亚洲国产专区校园欧美,专区亚洲欧洲日产国码AV

ZHCSJ60D November 2018 – December 2019 TPS1HA08-Q1

PRODUCTION DATA.

封裝選項

機械數(shù)據(jù) (封裝 | 引腳)

PWP|16
- MPDS371C

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

PWP|16
- PPTD352A

訂購信息

7.5 Electrical Characteristics

V_BB = 8 V to 18 V, T_J = –40°C to 150°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
INPUT VOLTAGE AND CURRENT
V_Clamp	V_DS clamp voltage			40		58	V
V_UVLOF	V_BB undervoltage lockout falling				2.5	3	V
V_UVLOR	V_BB undervoltage lockout rising				2.5	3	V
I_SB	Standby current (includes MOSFET leakage)	V_BB = 13.5 V, T_J = 25°C V_EN = V_{DIA_EN} = 0 V, V_OUT = 0 V				0.5	µA
		V_BB = 13.5 V, T_J = 85°C V_EN = V_{DIA_EN} = 0 V, V_OUT = 0 V				0.5	µA
		V_BB= 13.5 V, T_J = 125°C, V_EN = V_{DIA_EN} = 0 V, V_OUT = 0 V				3	µA
I_OUT(standby)	Output leakage current	V_BB = 13.5 V, T_J = 25°C V_EN = V_{DIA_EN} = 0 V, V_OUT = 0 V			0.01	0.5	µA
I_OUT(standby)	Output leakage current	V_BB= 13.5 V, T_J = 125°C V_EN = V_{DIA_EN} = 0 V, V_OUT = 0 V				3	µA
I_DIA	Current consumption in diagnostic mode	V_BB = 13.5 V, I_SNS = 0 mA V_EN = 0 V, V_{DIA_EN}= 5 V, V_OUT = 0V			3	6	mA
I_Q	Quiescent current	V_BB = 13.5 V V_EN = V_{DIA_EN} = 5 V, I_OUT = 0 A, V_SELX = 0 V			3	6	mA
t_STBY	Standby mode delay time	V_EN = V_{DIA_EN} = 0 V to Standby			20		ms
R_ON CHARACTERISTICS
R_ON	On-resistance Includes MOSFET and package	T_J = 25°C, 6 V ≤ V_BB ≤ 28 V			9		mΩ
		T_J= 150°C, 6 V ≤ V_BB ≤ 28 V				20	mΩ
		T_J= 25°C, 3 V ≤ V_BB ≤ 6 V				15	mΩ
R_ON(REV)	On-resistance during reverse polarity	T_J= 25°C, -18 V ≤ V_BB ≤ -8 V			9		mΩ
R_ON(REV)	On-resistance during reverse polarity	T_J= 105°C, -18 V ≤ V_BB ≤ -8 V				20	mΩ
CURRENT SENSE CHARACTERISTICS
K_SNS	Current sense ratio I_OUT / I_SNS				4600
I_SNSI	Current sense current and current sense accuracy	V_EN = V_{DIA_EN} = 5 V, V_SEL1 = V_SEL2 = 0 V	I_OUT = 20 A		4.35		mA
			I_OUT = 20 A	–5		5	%
			I_OUT = 8 A		1.74		mA
			I_OUT = 8 A	–5		5	%
			I_OUT = 3 A		0.65		mA
			I_OUT = 3 A	–5		5	%
			I_OUT = 1 A		0.217		mA
			I_OUT = 1 A	–5		5	%
			I_OUT = 300 mA		0.065		mA
			I_OUT = 300 mA	–12		12	%
			I_OUT = 100 mA		0.022		mA
			I_OUT = 100 mA	–42		42	%
T_J SENSE CHARACTERISTICS
I_SNST	Temperature sense current	V_{DIA_EN} = 5 V, V_SEL1 = 5 V, V_SEL2 = 0 V	T_J = –40°C		0.12		mA
			T_J = 25°C		0.85		mA
			T_J = 85°C		1.52		mA
			T_J = 150°C		2.25		mA
dI_SNST/dT	Coefficient				0.0112		mA/°C
V_BB SENSE CHARACTERISTICS
I_SNSV	Voltage sense current	V_{DIA_EN} = 5 V, V_SEL1 = 5 V, V_SEL2= 5 V	V_BB = 3 V		0.26		mA
			V_BB = 8 V		0.69		mA
			V_BB = 13.5 V		1.17		mA
			V_BB = 18 V		1.56		mA
			V_BB = 28 V		2.43		mA
dI_SNSV/dV	Coefficient				0.0867		mA/V
SNS CHARACTERISTICS
I_SNSFH	I_SNSfault high level	V_{DIA_EN} = 5 V, V_SEL1 = 0 V, V_SEL2= 0		6	6.9	7.6	mA
I_SNSleak	I_SNS leakage	V_{DIA_EN} = 0 V		0		1	µA
