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SLVSA05B August 2009 – August 2015 TPS61086

PRODUCTION DATA.

封裝選項

機械數(shù)據(jù) (封裝 | 引腳)

DRC|10
- MPDS117L

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

DRC|10
- QFND013N

訂購信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

	MIN	MAX	UNIT
Input voltage IN⁽²⁾	–0.3	7	V
Voltage on pins EN, FB, SS, MODE, COMP	–0.3	7	V
Voltage on pin SW	–0.3	20	V
Operating junction temperature	–40	150	°C
Storage temperature	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability

(2) All voltage values are with respect to network ground terminal.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
		Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500
		Machine Model	±200

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as ±2000 V may actually have higher performance.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as ±500 V may actually have higher performance.

6.3 Recommended Operating Conditions

		MIN	MAX	UNIT
V_IN	Input voltage	2.3	6	V
V_S	Boost output voltage	V_IN + 0.5	18.5	V
T_A	Operating free-air temperature	–40	85	°C
T_J	Operating junction temperature	–40	125	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS61086	UNIT
		DRC (VSON)
		10 PINS
R_θJA	Junction-to-ambient thermal resistance	54.7	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	67.2	°C/W
R_θJB	Junction-to-board thermal resistance	29.6	°C/W
ψ_JT	Junction-to-top characterization parameter	2.3	°C/W
ψ_JB	Junction-to-board characterization parameter	29.8	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	15.6	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

V_IN = 3.3 V, EN = IN, V_S = 12 V, T_A = –40°C to 85°C, typical values are at T_A = 25°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY
V_IN	Input voltage range		2.3		6	V
I_Q	Operating quiescent current into IN	Device not switching, V_FB = 1.3 V		75	100	μA
I_SDVIN	Shutdown current into IN	EN = GND			1	μA
V_UVLO	Undervoltage lockout threshold	V_IN falling			2.2	V
		V_IN rising			2.3	V
T_SD	Thermal shutdown	Temperature rising		150		°C
T_SDHYS	Thermal shutdown hysteresis			14		°C
LOGIC SIGNALS EN, FREQ
V_IH	High level input voltage	V_IN = 2.3 V to 6 V	2			V
V_IL	Low level input voltage	V_IN = 2.3 V to 6 V			0.5	V
I_INLEAK	Input leakage current	EN = GND			0.1	μA
BOOST CONVERTER
V_S	Boost output voltage		V_IN + 0.5		18.5	V
V_FB	Feedback regulation voltage		1.23	1.238	1.246	V
gm	Transconductance error amplifier			107		μA/V
I_FB	Feedback input bias current	V_FB = 1.238 V			0.1	μA
r_DS(on)	N-channel MOSFET on-resistance	V_IN = V_GS = 5 V, I_SW = current limit		0.13	0.2	Ω
r_DS(on)	N-channel MOSFET on-resistance	V_IN = V_GS = 3.3 V, I_SW = current limit		0.16	0.23	Ω
I_SWLEAK	SW leakage current	EN = GND, V_SW = 6 V			10	μA
I_LIM	N-channel MOSFET current limit		2	2.6	3.2	A
I_SS	Soft-start current	V_SS = 1.238 V	7	10	13	μA
f_S	Oscillator frequency		0.9	1.2	1.5	MHz
	Line regulation	V_IN = 2.3 V to 6 V, I_OUT = 10 mA		0.0002		%/V
	Load regulation	V_IN = 3.3 V, I_OUT = 1 mA to 400 mA		0.11		%/A

6.6 Typical Characteristics

The typical characteristics are measured with the inductor CDRH6D12 3.3 µH from Sumida and the rectifier diode SL22.

Table 1. Table of Graphs

			FIGURE
η	Efficiency vs Load current- PFM	V_IN = 3.3 V, V_S = 9 V, 12 V, 15 V	Figure 1
η	Efficiencyvs Load current - Forced PWM	V_IN = 3.3 V, V_S = 9 V, 12 V, 15 V	Figure 2
I_out(max)	Maximum output current		Figure 3
f_S	Switching frequency - Forced PWM	vs Load current, V_IN = 3.3 V, V_S = 12 V	Figure 4
f_S	Switching frequency - Forced PWM	vs Supply voltage, V_S = 12 V, I_out = 200 mA	Figure 5
	Supply current	vs Supply voltage,V_IN = 3.3 V, V_S = 12 V	Figure 6

Figure 1. PFM Mode Efficiency vs Output Current

Figure 3. Output Current vs Supply Voltage

Figure 5. Frequency vs Supply Voltage

Figure 2. Force PWM Mode Efficiency vs Output Current

Figure 4. Frequency vs Load Current

Figure 6. Supply Current vs Supply Voltage