SLVSAF0A August 2010 – May 2015 TLV61225
PRODUCTION DATA.
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Voltage(2) | VIN, L, VOUT, EN, FB | –0.3 | 7.5 | V |
| Temperature | Operating junction temperature, TJ | –40 | 150 | °C |
| Storage, Tstg | –65 | 150 | °C | |
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | 2000 | V |
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | 1500 | |||
| Machine model (MM) | 200 | |||
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| VIN | Supply voltage at VIN | 0.7 | 3.3 | V |
| TA | Operating free air temperature | –40 | 85 | °C |
| TJ | Operating virtual junction temperature | –40 | 125 | °C |
| THERMAL METRIC(1) | TLV61225 | UNIT | |
|---|---|---|---|
| DCK (SOT) | |||
| 6 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 231.9 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 55.8 | °C/W |
| RθJB | Junction-to-board thermal resistance | 77.3 | °C/W |
| ψJT | Junction-to-top characterization parameter | 0.7 | °C/W |
| ψJB | Junction-to-board characterization parameter | 76.4 | °C/W |
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| DC-DC STAGE | |||||||
| VIN | Input voltage range | 0.7 | 3.3 | V | |||
| VIN | Maximum minimum input voltage for start-up | RLoad ≥ 150 Ω, TA = 25°C | 0.7 | V | |||
| VOUT | TLV61225 output voltage | VIN < VOUT | 3.13 | 3.3 | 3.43 | V | |
| ILH | Inductor current ripple | 200 | mA | ||||
| ISW | switch current limit | VOUT = 3.3 V, VIN = 1.2 V | 160 | 400 | mA | ||
| RDSon_HSD | Rectifying switch ON-resistance | VOUT = 3.3 V | 1000 | mΩ | |||
| RDSon_LSD | Main switch ON-resistance | VOUT = 3.3 V | 600 | mΩ | |||
| Line regulation | VIN < VOUT | 0.5% | |||||
| Load regulation | VIN < VOUT | 0.5% | |||||
| IQ | Quiescent current | VIN | IO = 0 mA, VEN = VIN = 1.2 V, VOUT = 3.3 V |
0.5 | 1 | μA | |
| VOUT | 5 | 10 | μA | ||||
| ISD | Shutdown current | VIN | VEN = 0 V, VIN = 1.2 V, VOUT ≥ VIN | 0.2 | 1 | μA | |
| ILKG_VOUT | Leakage current into VOUT | VEN = 0 V, VIN = 1.2 V, VOUT = 3.3 V | 1 | μA | |||
| ILKG_L | Leakage current into L | VEN = 0 V, VIN = 1.2 V, VL = 1.2 V, VOUT ≥ VIN | 0.01 | 0.7 | μA | ||
| IEN | EN input current | Clamped on GND or VIN (VIN < 1.5 V) | 0.005 | 0.1 | μA | ||
| CONTROL STAGE | |||||||
| VIL | Maximum EN input low voltage | VIN ≤ 1.5 V | 0.2 × VIN | V | |||
| VIH | Minimum EN input high voltage | VIN ≤ 1.5 V | 0.8 × VIN | V | |||
| VIL | Maximum EN input low voltage | VIN > 1.5 V | 0.4 | V | |||
| VIH | Minimum EN input high voltage | VIN > 1.5 V | 1.2 | V | |||
| VUVLO | Undervoltage lockout threshold for turnoff | VIN decreasing | 500 | mV | |||
| Undervoltage lockout hysteresis | 50 | mV | |||||
| Overvoltage protection threshold | 5.5 | 7.5 | V | ||||
| Overtemperature protection | 140 | °C | |||||
| Overtemperature hysteresis | 20 | °C | |||||
| PACKAGE | POWER RATING TA ≤ 25°C |
DERATING FACTOR ABOVE TA = 25°C |
|---|---|---|
| DCK | 444 mW | 4.44 mW/°C |
| FIGURE | ||
|---|---|---|
| Minimum of Maximum Output Current | vs Input Voltage | Figure 1 |
| Efficiency | vs Output Current, VIN = [1.2 V; 2.4 V; 3 V] | Figure 2 |
| vs Input Voltage, IOUT = [100 uA; 1 mA; 10 mA; 50 mA] | Figure 3 | |
| Input Current | vs Input Voltage at No Output Load, Device Enabled | Figure 4 |
| Output Voltage | vs Output Current, VIN = [1.2 V; 2.4 V] | Figure 5 |
| vs Input Voltage, Device Disabled, RLOAD = [1 kΩ; 10 kΩ] | Figure 6 |
Figure 1. Minimum of Maximum Output Current vs Input Voltage
Figure 3. Efficiency vs Input Voltage
Figure 5. Output Voltage vs Output Current
Figure 2. Efficiency vs Output Current
Figure 4. No Load Application Input Current vs Input Voltage
Figure 6. Output Voltage vs Input Voltage, Device Disabled