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ZHCS791C March 2012 – July 2015 TPS2378

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

DDA|8
- MPDS092F

散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)

DDA|8
- PPTD058J

訂購(gòu)信息

6 Specifications

6.1 Absolute Maximum Ratings

over recommended T_J range; voltages with respect to V_VSS (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
Input voltage	V_DD, DEN	–0.3	100	V
	RTN⁽²⁾	–0.6	100
	CLS⁽³⁾	–0.3	6.5
	APD to RTN	–0.3	19
	[CDB, T2P] to RTN	–0.3	100
Sinking current	RTN⁽⁴⁾	Internally limited		mA
	CDB, T2P		5
	DEN		1
Sourcing current	CLS		65	mA
T_JMAX	Maximum junction temperature	Internally limited		°C
T_stg	Storage temperature	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) With I_(RTN) = 0

(3) Do not apply voltages to these pins

(4) SOA limited to RTN = 80 V at 1.2 A.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾	2000	V
		Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾	500
		IEC 61000-4-2 contact discharge⁽³⁾	8000
		IEC 61000-4-2 air-gap discharge⁽³⁾	15000

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

(3) Discharges applied to circuit of Figure 24 between RJ-45, adapter, and output voltage rails

6.3 Recommended Operating Conditions

over operating free-air temperature range and voltages with respect to V_SS (unless otherwise noted)

		MIN	MAX	UNIT
Input voltage range	RTN, VDD	0	57	V
	APD to RTN	0	18
	CDB, T2P to RTN	0	57
Sinking current	RTN		0.85	A
Sinking current	CDB, T2P		2	mA
Resistance	CLS⁽¹⁾	60		Ω
Junction temperature		–40	125	°C

(1) Voltage should not be externally applied to this pin.

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS2378	UNIT
		DDA (HSOP)
		8 PINS
R_θJA	Junction-to-ambient thermal resistance	45.9	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	51.9	°C/W
R_θJB	Junction-to-board thermal resistance	28.8	°C/W
ψ_JT	Junction-to-top characterization parameter	8.9	°C/W
ψ_JB	Junction-to-board characterization parameter	28.7	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	6.7	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

40 V ≤ V_VDD ≤ 57 V, R_DEN = 24.9 kΩ, V_CDB, V_CLS, and V_T2P open; V_APD = V_RTN; –40°C ≤ T_J ≤ 125°C. Positive currents are into pins. Typical values are at 25°C. All voltages are with respect to V_VSS unless otherwise noted.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
DETECTION (DEN)
	Bias current	DEN open, V_VDD = 10.1 V, Measure I_SUPPLY(VDD, RTN, DEN), Not in mark	3	4.8	12	µA
	Detection current	Measure I_SUPPLY(VDD, RTN, DEN), V_DD = 1.4 V	53.8	56.5	58.3	µA
	Detection current	Measure I_SUPPLY(VDD, RTN, DEN), V_DD = 10.1 V, Not in mark	395	410	417	µA
V_{PD_DIS}	Disable threshold	DEN falling	3	3.7	5	V
V_{PD_DIS}	Hysteresis		50	113	200	mV
AUXILIARY POWER DETECTION (APD)
V_APDEN	Voltage threshold	V_APD rising, measure to V_RTN	1.4	1.5	1.6	V
V_APDH	Voltage threshold	Hysteresis, measure to V_RTN	0.27	0.3	0.33	V
	Sinking current	V_(APD–RTN) = 5 V, measure I_APD	1	1.73	3	µA
CLASSIFICATION (CLS)
I_CLS	Classification current	13 V ≤ V_VDD ≤ 21 V, Measure IV_DD + I_DEN + I_RTN
		R_CLS = 1270 Ω	1.8	2.17	2.6	mA
		R_CLS = 243 Ω	9.9	10.6	11.2
		R_CLS = 137 Ω	17.6	18.6	19.4
		R_CLS = 90.9 Ω	26.5	27.9	29.3
		R_CLS = 63.4 Ω	38	39.9	42
V_{CL_ON}	Class lower threshold	V_VDD rising, I_CLS ↑	11.9	12.5	13	V
V_{CL_H}	Class lower threshold	Hysteresis	1.4	1.6	1.7	V
V_{CU_ON}	Class upper threshold	V_VDD rising, I_CLS↓	21	22	23	V
V_{CU_H}	Class upper threshold	Hysteresis	0.5	0.78	0.9	V
V_MSR	Mark reset threshold	V_VDD falling	3	3.9	5	V
	Mark state resistance	2-point measurement at 5 V and 10.1 V	6	10	12	kΩ
	Leakage current	V_VDD = 57 V, V_CLS = 0 V, measure I_CLS			1	µA
PASS DEVICE (RTN)
r_DS(on)	On resistance		0.2	0.42	0.75	Ω
	Input bias current	V_VDD = V_RTN = 30 V, measure I_RTN			30	µA
	Current limit	V_RTN=1.5 V	0.85	1	1.2	A
	Inrush current limit	V_RTN= 2 V, V_VDD: 20 V → 48 V	100	140	180	mA
	Inrush termination	Percentage of inrush current	80%	90%	99%
	Foldback threshold	V_RTN rising	11	12.3	13.6	V
	Foldback deglitch time	V_RTN rising to when current limit changes to inrush current limit	500	800	1500	µs
CONVERTER DISABLE (CDB)
	Output low voltage	Measure V_CDB – V_RTN, I_CDB = 2 mA, V_RTN = 2 V, V_DD: 20 V → 48 V		0.27	0.5	V
	Leakage current	V_CDB = 57 V, V_RTN = 0 V			10	μA
TYPE 2 PSE INDICATION (T2P)
V_T2P	Output low voltage	I_T2P = 2 mA, after 2-event classification and inrush is complete, V_RTN = 0 V		0.26	0.6	V
	Leakage current	V_T2P = 57 V, V_RTN = 0 V			10	µA
UVLO
V_{UVLO_R}	UVLO rising threshold	V_VDD rising	36.3	38.1	40	V
V_{UVLO_R}	UVLO falling threshold	V_VDD falling	30.5	32	33.6	V
V_{UVLO_H}	UVLO hysteresis			6.1		V
THERMAL SHUTDOWN
	Shutdown	T_J↑	135	145		°C
	Hysteresis ⁽¹⁾			20		°C
BIAS CURRENT
	Operating current	40 V ≤ V_VDD ≤ 57 V		285	500	µA