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ZHCSDE4A December 2014 – February 2015 TPS62184

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

YZF|24
- MXBG079I

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購(gòu)信息

7 Specifications

7.1 Absolute Maximum Ratings⁽¹⁾

Over operating junction temperature range (unless otherwise noted)

		MIN	MAX	UNIT
Pin voltage range⁽²⁾	VIN1, VIN2	–0.3	20	V
	EN, PG, SW1, SW2	–0.3	V_IN + 0.3	V
	SS/TR	–0.3	V_IN + 0.3, but ≤ 7	V
	FB, VO	–0.3	7	V
Power good sink current	PG		10	mA
Operating junction temperature, T_J		–40	150	°C
Storage temperature, T_stg		–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltages are with respect to network ground pin.

7.2 ESD Ratings

		VALUE		UNIT
V_ESD⁽¹⁾	Human Body Model (HBM) ESD stress voltage⁽²⁾	±1000		V
V_ESD⁽¹⁾	Charge device model (CDM) ESD stress voltage	±500		V

(1) Electrostatic discharge (ESD) to measure device sensitivity and immunity to damage caused by assembly line electrostatic discharges in to the device.

(2) Level listed above is the passing level per ANSI, ESDA, and JEDEC JS-001. JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

Over operating junction temperature range (unless otherwise noted)

		MIN	MAX	UNIT
Supply voltage range, V_IN		4	17	V
Output voltage range, V_OUT		0.9	3.5	V
Maximum Output current, I_OUT(max)	0.9V ≤ V_OUT ≤ 1.8V	6		A
	1.8V ≤ V_OUT ≤ 2.5V	5.5		A
	2.5V ≤ V_OUT ≤ 3.5V	5		A
Operating junction temperature, T_J		–40	125	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS62184	UNIT
THERMAL METRIC⁽¹⁾		YZF (24 PINS)	UNIT
R_θJA	Junction-to-ambient thermal resistance	61.5	°C/W
R_θJCtop	Junction-to-case (top) thermal resistance	0.3
Rθ_JB	Junction-to-board thermal resistance	10.1
ψ_JT	Junction-to-top characterization parameter	0.1
ψ_JB	Junction-to-board characterization parameter	10.1
R_θJCbot	Junction-to-case (bottom) thermal resistance	n/a

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

Over operating junction temperature range (T_J= –40°C to +125°C) and V_IN = 4 V to 17 V.
Typical values at V_IN = 12 V and T_J = 25°C (unless otherwise noted).

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
SUPPLY
V_IN	Input voltage range			4		17	V
I_Q	Operating quiescent current	EN = High, I_OUT = 0 mA, Device not switching, (T_J = –40°C to +85°C)			28	55	µA
I_SD	Shutdown current	EN = Low (≤ 0.3 V), (T_J = –40°C to +85°C)			2.8	15	µA
V_UVLO	Undervoltage lockout threshold ⁽¹⁾	Falling input voltage		3.5	3.6	3.7	V
V_UVLO	Undervoltage lockout threshold ⁽¹⁾	Hysteresis			300		mV
T_SD	Thermal shutdown	Rising junction temperature			160		°C
T_SD	Thermal shutdown	Hysteresis			20		°C
CONTROL (EN, SS/TR, PG)
V_{H_EN}	High-level input threshold voltage (EN)			0.97	1	1.03	V
V_{L_EN}	Low-level input threshold voltage (EN)			0.87	0.9	0.93	V
I_{LKG_EN}	Input leakage current (EN)	EN = V_IN or GND			0.01	1.2	µA
I_SS/TR	SS/TR pin source current			4.5	5	5.5	µA
V_{TH_PG}	Power good threshold voltage	Rising (%V_OUT)		94%	96%	98%
V_{TH_PG}	Power good threshold voltage	Falling (%V_OUT)		90%	92%	94%
V_{OL_PG}	Power good output low voltage	I_PG= -2 mA				0.3	V
I_{LKG_PG}	Input leakage current (PG)				1	100	nA
POWER SWITCH
R_DS(ON)	High-side MOSFET ON-resistance	V_IN = 7.5 V	Phase 1		27	65	mΩ
	High-side MOSFET ON-resistance		Phase 2		27	65	mΩ
	Low-side MOSFET ON-resistance		Phase 1		21	45	mΩ
	Low-side MOSFET ON-resistance		Phase 2		21	45	mΩ
I_LIM	High-side MOSFET current limit	Each phase, V_IN = 7.5 V		3.5	4.2	5.0	A
T_PSD	Phase shift delay time	Phase 2 after Phase 1, PWM mode			250		ns
OUTPUT
V_REF	Internal reference voltage			0.792	0.8	0.808	V
I_{LKG_FB}	Input leakage current (FB)	V_FB = 0.8 V			1	100	nA
R_DISCHARGE	Output discharge resistance	EN = Low			60		Ω
V_OUT	Output voltage range	V_IN ≥ V_OUT		0.9		3.5	V
	Feedback voltage accuracy⁽²⁾	PWM Mode, V_IN ≥ V_OUT + 1 V		–1%		1%
		Power Save Mode, V_OUT = 3.3 V, I_load ≥ 1 mA, L = 1 µH, C_OUT = 2 x 47 µF, (T_J = –40°C to +85°C)		-1%		2%
		Power Save Mode, V_OUT = 1.8 V, I_load ≥ 1 mA, L = 1 µH, C_OUT = 4 x 47 µF, (T_J = –40°C to +85°C)		-1%		2%
		Power Save Mode, V_OUT=0.9V, I_load ≥ 1 mA, L = 1 µH, C_OUT = 4 x 47 µF, (T_J = –40°C to +85°C)		–1%		3%
	Load regulation	PWM Mode operation			0.06		%/A
	Line regulation	4 V ≤ V_IN ≤ 17 V, I_OUT = 4 A			0.01		%/V
t_HICCUP	Hiccup on time				0.9		ms
t_HICCUP	Hiccup off time				5		ms