SLVSAN2D November 2010 – August 2016 TPS54328
PRODUCTION DATA.
- 1 Features
- 2 Applications
- 3 Description
- 4 Revision History
- 5 Pin Configuration and Functions
- 6 Specifications
- 7 Detailed Description
- 8 Application and Implementation
- 9 Power Supply Recommendations
- 10Layout
- 11Device and Documentation Support
- 12Mechanical, Packaging, and Orderable Information
封裝選項
機械數(shù)據(jù) (封裝 | 引腳)
散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)
訂購信息
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Input voltage | VIN, EN | –0.3 | 20 | V |
| VBST | –0.3 | 26 | ||
| VBST (10 ns transient) | –0.3 | 28 | ||
| VBST (vs SW) | –0.3 | 6.5 | ||
| VFB, SS | –0.3 | 6.5 | ||
| SW | –2 | 20 | ||
| SW (10-ns transient) | –3 | 22 | ||
| Output voltage | VREG5 | –0.3 | 6.5 | V |
| GND | –0.3 | 0.3 | ||
| Voltage from GND to thermal pad, Vdiff | –0.2 | 0.2 | V | |
| Operating junction temperature, TJ | –40 | 150 | °C | |
| Storage temperature, Tstg | –55 | 150 | °C | |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 | |||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| VIN | Supply input voltage | 4.5 | 18 | V | |
| Input voltage | VBST | –0.1 | 24 | V | |
| VBST (10-ns transient) | –0.1 | 27 | |||
| VBST(vs SW) | –0.1 | 5.7 | |||
| SS | –0.1 | 5.7 | |||
| EN | –0.1 | 18 | |||
| VFB | –0.1 | 5.5 | |||
| SW | –1.8 | 18 | |||
| SW (10-ns transient) | –3 | 21 | |||
| GND | –0.1 | 0.1 | |||
| VOUT | Output voltage | VREG5 | –0.1 | 5.7 | V |
| IOUT | Output current | IVREG5 | 0 | 10 | mA |
| TA | Operating free-air temperature | –40 | 85 | °C | |
| TJ | Operating junction temperature | –40 | 150 | °C | |
6.4 Thermal Information
| THERMAL METRIC(1) | TPS54328 | UNIT | ||
|---|---|---|---|---|
| DDA (HSOP) | DRC (VSON) | |||
| 8 PINS | 10 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 42.1 | 43.9 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 50.9 | 55.4 | °C/W |
| RθJB | Junction-to-board thermal resistance | 31.8 | 18.9 | °C/W |
| ψJT | Junction-to-top characterization parameter | 5 | 0.7 | °C/W |
| ψJB | Junction-to-board characterization parameter | 13.5 | 19.1 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | 7.1 | 5.3 | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
6.5 Electrical Characteristics
over operating free-air temperature range, VIN = 12 V (unless otherwise noted)| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY CURRENT | ||||||
| IVIN | Operating non-switching supply current | VIN current, TA = 25°C, EN = 5 V, VFB = 0.8 V | 800 | 1200 | µA | |
| IVINSDN | Shutdown supply current | VIN current, TA = 25°C, EN = 0 V | 1.8 | 10 | µA | |
| LOGIC THRESHOLD | ||||||
| VENH | EN high-level input voltage | EN | 1.6 | V | ||
| VENL | EN low-level input voltage | EN | 0.45 | V | ||
| VFB VOLTAGE AND DISCHARGE RESISTANCE | ||||||
| VFBTH | VFB threshold voltage | TA = 25°C, VOUT = 1.05 V, IOUT = 10 mA, Eco-mode operation |
772 | mV | ||
| TA = 25°C, VOUT = 1.05 V, continuous mode operation | 749 | 765 | 781 | mV | ||
| IVFB | VFB input current | VFB = 0.8 V, TA = 25°C | 0 | ±0.1 | µA | |
| VREG5 OUTPUT | ||||||
| VVREG5 | VREG5 output voltage | TA = 25°C, 6 V < VIN < 18 V, 0 < IVREG5 < 5 mA | 5.2 | 5.5 | 5.7 | V |
| VLN5 | Line regulation | 6 V < VIN < 18 V, IVREG5 = 5 mA | 25 | mV | ||
| VLD5 | Load regulation | 0 mA < IVREG5 < 5 mA | 100 | mV | ||
| IVREG5 | Output current | VIN = 6 V, VVREG5 = 4 V, TA = 25°C | 60 | mA | ||
| MOSFET | ||||||
| RDS(ON)H | High-side switch resistance | TA = 25°C, VBST – SW = 5.5 V | 100 | mΩ | ||
| RDS(ON)L | Low-side switch resistance | TA = 25°C | 70 | mΩ | ||
| CURRENT LIMIT | ||||||
| IOCL | Current limit | LOUT = 1.5 µH(1), TA = –20ºC to 85ºC | 3.5 | 4.2 | 5.7 | A |
| THERMAL SHUTDOWN | ||||||
| TSDN | Thermal shutdown threshold | Shutdown temperature (1) | 165 | °C | ||
| Hysteresis (1) | 30 | |||||
| ON-TIME TIMER CONTROL | ||||||
| tON | ON time | VIN = 12 V, VOUT = 1.05 V | 150 | ns | ||
| tOFF(MIN) | Minimum off time | TA = 25°C, VFB = 0.7 V | 260 | 310 | ns | |
| SOFT START | ||||||
| ISSC | SS charge current | VSS = 0 V | 1.4 | 2 | 2.6 | µA |
| ISSD | SS discharge current | VSS = 0.5 V | 0.05 | 0.1 | mA | |
| UVLO | ||||||
| UVLO | UVLO threshold | Wake up VREG5 voltage | 3.45 | 3.75 | 4.05 | V |
| Hysteresis VREG5 voltage | 0.17 | 0.32 | 0.45 | |||
(1) Not production tested.
