OBSSCircuit DescriptionV1.1010/02/94 20:07 CET.Component & analysis parameters of a circuit.TINA 9.3.50.340 SFB(c) Copyright 1993,94,95,96 DesignSoft Inc. All rights reserved.; $Circuit$w?1@1 Arial!REF2041 TINA-TI Reference DesignSymbol????333333?? F4@F4 Arial YNote that the model behavior is only correct when VIN is within the rated specificationsSymbol????333333??;T_07A067C020140611093800;T_07704A0020140611093800;phphT_07704DC020140611093800;T_0770518020140611093800?T_0770554020140611093800;T_0770590020140611093800;T_07705CC020140611093800;T_0770608020140611093800;  T_0770644020140611093800;T_0770680020140611093800;  T_07706BC020140611093800;T_07706F8020140611093800;xxxxT_077089C020140611093800?```T_0770824020140611093800?T_07707E8020140611093800;8x8xT_07707AC020140611093800?xh`xx`h`T_0770770020140611093800CppT_0770734020140611093800?@8@88T_0836AEC020140611131920DB V1T_07A15E8020140611093800Battery_9V_V (V)@BsVBIAST_07A158A020140611093800 NOPCB (VF)BrVREFT_07A152C020140611093800 NOPCB (VF) BC1T_07A14CE020140611093800CP_CYL300_D700_L1400 (C) h㈵>@eAY@? B C2T_07A1470020140611093800CP_CYL300_D700_L1400 (C) h㈵>@eAY@?#BrAM1T_07A1412020140611093800 Amet (AM)#BrpAM2T_07A13B4020140611093800 Amet (AM)#BrpAM3T_07A1356020140611093800 Amet (AM)BIS1T_07A12F8020140611093800 NOPCB (IS){Gz?.AB IS2T_07A129A020140611093800 NOPCB (IS){Gz?.A BxC3T_07A123C020140611093800CP_CYL300_D700_L1400 (C) Iz>@eAY@?:B> 0U1T_07A16A4020140611093827 REF2041REF20XX4C:\Users\Eperjesi Istvn\AppData\Local\Temp\REF2025SCK#REF20XXLabelKK=I^^d*VBIAS0 @d*GNDD0 @d*ENIASE00 @d*VIND0H0 @d*VREF]E/0H @3h 000g"- Courier New?g"+ Courier New?f <eHddeddedde dde dde dde dde ddeddeddeddg$ ReferenceArial"?eH<Hddg"VoltageArial-?eddedde dde ddeddeddedde" dde"$dde dde  dde dde dde& $dde& (ddeddeddeddeddeddeddeddeddedde<dde0<0dde0ddedde<G<dde(0dde00dde0<dde//dd6txf@6txf@J* REF20XX (PSpice format)N*****************************************************************************O* (C) Copyright 2014 Texas Instruments Incorporated. All rights reserved. N*****************************************************************************N** This model is designed as an aid for customers of Texas Instruments. N** TI and its licensors and suppliers make no warranties, either expressed N** or implied, with respect to this model, including the warranties of M** merchantability or fitness for a particular purpose. The model is M** provided solely on an "as is" basis. The entire risk as to its quality L** and performance is with the customer