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ZHCSD52 December 2014 TPS2592ZA

PRODUCTION DATA.

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8 Specifications

8.1 Absolute Maximum Ratings

over operating temperature range (unless otherwise noted) ⁽¹⁾⁽²⁾

		MIN	MAX	UNIT
Supply voltage range⁽¹⁾	VIN	–0.3	20	V
Supply voltage range⁽¹⁾	VIN (10 ms Transient)		22	V
Output voltage	OUT	–0.3	VIN + 0.3	V
Output voltage	OUT (Transient < 1 µs)		-1.2	V
Voltage	ILIM	–0.3	7	V
	EN/UVLO	–0.3	7
	dV/dT	–0.3	7
	BFET	–0.3	30
Continuous power dissipation		See the Thermal Information
Maximum power dissipation⁽³⁾, P_D = (V_VIN-V_OUT)*I_LIMIT	T_A = –40°C to +85°C		40	W
Maximum power dissipation⁽³⁾, P_D = (V_VIN-V_OUT)*I_LIMIT	T_A = 0°C to +85°C		50	W
Storage temperature range, T_stg		-65	150	°C

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values, except differential voltages, are with respect to network ground terminal.

(3) Refer detailed explanation in the application section Maximum Device Power Dissipation Considerations.

8.2 ESD Ratings

			MAX	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

8.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	TYP	MAX	UNIT
Input voltage range	VIN	4.5		18⁽¹⁾	V
	BFET	0		VIN+6
	dV/dT, EN/UVLO	0		6
	ILIM	0		3.3
Continuous output current	I_OUT	0		1.7	A
Resistance	ILIM	10		45.3	kΩ
External capacitance	OUT	0.1	1	1000	µF
External capacitance	dV/dT		1	1000	nF
Operating junction temperature range, T_J		–40	25	125	°C
Operating Ambient temperature range, T_A		–40	25	85	°C

(1) Maximum voltage (including input transients) at VIN pin should not exceed absolute maximum rating as specified in Absolute Maximum Ratings.

8.4 Thermal Information⁽¹⁾

over operating free-air temperature range (unless otherwise noted)

THERMAL METRIC		TPS2592Zx	UNIT
THERMAL METRIC		DRC (10) PINS	UNIT
R_θJA	Junction-to-ambient thermal resistance	45.9	°C/W
R_θJCtop	Junction-to-case (top) thermal resistance	53
R_θJB	Junction-to-board thermal resistance	21.2
ψ_JT	Junction-to-top characterization parameter	1.2
ψ_JB	Junction-to-board characterization parameter	21.4
R_θJCbot	Junction-to-case (bottom) thermal resistance	5.9

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

8.5 Electrical Characteristics

–40°C ≤ T_J ≤ 125°C, VIN = 12 V, V_EN_/UVLO = 2 V, R_ILIM = 45.3 kΩ, C_dVdT = OPEN. All voltages referenced to GND (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
VIN (INPUT SUPPLY)
V_UVR	UVLO threshold, rising		4.15	4.3	4.45	V
V_UVhyst	UVLO hysteresis⁽¹⁾			5.4%
IQ_ON	Supply current	Enabled: EN/UVLO = 2 V	0.2	0.42	0.65	mA
IQ_OFF	Supply current	EN/UVLO = 0 V		0.1	0.25	mA
EN/UVLO (ENABLE/UVLO INPUT)
V_ENR	EN Threshold voltage, rising		1.37	1.4	1.44	V
V_ENF	EN Threshold voltage, falling		1.32	1.35	1.39	V
I_EN	EN Input leakage current	0 V ≤ V_EN ≤ 5V	–100	0	100	nA
dV/dT (OUTPUT RAMP CONTROL)
I_dVdT	dV/dT Charging current⁽¹⁾	V_dVdT= 0 V		220		nA
R_{dVdT_disch}	dV/dT Discharging resistance	EN/UVLO = 0 V, I_dVdT = 10 mA sinking	50	73	100	Ω
V_dVdTmax	dV/dT Max capacitor voltage⁽¹⁾			5.5		V
GAIN_dVdT	dV/dT to OUT gain⁽¹⁾	ΔV_dVdT		4.85		V/V
ILIM (CURRENT LIMIT PROGRAMMING)
I_ILIM	ILIM Bias current⁽¹⁾			10		µA
I_OL	Overload current limit⁽²⁾	R_ILIM = 45.3 kΩ, V_VIN-OUT = 1 V	1.79	2.10	2.42	A
I_OL-R-Short		R_ILIM = 0 Ω, Shorted Resistor Current Limit (Single Point Failure Test: UL60950)⁽¹⁾		0.7		A
I_OL-R-Open		R_ILIM= OPEN, Open Resistor Current Limit (Single Point Failure Test: UL60950)⁽¹⁾		0.55		A
I_SCL	Short-circuit current limit⁽²⁾	R_ILIM = 45.3 kΩ, V_VIN-OUT = 12 V	1.66	1.98	2.29	A
RATIO_FASTRIP	Fast-Trip comparator level w.r.t. overload current limit⁽¹⁾	I_FASTRIP : I_OL		160%
V_OpenILIM	ILIM Open resistor detect threshold⁽¹⁾	V_ILIM Rising, R_ILIM= OPEN		3.1		V
OUT (PASS FET OUTPUT)
R_DS(on)	FET ON resistance	T_J = 25°C	21	28	33	mΩ
R_DS(on)	FET ON resistance	T_J= 125°C		39	46	mΩ
I_OUT-OFF-LKG	OUT Bias current in off state	V_EN/UVLO = 0 V, V_OUT = 0 V (Sourcing)	–5	0	1	µA
I_OUT-OFF-SINK	OUT Bias current in off state	V_EN/UVLO = 0V, V_OUT = 300 mV (Sinking)	10	15	20	µA
BFET (BLOCKING FET GATE DRIVER)
I_BFET	BFET Charging current⁽¹⁾	V_BFET = V_OUT		2		µA
V_BFETmax	BFET Clamp voltage⁽¹⁾			V_VIN + 6.4		V
R_BFETdisch	BFET Discharging resistance to GND	V_EN/UVLO = 0 V, I_BFET = 100 mA	15	26	36	Ω
TSD (THERMAL SHUT DOWN)
T_SHDN	TSD Threshold, rising⁽¹⁾			160		°C
T_SHDNhyst	TSD Hysteresis⁽¹⁾			10		°C
	Thermal fault: latched or autoretry	TPS2592ZL	LATCHED
	Thermal fault: latched or autoretry	TPS2592ZA	AUTO-RETRY

