °C/W |
| ψJT | Junction-to-top characterization parameter | 0.6 | °C/W |
| ψJB | Junction-to-board characterization parameter | 15.77 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | 4 | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.
7.5 Electrical Characteristics
5 V ≤ VVCC ≤ 28 V, 0°C < TJ< 125°C, typical values are at TA= 25°C, with respect to GND unless otherwise noted| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| OPERATING CONDITIONS | ||||||
| VVCC_OP | VCC input voltage operating range | 5 | 28 | V | ||
| QUIESCENT CURRENTS | ||||||
| IBAT | Total battery discharge current (sum of currents into VCC, BTST, PH, SRP, SRN, VFB), VFB ≤ 2.1 V | VVCC < VSRN, VVCC > VUVLO (SLEEP) | 15 | μA | ||
| IAC | Adapter supply current (current into VCC pin) | VVCC > VSRN, VVCC > VUVLO CE = LOW (IC quiescent current) | 1 | 1.5 | mA | |
| VVCC > VSRN, VVCC >VVCCLOW, CE = HIGH, charge done | 2 | 5 | ||||
| VVCC > VSRN, VVCC >VVCCLOW, CE = HIGH, Charging, Qg_total = 20 nC, VVCC = 20 V | 12 | |||||
| CHARGE VOLTAGE REGULATION | ||||||
| VFB | Feedback regulation voltage | 1.8 | V | |||
| Charge voltage regulation accuracy | TJ = 0°C to 85°C | –0.5% | 0.5% | |||
| TJ = –40°C to 125°C | –0.7% | 0.7% | ||||
| IVFB | Input leakage current into VFB pin | VFB = 1.8 V | 100 | nA | ||
| CURRENT REGULATION – FAST CHARGE | ||||||
| VISET | ISET voltage range | 0 | 2 | V | ||
| VIREG_CHG | SRP–SRN current-sense voltage range | VIREG_CHG = VSRP – VSRN | 0 | 100 | mV | |
| KISET | Charger current-set factor; amps of charge current per volt on ISET pin) | RSENSE = 10 mΩ | 5 | A/V | ||
| Charge current regulation accuracy | VIREG_CHG = 40 mV | –3% | 3% | |||
| VIREG_CHG = 20 mV | –4% | 4% | ||||
| VIREG_CHG = 5 mV | –25% | 25% | ||||
| VIREG_CHG = 1.5 mV (VSRN > 3.1 V) | –40% | 40% | ||||
| IISET | Leakage current in to ISET Pin | VISET = 2 V | 100 | nA | ||
| CURRENT REGULATION – PRECHARGE | ||||||
| Precharge current | RSENSE = 10 mΩ, VFB < VLOWV | 50 | 125 | 200 | mA | |
| CHARGE TERMINATION | ||||||
| Termination current range | RSENSE = 10 mΩ | ICHARGE/10 | A | |||
| KTERM | Termination current-set factor; amps of termination current per volt on ISET pin | 0.5 | A/V | |||
| Termination current accuracy | VITERM = 10 mV | –10% | 10% | |||
| VITERM = 5 mV | –25% | 25% | ||||
| VITERM = 1.5 mV | –45% | 45% | ||||
| Deglitch time for termination (both edge) | 100 | ms | ||||
| tQUAL | Termination qualification time | VBAT > VRECH and ICHARGE < ITERM | 250 | ms | ||
| IQUAL | Termination qualification time | Discharge current once termination is detected | 2 | mA | ||
| INPUT UNDERVOLTAGE LOCKOUT COMPARATOR (UVLO) | ||||||
| VUVLO | AC undervoltage rising threshold | Measure on VCC | 3.65 | 3.85 | 4 | V |
| VUVLO_HYS | AC undervoltage hysteresis, falling | 350 | mV | |||
| VCC LOWV COMPARATOR | ||||||