O***************************************************************************** A* Released by: Analog eLab Design Center, Texas Instruments Inc.Y* Part: REF20xx Low-Drift, Low-Power, Dual-Output, VREF and VREF / 2 Voltage Reference * Date: 2014-06-10* Model Type: TINA, PSpice* Simulator: TINA-TI, PSpice9* Simulator Version: TINA 9.3.50.40 SF-TI, PSpice 16.3.0* Datasheet: SBOS600-MAY 2014*N****************************************************************************** version 1.2:O***************************************************************************** *$*PRODUCT VREF VBIAS*REF2025 2.5V 1.25V*REF2030 3.0V 1.5V*REF2033 3.3V 1.65V*REF2041 4.096V 2.048V&.SUBCKT REF2041 VBIAS GND EN VIN VREF4X1 VBIAS GND EN VIN VREF REF20XX PARAMS: VOUT=4.096.ENDS7.SUBCKT REF20XX VBIAS GND EN VIN VREF PARAMS: VOUT=2.5VPSref 19 GND 5"VS2 GND 21 600.063316767M"VS1 20 GND 600.063316767MXU4 GND V1_25 RES+ PARAMS: ERR=4M ERR_TC=1.5%XU6 GND VBIAS Neg_13 GAINSET(+ PARAMS: GERR=0 GERR_TC=0 VOUT={VOUT} &XU5 GND VREF Neg_15 GAINSET_1)+ PARAMS: GERR=1M GERR_TC=1 VOUT={VOUT} IXU1 Neg_13 Bias VIN POROi GND Vt0p Vt0 VnR Plus_16 Veps Vn VBIAS Output HXU2 Neg_15 Bias VIN POROi GND Vt0p Vt0 VnR Plus_17 Veps Vn VREF Output R11ops 18 GND 9.998K $L1ops 18 GND 15.9139026006U R1ops Veps 18 1 "G1ops GND Veps 19 VIN 3.6MCdin1 EN GND 3P Rdin1 EN GND 50MEG XD5 EN VIN D_D2XD4 GND EN D_D2XD3 VREF VIN D_D2XD2 GND VREF D_D2XD11 VBIAS VIN D_D2XD1 GND VBIAS D_D2C1 V1_25 GND 1P V(55,GND2),1M,0)}&Rb3 Bias GND2 1K TC=1.735482MR3 57 GND2 10MEG R2 VDD2 56 10MEG Rsp1 VDD2 VT1 8K !GIb1 59 57 Bias GND2 10URpsrr1 59 57 100MEG .ENDS.SUBCKT D_D2 1 2 D1 1 2 D2.ENDS,.SUBCKT RES 1 2 PARAMS: ERR=0.0 ERR_TC=0.0.PARAM R_ = 1.PARAM VREF = 1.25.PARAM R_ERR = {ERR*0.01}.PARAM R_TC = {ERR_TC*1E-6}.PARAM R_1 = {(1+R_ERR)*R_}R1 1 2 RMOD1 {R_1}5*.MODEL RMOD1 RES (TC1={R_TC} TC2={-15M*R_TC} TCE=0)3.MODEL RMOD1 RES (TC1={R_TC} TC2={-5M*R_TC} TCE=0).ENDS=.SUBCKT GAINSET 1 2 3 PARAMS: VOUT=2.5 GERR=0.0 GERR_TC=0.0.PARAM RG = 1000K.PARAM VREF = 1.25.PARAM G = {0.5*VOUT/VREF}.PARAM G_ERR = {GERR*0.01}.PARAM G_TC = {GERR_TC*1E-6}.PARAM RG_TC = {1.0*G_TC}.PARAM RG1 = {(1-G_ERR)*RG}%.PARAM RG2 = {(1+G_ERR)*RG*(G-1)+1U}R1 1 3 RMOD1 {RG1}R2 3 2 RMOD2 {RG2}6.MODEL RMOD1 RES (TC1={-RG_TC} TC2={-0M*RG_TC} TCE=0)'.MODEL RMOD2 RES (TC1={0} TC2=0 TCE=0).ENDS?.SUBCKT GAINSET_1 1 2 3 PARAMS: VOUT=2.5 GERR=0.0 GERR_TC=0.0.PARAM RG = 1000K.PARAM VREF = 1.25.PARAM G = {VOUT/VREF}.PARAM G_ERR = {GERR*0.01}.PARAM G_TC = {GERR_TC*1E-6}.PARAM RG_TC = {1.0*G_TC}.PARAM RG1 = {(1-G_ERR)*RG}%.PARAM RG2 = {(1+G_ERR)*RG*(G-1)+1U}R1 1 3 RMOD1 {RG1}R2 3 2 RMOD2 {RG2}6.MODEL RMOD1 RES (TC1={-RG_TC} TC2={-0M*RG_TC} TCE=0)'.MODEL RMOD2 RES (TC1={0} TC2=0 TCE=0).ENDS.SUBCKT D_DNOISE 1 2 D1 1 2 DD2.MODEL DD D( IS=0.9E-18 N=1.0 AF=1 KF=3.3814E-18).ENDS.SUBCKT D_LIM1 1 2D1 1 2 D_LIM1.ENDSA.SUBCKT Q_PMOS_OUT_L1 D G S B PARAMS: M = 1 W = 100U L = 10UbM1 D G S B Q_PMOS_OUT_L1 W = {W} L = {L} M = {M} AD={W*LS} AS={W*LS} PD={W + 2*LS} PS={W + 2*LS} `*M1 D G S B Q_PMOS_OUT W = {W} L = {L} M = {M} AD={W*LS} AS={W*LS} PD={W + 2*LS} PS={W + 2*LS} + NRD={LS/W} NRS={LS/W}.ENDS@.SUBCKT Q_NMOS_OUT_L1 D G S B PARAMS: M = 1 W = 100U L = 10UcM1 D G S B Q_NMOS_OUT_L1 W = {W} L = {L} M = {M} AD={W*LS} AS={W*LS} PD={W + 2*LS} PS={W + 2*LS} a*M1 D G S B Q_NMOS_OUT W = {W} L = {L} M = {M} AD={W*LS} AS={W*LS} PD={W + 2*LS} PS={W + 2*LS} + NRD={LS/W} NRS={LS/W}.ENDSB.SUBCKT Q_NMOS_OUT_L1_1 D G S B PARAMS: M = 1 W = 100U L = 10UcM1 D G S B Q_NMOS_OUT_L1 W = {W} L = {L} M = {M} AD={W*LS} AS={W*LS} PD={W + 2*LS} PS={W + 2*LS} + NRD={LS/W} NRS={LS/W}_.MODEL Q_NMOS_OUT_L1 NMOS LEVEL=1 L={L} W={W} KP={KPN} VTO={VTOHN} LAMBDA={25M} GAMMA={GAMMA} .ENDS*PARAMETERS: 0.4UM CMOS.PARAM LS = 1.0U.PARAM VTOHP = 0.70.PARAM VTOHN = 0.70.PARAM LAMBDA = 25M.PARAM LAMBDAP = 25M.PARAM LAMBDAN = 25M.PARAM GAMMA = 0.0.PARAM KAPPA = 1.0.PARAM THETA = 0.1.PARAM ETA = 0.05.PARAM PHI = 0.6'.PARAM EPSSIO2 = {3.9*8.854214871E-12}.PARAM TOX = 80E-10.PARAM COX = {EPSSIO2/TOX}.PARAM KPN = {UON*COX * 1E-4}.PARAM KPP = {UOP*COX * 1E-4}.PARAM LDN = 0.09U.PARAM LDP = 0.09U.PARAM RSW = 1810.PARAM RSN = 1.41.PARAM RSH = 4.0.PARAM RDS = 100.0MEG.PARAM VBMUL = 1E6.PARAM RPAR = 1T.PARAM CBDJ = 1.0 .PARAM CBDS = 1.0.PARAM CGBF = 1.0.PARAM PBP = 0.7.PARAM PBN = 0.7.PARAM UON = 900.PARAM UOP = 900.PARAM CNM = 0.5 .PARAM CPM = 0.5.PARAM CJN = {CNM*200U}.PARAM CJP = {CPM*400U} .PARAM CJSWN = {CNM*1.2N}.PARAM CJSWP = {CPM*2.4N}.PARAM XJN = 0.15U".PARAM CGSON = {CNM*0.6*XJN*COX} .PARAM CGDON = {CNM*CGSON} .PARAM CGBON = {CNM*CGBF*CGDON}.PARAM XJP = 0.18U".PARAM CGSOP = {CPM*0.6*XJP*COX} .PARAM CGDOP = {CPM*CGSOP} .PARAM CGBOP = {CPM*CGBF*CGDOP}*$9.MODEL SW1 VSWITCH RON=10 ROFF=1E12 VON=0.6V VOFF=0.4V *$;.MODEL SW2 VSWITCH RON=100m ROFF=1E12 VON=0.6V VOFF=0.4V *$=.MODEL SW2IC VSWITCH RON=100m ROFF=1E12 VON=0.4V VOFF=0.6V *$F.MODEL Q_NMOS NMOS LEVEL=1 L=2U W=10U KP={KPN} VTO={VTOHN} AF=0 KF=0*$G.MODEL Q_PMOS PMOS LEVEL=1 L=2U W=10U KP={KPP} VTO={-VTOHP} AF=0 KF=0*$d.MODEL Q_NMOS_OUT_L1 NMOS LEVEL=1 L=10U W=100U