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SBVS340 June 2017 TPS715A-NM

PRODUCTION DATA.

封裝選項

5 Specifications

5.1 Absolute Maximum Ratings

over operating temperature range (unless otherwise noted)⁽¹⁾

	MIN	MAX	UNIT
Input supply voltage, V_IN	–0.3	24	V
Peak output current	Internally limited
Continuous total power dissipation	See Thermal Information
Junction temperature, T_J	–40	125	°C
Storage temperature, T_stg	–65	150	°C

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

5.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

5.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
V_IN	Input supply voltage	2.5		24	V
I_OUT	Output current	0		80	mA
C_IN	Input capacitor	0	0.047		µF
C_OUT	Output capacitor	0.47	1		µF

5.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS715A-NM		UNIT
		DRV (SON)	DRB (SON)
		6 PINS	8 PINS
R_θJA	Junction-to-ambient thermal resistance	79.5	69	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	110.5	76.8	°C/W
R_θJB	Junction-to-board thermal resistance	48.9	44.6	°C/W
ψ_JT	Junction-to-top characterization parameter	5.2	8.1	°C/W
ψ_JB	Junction-to-board characterization parameter	49.3	44.8	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	18.3	27.5	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

5.5 Electrical Characteristics

Over operating junction temperature range (T_J = –40°C to 125°C), V_IN = V_OUT(NOM) + 1 V, I_OUT = 1 mA, C_OUT = 1 μF, unless otherwise noted. The TPS715A01 device is tested with V_OUT = 2.8 V. Typical values are at T_J = 25°C.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
Input voltage⁽¹⁾	V_IN	I_OUT = 10 mA	2.5		24	V
Input voltage⁽¹⁾	V_IN	I_OUT = 80 mA	3		24	V
Voltage range (TPS715A01)	V_OUT		1.2		15	V
Output voltage accuracy⁽¹⁾	TPS715A01	V_OUT + 1 V ≤ V_IN ≤ 24 V, 1.2 V ≤ V_OUT ≤ 15V, 0 ≤ I_OUT ≤ 80 mA	0.96 × V_OUT(nom)	V_OUT(nom)	1.04 × V_OUT(nom)	V
Output voltage accuracy⁽¹⁾	TPS715A33	4.3 V < V_IN < 24 V, 0 ≤ I_OUT ≤ 80 mA	3.135	3.3	3.465	V
Output voltage line regulation⁽¹⁾	ΔV_OUT/ΔV_IN	V_OUT + 1 V < V_IN ≤ 24 V		20	60	mV
Load regulation	ΔV_OUT/ΔI_OUT	I_OUT = 100 μA to 80 mA		35		mV
Dropout voltage V_IN = V_OUT(NOM) – 0.1 V	V_DO	I_OUT = 80 mA		670	1120	mV
Output current limit	I_CL	V_OUT = 0 V	160		1100	mA
Ground pin current	I_GND	T_J = –40°C to 85°C, 0 mA ≤ I_OUT ≤ 80 mA		3.2	4.2	μA
		0 mA ≤ I_OUT ≤ 80 mA		3.2	4.8
		V_IN = 24 V, 0 mA ≤ I_OUT ≤ 80 mA			5.8
Power-supply ripple rejection	PSRR	f = 100 kHz, C_OUT = 10 μF		60		dB
Output noise voltage	V_IN	BW = 200 Hz to 100 kHz, C_OUT = 10 μF, I_OUT = 50 mA		575		μVrms