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ZHCS907A May 2012 – December 2014 UCC27518 , UCC27519

PRODUCTION DATA.

封裝選項

機(jī)械數(shù)據(jù) (封裝 | 引腳)

DBV|5
- MPDS018T

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購信息

8 Specifications

8.1 Absolute Maximum Ratings⁽¹⁾⁽²⁾⁽³⁾

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
Supply voltage	VDD	–0.3	20	V
OUT voltage		–0.3	VDD + 0.3	V
Output continuous current	I_{OUT_DC}(source/sink)		0.3	A
Output pulsed current (0.5 µs)	I_{OUT_pulsed}(source/sink)		4
IN+, IN-⁽⁴⁾, EN		–0.3	20	V
Operating virtual junction temperature, T_J		–40	150	°C
Lead temperature	Soldering, 10 sec.		300
Lead temperature	Reflow		260
Storage temperature, T_stg		–65	150

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltages are with respect to GND unless otherwise noted. Currents are positive into, negative out of the specified terminal. See Packaging Section of the data sheet for thermal limitations and considerations of packages.

(3) These devices are sensitive to electrostatic discharge; follow proper device handling procedures.

(4) Maximum voltage on input pins is not restricted by the voltage on the VDD pin.

8.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±4000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

8.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

	MIN	NOM	MAX	UNIT
Supply voltage range, VDD	4.5	12	18	V
Operating junction temperature range	–40		140	°C
Input voltage, (IN+ and IN–) and Enable (EN)	0		18	V

8.4 Thermal Information

THERMAL METRIC		UCC27518	UCC27519	UNIT
		SOT-23 DBV	SOT-23 DBV⁽¹⁾
		5 PINS	5 PINS
R_θJA	Junction-to-ambient thermal resistance⁽¹⁾	217.6	217.6	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance⁽¹⁾	85.8	85.8
R_θJB	Junction-to-board thermal resistance⁽¹⁾	44.0	44.0
ψ_JT	Junction-to-top characterization parameter⁽¹⁾	4.0	4.0
ψ_JB	Junction-to-board characterization parameter⁽¹⁾	43.2	43.2

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

8.5 Electrical Characteristics

VDD = 12 V, T_A = T_J = -40 °C to 140 °C, 1-µF capacitor from VDD to GND. Currents are positive into, negative out of the specified terminal.

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
BIAS CURRENTS
I_DD(off)	Startup current	VDD = 3.4 V	IN+ = VDD (UCC27519), IN- = GND (UCC27518)	51	85	123	µA
I_DD(off)	Startup current	VDD = 3.4 V	IN+ = GND (UCC27519), IN- = VDD (UCC27518)	51	70	103	µA
UNDERVOLTAGE LOCKOUT (UVLO)
V_ON	Supply start threshold	T_A = 25 °C		3.85	4.20	4.57	V
V_ON	Supply start threshold	T_A = -40 °C to 140°C		3.80	4.20	4.67
V_OFF	Minimum operating voltage after supply start			3.45	3.9	4.35
V_{DD_H}	Supply voltage hysteresis			0.19	0.3	0.45
INPUTS (IN+, IN–)
V_{IN_H}	Input signal high threshold	VDD = 4.5 V			55	62	%VDD
V_{IN_L}	Input signal low threshold			31	39
V_{IN_HYS}	Input signal hysteresis				16
V_{IN_H}	Input signal high threshold	VDD = 12 V			55	59
V_{IN_L}	Input signal low threshold			31	39
V_{IN_HYS}	Input signal hysteresis				16
V_{IN_H}	Input signal high threshold	VDD = 18 V			55	58
V_{IN_L}	Input signal low threshold			35	38
V_{IN_HYS}	Input signal hysteresis				17
ENABLE (EN)
V_{EN_H}	Enable signal high threshold	VDD = 12 V			2.1	2.3	V
V_{EN_L}	Enable signal low threshold			1.00	1.25
V_{EN_HYS}	Enable hysteresis				0.86
SOURCE/SINK CURRENT
I_SRC/SNK	Source/sink peak current⁽¹⁾	C_LOAD = 0.22 µF, F_SW = 1 kHz			-4/+4		A
OUTPUTS (OUT)
V_DD-V_OH	High output voltage	VDD = 12 V I_OUT = -10 mA			50	90	mV
V_DD-V_OH	High output voltage	VDD = 4.5 V I_OUT = -10 mA			60	130
V_OL	Low output voltage	VDD = 12 I_OUT = 10 mA			5	11
V_OL	Low output voltage	VDD = 4.5 V I_OUT = 10 mA			6	12
R_OH	Output pullup resistance⁽²⁾	VDD = 12 V I_OUT = -10 mA			5.0	7.5	Ω
R_OH	Output pullup resistance⁽²⁾	VDD = 4.5 V I_OUT = -10 mA			5.0	11.0
R_OL	Output pulldown resistance	VDD = 12 V I_OUT = 10 mA			0.5	1.0
R_OL	Output pulldown resistance	VDD = 4.5 V I_OUT = 10 mA			0.6	1.2

(1) Ensured by Design.

(2) R_OH represents on-resistance of P-Channel MOSFET in pullup structure of the UCC27518 and UCC27519's output stage.

8.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
t_R	Rise time⁽¹⁾	C_LOAD = 1.8 nF		8	12	ns
t_F	Fall time⁽¹⁾	C_LOAD = 1.8 nF		7	11
t_D1	IN+ to output propagation delay⁽¹⁾	VDD = 10 V 7-V input pulse, C_LOAD = 1.8 nF	6	17	25
t_D2	IN- to output propagation delay⁽¹⁾	VDD = 10 V 7-V input pulse, C_LOAD = 1.8 nF	6	17	24
t_D3	EN to output high propagation delay⁽¹⁾	C_LOAD = 1.8 nF, 5-V enable pulse	4	12	16
t_D4	EN to output low propagation delay⁽¹⁾	C_LOAD = 1.8 nF, 5-V enable pulse	4	12	19