KP={KPN} VTO={VTOHN} LAMBDA={LAMBDAN} GAMMA={GAMMA} p+ CJ={CJN} CJSW={CJSWN} CGSO={CGSON} CGDO={CGDON} RSH={RSH} PB={PBN} LD= {LDN} RDS={RDS} PHI={PHI} AF=0 KF=0.0A*+ RSH={RSH} PB={PBN} LD= {LDN} RDS={RDS} PHI={PHI} AF=0 KF=0.0*$A.MODEL Q_NMOS_OUT NMOS LEVEL=3 L=10U W=100U KP={KPN} VTO={VTOHN}l+ CJ={CJN} CJSW={CJSWN} CGSO={CGSON} CGDO={CGDON} RSH={RSH} PB={PBN} LD= {LDN} RDS={RDS} TOX={TOX} XJ={XJN}M*+ THETA={THETA} GAMMA={GAMMA} KAPPA={KAPPA} ETA={ETA} PHI={PHI} AF=0 KF=0L+ THETA={THETA} GAMMA={GAMMA} KAPPA={KAPPA} ETA={ETA} PHI={PHI} AF=0 KF=0*$e.MODEL Q_PMOS_OUT_L1 PMOS LEVEL=1 L=10U W=100U KP={KPP} VTO={-VTOHP} LAMBDA={LAMBDAP} GAMMA={GAMMA} p+ CJ={CJP} CJSW={CJSWP} CGSO={CGSOP} CGDO={CGDOP} RSH={RSH} PB={PBP} LD= {LDP} RDS={RDS} PHI={PHI} AF=0 KF=0.0A*+ RSH={RSH} PB={PBP} LD= {LDP} RDS={RDS} PHI={PHI} AF=0 KF=0.0*$B.MODEL Q_PMOS_OUT PMOS LEVEL=3 L=10U W=100U KP={KPP} VTO={-VTOHP}l+ CJ={CJP} CJSW={CJSWP} CGSO={CGSOP} CGDO={CGDOP} RSH={RSH} PB={PBP} LD= {LDP} RDS={RDS} TOX={TOX} XJ={XJP}M*+ THETA={THETA} GAMMA={GAMMA} KAPPA={KAPPA} ETA={ETA} PHI={PHI} AF=0 KF=0L+ THETA={THETA} GAMMA={GAMMA} KAPPA={KAPPA} ETA={ETA} PHI={PHI} AF=0 KF=0*$=.MODEL D_LIM0 D( IS=10F N=10.0 RS=1 XTI=0 AF=0 KF=0 EG=1.11)*$>.MODEL D_LIM1 D( IS=10F N=1.0 RS=100 XTI=0 AF=0 KF=0 EG=0.48)*$>*.MODEL D_LIM1 D( IS=10F N=1.0 RS=10 XTI=0 AF=0 KF=0 EG=1.11)?.MODEL D_LIM1T D( IS=10F N=1.0 RS=10 XTI=0 AF=0 KF=0 EG=0.555)*$?.MODEL D_LIM01 D( IS=10F N=0.1 RS=10 XTI=0 AF=0 KF=0 EG=0.111)*$>.MODEL D_LIM2 D( IS=10F N=0.5 RS=1 XTI=0 AF=0 KF=0 EG=0.555 )*$6.MODEL D_LIM3 D( IS=1E-18 N=1.0 RS=1 XTI=0 AF=0 KF=0)*$0.MODEL D1 D( IS=1P N=1.0 RS=0 XTI=3 AF=0 KF=0 )*$C.MODEL D_2V D( IS=10F N=1.0 BV=2.0 IBV=10.0U RS=10 XTI=0 EG=1.11 )*$C.MODEL D_Z5V D( IS=1P N=1.0 BV=5.0 IBV=10.0U RS=10 XTI=0 EG=0.48 )*$'.MODEL D2 D( IS=1P N=1.0 XTI=0 RS=10 )*$GNDENVREFVBIASAVDDBf@T_07A11DE020140611093800 NOPCB (GND)BfT_07A1180020140611093800 NOPCB (GND)BfT_07A1122020140611093800 NOPCB (GND)BfT_07A10C4020140611093800 NOPCB (GND)BfHT_07A1066020140611093800 NOPCB (GND)BfxT_07A1646020140611093800 NOPCB (GND)BfHT_07955A8020140611131724 NOPCB (GND)8?o-_@8@MbP??ư>'dd?Y@[dddd$@?.A.A.AeAMbP?@@?ư>ư> $ 4@D@ =B?& .>??ư>ư>ư>ư>ư>ư>?I@?I@?I@& .>#i;@& .>-q=ư>MbP?-q=MbP?vIh%<=@@D@& .>?MbP?4@?{Gz?ꌠ9Y>)F@?+= _BKH9$@Y@& .>ư>?.AMbP??????I@Default analysis parameters. These parameters establish convergence and sufficient accuracy for most circuits. In case of convergence or accuracy problems click on the "hand " button to Open other parameter sets.?Xd I@nMbP?{Gz?{Gz?MbP????|=Hz>}Ô%ITNoname