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SLUS859C October 2008 – January 2015 TPS54233

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

D|8
- MSOI002K

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購(gòu)信息

7 Specifications

7.1 Absolute Maximum Ratings⁽¹⁾

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
Input Voltage	VIN	–0.3	30	V
	EN	–0.3	6
	BOOT		38
	VSENSE	–0.3	3
	COMP	–0.3	3
	SS	–0.3	3
Output Voltage	BOOT-PH		8	V
	PH	–0.6	30
	PH (10 ns transient from ground to negative peak)		–5
Source Current	EN		100	μA
	BOOT		100	mA
	VSENSE		10	μA
	PH		6	A
Sink Current	VIN		6	A
	COMP		100	μA
	SS		200	μA
Operating Junction Temperature		–40	150	°C
Storage Temperature		–65	150	°C

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

	MIN	TYP	MAX	UNIT
Operating Input Voltage on (VIN pin)	3.5		28	V
Operating junction temperature, T_J	–40		150	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		D	UNIT
THERMAL METRIC⁽¹⁾		8 PINS	UNIT
R_θJA	Junction-to-ambient thermal resistance	116.7	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	62.4
R_θJB	Junction-to-board thermal resistance	57.0
ψ_JT	Junction-to-top characterization parameter	14.5
ψ_JB	Junction-to-board characterization parameter	56.5
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	N/A

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

T_J = –40°C to 150°C, VIN = 3.5V to 28V (unless otherwise noted)

PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY VOLTAGE (VIN PIN)
Internal undervoltage lockout threshold	Rising and Falling			3.5	V
Shutdown supply current	EN = 0V, VIN = 12V, –40°C to 85°C		1	4	μA
Operating – non switching supply current	VSENSE = 0.85 V		75	110	μA
ENABLE AND UVLO (EN PIN)
Enable threshold	Rising and Falling		1.25	1.35	V
Input current	Enable threshold – 50 mV		-1		μA
Input current	Enable threshold + 50 mV		-4		μA
VOLTAGE REFERENCE
Voltage reference		0.772	0.8	0.828	V
HIGH-SIDE MOSFET
On resistance	BOOT-PH = 3 V, VIN = 3.5 V		115	200	mΩ
On resistance	BOOT-PH = 6 V, VIN = 12 V		80	150	mΩ
ERROR AMPLIFIER
Error amplifier transconductance (gm)	–2 μA < I_(COMP) < 2 μA, V_(COMP)= 1 V		92		μmhos
Error amplifier DC gain⁽¹⁾	VSENSE = 0.8 V		800		V/V
Error amplifier unity gain bandwidth⁽¹⁾	5 pF capacitance from COMP to GND pins		2.7		MHz
Error amplifier source/sink current	V_(COMP) = 1 V, 100 mV overdrive		±7		μA
Switch current to COMP transconductance	VIN = 12 V		9		A/V
PULSE SKIPPING Eco-mode™
Pulse skipping Eco-mode™ switch current threshold			100		mA
CURRENT LIMIT
Current limit threshold	VIN = 12 V	2.3	3.5		A
THERMAL SHUTDOWN
Thermal Shutdown			165		°C
SLOW START (SS PIN)
Charge current	V_(SS) = 0.4 V		2		μA
SS to VSENSE matching	V_(SS) = 0.4 V		10		mV

(1) Specified by design

7.6 Switching Characteristics

T_J = –40°C to 150°C, VIN = 3.5 to 28 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SWITCHING FREQUENCY
	Device switching frequency	VIN = 12 V	210	300	390	kHz
	Minimum controllable on time	VIN = 12 V, 25°C		105	130	ns
	Maximum controllable duty ratio⁽¹⁾	BOOT-PH = 6 V	90%	93%