(1) These parameters are provided for reference only and do not constitute part of TI's published device specifications for purposes of TI's product warranty.

(2) Pulsed testing techniques used during this test maintain junction temperature approximately equal to ambient temperature.

8.6 Timing Requirements

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
T_ON	Turn-on delay⁽¹⁾	EN/UVLO → H to I_VIN= 100 mA, 1-A resistive load at OUT		220		µs
t_OFFdly	Turn Off delay⁽¹⁾	EN↓ to BFET↓, C_BFET = 0		0.4		µs
dV/dT (OUTPUT RAMP CONTROL)
t_dVdT	Output ramp time	EN/UVLO → H to OUT = 11.7 V, C_dVdT = 0	0.7	1	1.3	ms
t_dVdT	Output ramp time	EN/UVLO → H to OUT = 11.7 V, C_dVdT = 1 nF⁽¹⁾		12		ms
ILIM (CURRENT LIMIT PROGRAMMING)
t_FastOffDly	Fast-Trip comparator delay⁽¹⁾	I_OUT > I_FASTRIP to I_OUT= 0 (Switch Off)		3		µs
BFET (BLOCKING FET GATE DRIVER)
t_BFET-ON	BFET Turn-On duration⁽¹⁾	EN/UVLO → H to V_BFET = 12 V, C_BFET = 1 nF		4.2		ms
t_BFET-ON	BFET Turn-On duration⁽¹⁾	EN/UVLO → H to VB_FET = 12 V, C_BFET = 10 nF		42		ms
t_BFET-OFF	BFET Turn-off duration⁽¹⁾	EN/UVLO → L to _VBFET = 1 V, C_BFET = 1 nF		0.4		µs
t_BFET-OFF	BFET Turn-off duration⁽¹⁾	EN/UVLO → L to V_BFET= 1 V, C_BFET = 10 nF		1.4		µs

(1) These parameters are provided for reference only and do not constitute part of TI's published device specifications for purposes of TI's product warranty.

8.7 Typical Characteristics

T_J = 25°C, V_VIN = 12 V, V_EN/UVLO = 2 V, R_ILIM = 45.3 kΩ, C_VIN = 0.1 µF, C_OUT = 1 µF, C_dVdT = OPEN (unless stated otherwise)

Figure 1. Input UVLO vs Temperature

TPS2592Zx

Figure 3. I_VIN-ON vs V_IN

Figure 5. I_dVdT vs Temperature

Figure 7. V_{EN_VIH}, V_{EN_VIL} vs Temperature

TPS2592Zx, C_dVdT = OPEN, C_OUT = 4.7 µF

Figure 9. Transient: Output Ramp:

EN↓

Figure 11. Turn Off Delay to BFET

Figure 13. R_DSON vs Temperature

45.3 kΩ

Figure 15. I_OL, I_SC vs Temperature

R_ILIM = OPEN

Figure 17. I_OL-R-Open vs Temperature

Figure 19. Transient: Output Short Circuit

I_LOAD Stepped From 50% to 120%, back to 50%

Figure 21. Transient: Overload Current Limit

TPS2592ZL

Figure 23. Transient: Thermal Fault Latched

Figure 2. IQ_OFF vs V_IN

Figure 4. T_ON vs Temperature

TPS2592Zx

Figure 6. T_dVdT vs C_dVdT

Figure 8. I_EN (Leakage Current) vs V_EN

EN ↓

Figure 10. Transient: Turn Off Delay

VIN↓

Figure 12. Turn Off Delay to BFET

45.3 kΩ

Figure 14. I_OUT vs V_VIN-OUT

R_ILIM = 0

Figure 16. I_OL-R-Short vs Temperature

Figure 18. V_OpenILIM vs Temperature

Figure 20. Short Circuit (Zoom): Fast-trip Comparator

TPS2592ZA

Figure 22. Transient: Thermal Fault Auto-Retry

TPS2592Zx, C_dVdT = OPEN, C_OUT = 10 µF

Figure 24. Transient: Output Ramp

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