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ZHCSE86A October 2015 – October 2015 TMP107-Q1

PRODUCTION DATA.

封裝選項

機械數(shù)據(jù) (封裝 | 引腳)

D|8
- MSOI002K

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

訂購信息

zhcse86a_oa

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
Supply voltage, V+			6	V
Input voltage	I/O1, I/O2	–0.3	(V+) + 0.3	V
	R1, R2	–0.3	6
	ALERT1, ALERT2	–0.3	6
Sink current	ALERT1, ALERT2		10	mA
Temperature	Operating junction	–55	150	°C
Temperature	Storage, T_stg	–60	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per AEC Q100-002⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per AEC Q100-011	±1000	V

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
Supply voltage, V+		1.7	3.3	5.5	V
Operating free-air temperature, T_A		–55		125	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		TMP107-Q1	UNIT
		D (SOIC)
		8 PINS
R_θJA	Junction-to-ambient thermal resistance	116.3	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	62.5	°C/W
R_θJB	Junction-to-board thermal resistance	56.6	°C/W
ψ_JT	Junction-to-top characterization parameter	14.6	°C/W
ψ_JB	Junction-to-board characterization parameter	56.0	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	N/A	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

At T_A = –55°C to 125°C and V+ = +1.7 V to +5.5 V (unless otherwise noted). Typical values at T_A = 25°C and V+ = 3.3 V.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
TEMPERATURE INPUT
	Temperature range		–55		125	°C
	Temperature resolution			0.015625		°C
	Temperature accuracy (error)	–20°C to +70°C; one-shot mode, bus inactive		±0.125	±0.4	°C
		–40°C to +100°C; one-shot mode, bus inactive		±0.125	±0.55
		–55°C to +125°C; one-shot mode, bus inactive		±0.5	±0.7
	ADC resolution			14		Bits
DIGITAL OUTPUT (ALERT1, ALERT2)
V_OL	Low-level output voltage	I_OUT = –1 mA	0	0.02	0.4	V
I_OH	High-level output leakage current	V_O = V+		0.1	1	μA
R_PU	Pullup resistors		75	100	125	kΩ
DIGITAL INPUT/OUTPUT (I/O1, I/O2)
V_IH	High-level input voltage		0.7 (V+)		(V+) + 0.3	V
V_IL	Low-level input voltage		–0.3		0.3 (V+)	V
I_IN	Input current	0 V < V_IN < (V+) + 0.3 V	–1		1	μA
V_OL	Low-level output voltage	I_OUT = –1 mA	0	0.1	0.4	V
V_OH	High-level output voltage	I_OUT = 1 mA	(V+) – 0.4	(V+) – 0.1	V+	V
	Short-circuit current	Short-circuit I/O1 and I/O2 to ground or V+, V+ = 5 V		60		mA
DEVICE TIMING
	Conversion time	One-shot mode	12	15	18	ms
	Conversion rate	Programmable	1/16		62	Conv/s
	Device timeout time	Any communication		35	40	ms
	Device timeout time	Global address-initialize command		1	1.25	s
EEPROM
	Programming time	V+ > 1.8 V		7		ms
	Number of writes	V+ > 1.8 V	1000	100,000		Times
	Data retention time		10			Years
POWER SUPPLY
V+	Operating supply range		1.7	3.3	5.5	V
V+	Operating supply range	EEPROM write	1.8	3.3	5.5	V
I_Q	Quiescent current	ADC conversion on, SMAART wire bus inactive		200	400	μA
		ADC conversion on, SMAART wire bus active (bus baud rate = 57.6 kBd)		300
		ADC conversion off, SMAART wire bus active (bus baud rate = 57.6 kBd)		100
		1 conversion per second average, SMAART wire bus inactive		16	35
		EEPROM write (ADC conversion off)		400
I_SD	Shutdown current	SMAART wire bus inactive (I/O1, I/O2 = V+)		3.8	10	μA
	Power-on reset voltage	Supply voltage rising		1.4		V

7.6 Timing Requirements

		MIN	NOM	MAX	UNIT
FROM HOST TO THE TMP107-Q1
1/t_BAUD	SMAART bus baud rate	4.8		115.4	kBd
t_RISE+ t_JITTER	SMAART bus transition from low to high + edge timing variance			15	% of (1/baud)
t_FALL+ t_JITTER	SMAART bus transition from high to low + edge timing variance			15	% of (1/baud)
FROM THE TMP107-Q1 TO HOST OR NEXT TMP107-Q1 IN DAISY-CHAIN
t_JITTER	Edge timing variance			1	µs
t_SKEW	Average phase shift between IO1 and IO2		33		ns
t_RISE	SMAART bus transition from low to high, 10-pF load		10		ns
t_FALL	SMAART bus transition from high to low, 10-pF load		10		ns