www.国产精品.com,中文乱码字幕无线观看2019

ZHCSF10B May 2016 – August 2017 TPS564201

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

DDC|6
- MPDS124I

散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購(gòu)信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
Input voltage	VIN, EN	–0.3	19	V
	VBST	–0.3	25	V
	VBST (10 ns transient)	–0.3	27	V
	VBST (vs SW)	–0.3	6.5	V
	VFB	–0.3	6.5	V
	SW	–2	19	V
	SW (10 ns transient)	–3.5	21	V
Operating junction temperature, T_J		–40	150	°C
Storage temperature, T_stg		–55	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±4000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

			MIN	MAX	UNIT
V_IN	Supply input voltage range		4.5	17	V
V_I	Input voltage range	VBST	–0.1	23	V
		VBST (10 ns transient)	–0.1	26
		VBST (vs SW)	–0.1	6.0
		EN	–0.1	17
		VFB	–0.1	5.5
		SW	–1.8	17
		SW (10 ns transient)	–3.5	20
T_J	Operating junction temperature		–40	125	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS564201	UNIT
		DDC (SOT)
		6 PINS
R_θJA	Junction-to-ambient thermal resistance	86.3	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	39.4	°C/W
R_θJB	Junction-to-board thermal resistance	13.3	°C/W
ψ_JT	Junction-to-top characterization parameter	1.8	°C/W
ψ_JB	Junction-to-board characterization parameter	13.3	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

T_J = –40°C to 125°C, V_IN = 12 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
SUPPLY CURRENT
I_VIN	Operating – non-switching supply current	V_IN current, EN = 5 V, V_FB = 1 V	TPS564201		400	510	µA
I_VINSDN	Shutdown supply current	V_IN current, EN = 0 V			0.9	5	µA
LOGIC THRESHOLD
V_ENH	EN high-level input voltage	EN		1.6			V
V_ENL	EN low-level input voltage	EN				0.8	V
R_EN	EN pin resistance to GND	V_EN = 12 V		225	425	900	kΩ
V_FB VOLTAGE AND DISCHARGE RESISTANCE
V_FBTH	V_FB threshold voltage	V_O = 1.05 V, continuous mode operation		745	760	775	mV
I_VFB	V_FB input current	V_FB = 0.8 V			0	±0.1	µA
MOSFET
R_DS(on)h	High-side switch resistance	T_A = 25°C, V_BST – SW = 5.5 V			50		mΩ
R_DS(on)l	Low-side switch resistance	T_A = 25°C			22		mΩ
CURRENT LIMIT
I_ocl	Current limit⁽¹⁾	DC current, V_OUT = 1.05 V, L₁ = 1.5 µH		4.2	6	7.7	A
THERMAL SHUTDOWN
T_SDN	Thermal shutdown threshold⁽¹⁾	Shutdown temperature			172		°C
T_SDN	Thermal shutdown threshold⁽¹⁾	Hysteresis			38		°C
ON-TIME TIMER CONTROL
t_OFF(MIN)	Minimum off time	V_FB = 0.68 V			220	280	ns
SOFT START
t_SS	Soft-start time	Internal soft-start time			1.0		ms
FREQUENCY
F_sw	Switching frequency	V_IN = 12 V, V_O = 1.05 V, FCCM mode			560		kHz
OUTPUT UNDERVOLTAGE AND OVERVOLTAGE PROTECTION
V_UVP	Output UVP threshold	Hiccup detect (H > L)			65%
T_{HICCUP_WAIT}	Hiccup on time				1.9		ms
T_{HICCUP_RE}	Hiccup time before restart				15.5		ms
UVLO
UVLO	UVLO threshold	Wake up VIN voltage			4.0	4.3	V
		Shutdown VIN voltage		3.3	3.6
		Hysteresis VIN voltage⁽¹⁾			0.4