| Falling threshold, disable charge | Measure on VCC | 4.1 | V | |||
| Rising threshold, resume charge | 4.35 | 4.5 | V | |||
| SLEEP COMPARATOR (REVERSE DISCHARGING PROTECTION) | ||||||
| VSLEEP _FALL | SLEEP falling threshold | VVCC – VSRN to enter SLEEP | 40 | 100 | 150 | mV |
| VSLEEP_HYS | SLEEP hysteresis | 500 | mV | |||
| SLEEP rising delay | VCC falling below SRN, delay to pull up PG | 1 | µs | |||
| SLEEP falling delay | VCC rising above SRN, delay to pull down PG | 30 | ms | |||
| SLEEP rising shutdown deglitch | VCC falling below SRN, Delay to enter SLEEP mode | 100 | ms | |||
| SLEEP falling powerup deglitch | VCC rising above SRN, Delay to come out of SLEEP mode | 30 | ms | |||
| BAT LOWV COMPARATOR | ||||||
| VLOWV | LOWV rising threshold (precharge to fast charge) | Measured on VFB pin | 0.333 | 0.35 | 0.367 | V |
| VLOWV_HYS | LOWV hysteresis | 100 | mV | |||
| LOWV rising deglitch | VFB falling below VLOWV | 25 | ms | |||
| LOWV falling deglitch | VFB rising above VLOWV + VLOWV_HYS | 25 | ms | |||
| RECHARGE COMPARATOR | ||||||
| VRECHG | Recharge threshold (with respect to VREG) | Measured on VFB pin | 110 | 125 | 140 | mV |
| Recharge rising deglitch | VFB decreasing below VRECHG | 10 | ms | |||
| Recharge falling deglitch | VFB increasing above VRECHG | 10 | ms | |||
| BAT OVERVOLTAGE COMPARATOR | ||||||
| VOV_RISE | Overvoltage rising threshold | As percentage of VFB | 108% | |||
| VOV_FALL | Overvoltage falling threshold | As percentage of VFB | 105% | |||
| INPUT OVERVOLTAGE COMPARATOR (ACOV) | ||||||
| VACOV | AC overvoltage rising threshold on VCC | 31.04 | 32 | 32.96 | V | |
| VACOV_HYS | AC overvoltage falling hysteresis | 1000 | mV | |||
| AC overvoltage rising deglitch | Delay to changing the STAT pins | 1 | ms | |||
| AC overvoltage falling deglitch | Delay to changing the STAT pins | 1 | ms | |||
| THERMAL SHUTDOWN COMPARATOR | ||||||
| TSHUT | Thermal shutdown rising temperature | Temperature increasing | 145 | °C | ||
| TSHUT_HYS | Thermal shutdown hysteresis | 15 | °C | |||
| Thermal shutdown rising deglitch | Temperature increasing | 100 | μs | |||
| Thermal shutdown falling deglitch | Temperature decreasing | 10 | ms | |||
| THERMISTOR COMPARATOR | ||||||
| VLTF | Cold temperature rising threshold | Charger suspended below this temperature | 72.5% | 73.5% | 74.5% | |
| VLTF_HYS | Cold temperature hysteresis | 0.2% | 0.4% | 0.6% | ||
| VCOOL | Cool temperature rising threshold | Charger enabled, cuts back to ICHARGE/8 below this temperature | 70.2% | 70.7% | 71.2% | |
| VCOOL_HYS | Cool temperature hysteresis | 0.2% | 0.6% | 1.0% | ||
| VWARM | Warm temperature rising threshold | Charger cuts back to ICHARGE/8 above this temperature | 47.5% | 48% | 48.5% | |
| VWARM_HYS | Warm temperature hysteresis | 1.0% | 1.2% | 1.4% | ||
| VHTF | Hot temperature rising threshold | Charger suspended above this temperature before initiating charge | 36.2% | 37% | 37.8% | |
