ZHCSGE0B June 2017 – January 2019 TPS53681
PRODUCTION DATA.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| RRPGDL | Open-drain pulldown resistance | VAVR_RDY = VBVR_RDY = VVR_FAULT = 0.45 V | 36 | 50 | Ω | |
| IVRTTLK | Open-drain leakage current | SDIO, VR_HOT, AVR_RDY, BVR_RDY, VR_FAULT, Hi Z Leakage, apply to 3.3-V supply in off state | –2 | 0.2 | 2 | µA |
| VAENL | Channel A ENABLE logic low | 0.7 | V | |||
| VAENH | Channel A ENABLE logic high | 0.8 | V | |||
| VAENHYS | Channel A ENABLE hysteresis | 0.028 | 0.05 | 0.07 | V | |
| tAENDIG | Channel A ENABLE deglitch(1) | 0.2 | µs | |||
| IAENH | Channel A I/O 1.1-V leakage | VAVR_EN = 1.1 V | 25 | µA | ||
| VBENL | Channel B ENABLE logic low | 0.7 | V | |||
| VBENH | Channel B ENABLE logic high | 0.8 | V | |||
| VBENHYS | Channel B ENABLE hysteresis | 0.028 | 0.05 | 0.07 | V | |
| tBENDIG | Channel B ENABLE deglitch(1) | 0.2 | µs | |||
| tAENVRRDYF | Channel A ENABLE low to AVR_RDY low | From AVR_EN low to AVR_RDY low | 1.5 | µs | ||
| IBENH | Channel B I/O 1.1-V leakage | VBENH = 1.1 V | 25 | µA | ||
| VRSTL | RESET logic low | 0.8 | V | |||
| VRSTH | RESET logic high(1) | 1.09 | V | |||
| tRSTTDLY | RESET delay time | 1 | µs | |||