V_SNSclamp	V_SNS clamp				5.9		V
CURRENT LIMIT CHARACTERISTICS
I_CL	Current Limit	Device Version B/D	T_J = –40°C	75.5	88.8	102.1	A
			T_J = 25°C	68	80	92
			T_J = 150°C	51	60	69
		Device Version A/C/E	T_J = –40°C	16	22.2	27.8	A
			T_J = 25°C	14.4	20	25
			T_J = 150°C	10.8	15	18.8
ST PIN CHARACTERISTICS
V_OL	Open-load detection voltage	V_EN = 0 V, V_{DIA_EN} = 5 V		2	2.5	4	V
t_OL1	OL and STB indication time - switch disabled	From falling edge of EN V_EN= 5 V to 0 V, V_{DIA_EN} = 5 V, V_SELx = 00 I_OUT = 0 mA, V_OUT = 4 V		300	500	700	µs
t_OL2	OL and STB indication time - switch disabled	From rising edge of DIA_EN V_EN = 0 V, V_{DIA_EN} = 0 V to 5 V, V_SELx = 00 I_OUT= 0 mA, V_OUT = 4 V				50	µs
t_OL3	OL and STB indication time - switch disabled	From rising edge of VOUT V_EN = 0 V, V_{DIA_EN} = 5 V, V_SELx = 00 I_OUT = 0 mA, V_OUT = 0 V to 4 V				50	µs
T_ABS	Thermal shutdown			160			°C
T_HYS	Thermal shutdown hysteresis				20		°C
t_RETRY	Retry time	Minimum time from fault shutdown to switch re-enable (for thermal shutdown, current limit, and energy limit)		1	2	3	ms
t_WD	Watchdog timer	Device version E		350	400	450	ms
EN PIN CHARACTERISTICS⁽¹⁾
V_{IL, EN}	Input voltage low level					0.8	V
V_{IH, EN}	Input voltage high level	No GND network Diode		2			V
V_{IHYS, EN}	Input voltage hysteresis	No GND network Diode			250		mV
I_{IL, EN}	Input current low level	V_EN = 0.8 V			0.8		µA
I_{IH, EN}	Input current high level	V_EN= 2.0 V			2		µA
R_EN	Internal pulldown resistor				1		MΩ
DIA_EN PIN CHARACTERISTICS ⁽¹⁾
V_{IL, DIA_EN}	Input voltage low level	No GND network Diode				0.8	V
V_{IH, DIA_EN}	Input voltage high level	No GND network Diode		2			V
V_{IHYS, DIA_EN}	Input voltage hysteresis				250		mV
I_{IL, DIA_EN}	Input current low level	V_{DIA_EN} = 0.8 V			0.8		µA
I_{IH, DIA_EN}	Input current high level	V_{DIA_EN} = 2.0 V			2		µA
R_{DIA_EN}	Internal pulldown resistor				1		MΩ
SEL1 AND SEL2 PIN CHARACTERISTICS ⁽¹⁾
V_{IL, SELx}	Input voltage low level	No GND network Diode				0.8	V
V_{IH, SELx}	Input voltage high level			2			V
V_{IHYS, SELx}	Input voltage hysteresis				250		mV
I_{IL, SELx}	Input current low level	V_SELx = 0.8 V			0.8		µA
I_{IH, SELx}	Input current high level	V_SELx = 2.0 V			2		µA
R_SELx	Internal pulldown resistor				1		MΩ
LATCH PIN CHARACTERISTICS ⁽¹⁾
V_{IL, LATCH}	Input voltage low level	No GND network Diode				0.8	V
V_{IH, LATCH}	Input voltage high level	No GND network Diode		2			V
V_{IHYS, LATCH}	Input voltage hysteresis				250		mV
I_{IL, LATCH}	Input current low level	V_LATCH = 0.8 V			0.8		µA
I_{IH, LATCH}	Input current high level	V_LATCH = 2.0 V			2		µA
R_LATCH	Internal pulldown resistor				1		MΩ
ST PIN CHARACTERISTICS ⁽¹⁾
V_{OL, ST}	Output voltage low level	I_ST = 1 mA				0.4	V
I_STleak	Leakage current	V_ST = 5 V				2	µA

(1) V_BB = 3 to 28 V