| VTCO | Cutoff temperature rising threshold | Charger suspended above this temperature during initiating charge | 33.7% | 34.4% | 35.1% | |
| Deglitch time for temperature out-of-range detection | VTS > VLTF, or VTS < VTCO, or VTS < VHTF | 400 | ms | |||
| Deglitch time for temperature in-valid-range detection | VTS < VLTF – VLTF_HYS or VTS >VTCO, or VTS > VHTF | 20 | ms | |||
| Deglitch time for current reduction to ICHARGE/8 due to warm or cool temperature | VTS > VCOOL, or VTS < VWARM | 25 | ms | |||
| Deglitch time to charge at ICHARGE from ICHARGE/8 when resuming from warm or cool temperatures | VTS < VCOOL - VCOOL_HYS, or VTS > VWARM - VWARM_HYS | 25 | ms | |||
| Charge current due to warm or cool temperatures | VCOOL < VTS < VLTF, or VWARM < VTS < VHTF, or VWARM < VTS < VTCO | ICHARGE/8 | ||||
| CHARGE OVERCURRENT COMPARATOR (CYCLE-BY-CYCLE) | ||||||
| VOC | Charge overcurrent, falling threshold | Current rising, in nonsynchronous mode, measure on V(SRP-SRN), VSRP < 2 V | 45.5 | mV | ||
| Current rising, as percentage of V(IREG_CHG), in synchronous mode, VSRP > 2.2 V | 160% | |||||
| Charge overcurrent, threshold floor | Minimum OCP threshold in synchronous mode, measure on V(SRP-SRN), VSRP > 2.2 V | 50 | mV | |||
| Charge overcurrent, threshold ceiling | Maximum OCP threshold in synchronous mode, measure on V(SRP-SRN), VSRP > 2.2 V | 180 | mV | |||
| CHARGE UNDERCURRENT COMPARATOR (CYCLE-BY-CYCLE) | ||||||
| VISYNSET | Charge undercurrent, falling threshold | Switch from STNCH to NON-SYNCH, VSSP > 2.2 V | 1 | 5 | 9 | mV |
| BATTERY SHORTED COMPARATOR (BATSHORT) | ||||||
| VBATSHT | BAT short falling threshold, forced non-syn mode | VSRP falling | 2 | V | ||
| VBATSHT_HYS | BAT short rising hysteresis | 200 | mV | |||
| VBATSHT_DEG | Deglitch on both edges | 1 | μs | |||
| LOW CHARGE CURRENT COMPARATOR | ||||||
| VLC | Average low charge current, falling threshold | Measure on V(SRP-SRN), forced into nonsynchronous mode | 1.25 | mV | ||
| VLC_HYS | Low charge current, rising hysteresis | 1.25 | mV | |||
| VLC_DEG | Deglitch on both edges | 1 | μs | |||
| VREF REGULATOR | ||||||
| VVREF_REG | VREF regulator voltage | VVCC > VUVLO (0 – 35 mA Load) | 3.267 | 3.3 | 3.333 | V |
| IVREF_LIM | VREF current limit | VVREF = 0 V, VVCC > VUVLO | 35 | mA | ||
| REGN REGULATOR | ||||||
| VREGN_REG | REGN regulator voltage | VVCC > 10 V, CE = HIGH (0 – 40 mA Load) | 5.7 | 6 | 6.3 | V |
| IREGN_LIM | REGN current limit | VREGN = 0 V, VVCC > VUVLO | 40 | mA | ||
| SAFETY TIMER | ||||||
| TPRECHG | Precharge safety timer range(1) | Precharge time before fault occurs | 1440 | 1800 | 2160 | s |
| TCHARGE | Internal fast-charge safety timer(1) | 4.25 | 5 | 5.75 | Hr | |
| BATTERY DETECTION | ||||||
| tWAKE | Wake timer | Max time charge is enabled | 500 | ms | ||
| IWAKE | Wake current | RSENSE = 10 mΩ | 50 | 125 | 200 | mA |
| tDISCHARGE | Discharge timer | Max time discharge current is applied | 1 | s | ||
| IDISCHARGE | Discharge current | 8 | mA | |||
| IFAULT | Fault current after a time-out fault | 2 | mA | |||
| VWAKE | Wake threshold (relative to VREG) | Voltage on VFB to detect battery absent during wake | 125 | mV | ||
| VDISCH | Discharge threshold | Voltage on VFB to detect battery absent during discharge | 0.35 | V | ||
| PWM HIGH-SIDE DRIVER (HIDRV) | ||||||
| RDS_HI_ON | High-side driver (HSD) turnon resistance | VBTST – VPH = 5.5 V | 3.3 | 6 | Ω | |
| RDS_HI_OFF | High-side driver turnoff resistance | VBTST – VPH = 5.5 V | 1 | 1.3 | Ω | |
| VBTST_REFRESH | Bootstrap refresh comparator threshold voltage | VBTST – VPH when low-side refresh pulse is requested | 4 | 4.2 | V | |
| PWM LOW-SIDE DRIVER (LODRV) | ||||||
| RDS_LO_ON | Low-side driver (LSD) turnon resistance | 4.1 | 7 | Ω | ||
| RDS_LO_OFF | Low-side driver turnoff resistance | 1 | 1.4 | Ω | ||
| PWM DRIVERS TIMING | ||||||
| Driver dead time | Dead time when switching between LSD and HSD, no load at LSD and HSD | 30 | ns | |||
| PWM OSCILLATOR | ||||||
| VRAMP_HEIGHT | PWM ramp height | As percentage of VCC | 7% | |||
| PWM switching frequency(1) | 255 | 300 | 345 | kHz | ||
| INTERNAL SOFT START (Eight Steps to Regulation Current ICHARGE) | ||||||
| Soft-start steps | 8 | step | ||||
| Soft-start step time | 1.6 | ms | ||||
| CHARGER SECTION POWER-UP SEQUENCING | ||||||
| Charge-enable delay after power up | Delay from when CE = 1 to when the charger is allowed to turn on | 1.5 | s | |||
| LOGIC I/O PIN CHARACTERISTICS | ||||||
| VIN_LO | CE input-low threshold voltage | 0.8 | V | |||
| VIN_HI | CE input-high threshold voltage | 2.1 | V | |||
| VBIAS_CE | CE input bias current | V = 3.3 V (CE has internal 1-MΩ pulldown resistor) | 6 | μA | ||
| VOUT_LO | STAT, PG output-low saturation voltage | Sink current = 5 mA | 0.5 | V | ||
| IOUT_HI | Leakage current | V = 32 V | 1.2 | µA | ||
(1) Verified by design.
7.6 Typical Characteristics
Table 1. Table Of Graphs
| FIGURE | ||
|---|---|---|
| REF, REGN, and PG Power Up (CE = 1) | Figure 1 | |
| Charge Enable | Figure 2 | |
| Current Soft Start (CE = 1) | Figure 3 | |
| Charge Disable | Figure 4 | |
| Continuous Conduction Mode Switching Waveforms | Figure 5 | |
| Cycle-by-Cycle Synchronous to Nonsynchronous | Figure 6 | |
| Battery Insertion | Figure 7 | |
| Battery-to-Ground Short Protection | Figure 8 | |
| Efficiency vs Output Current | Figure 9 | |
Figure 1. REF, REGN, and PG Power Up (CE = 1)
Figure 3. Current Soft Start (CE = 1)
Figure 5. Continuous Conduction Mode Switching Waveform
Figure 7. Battery Insertion
Figure 9. Efficiency vs Output Current
Figure 2. Charge Enable
Figure 4. Charge Disable
Figure 6. Cycle-by-Cycle Synchronous to Nonsynchronous
Figure 8. Battery-to-GND Short Protection