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ZHCSD78 January 2015 TLC2274-HT

PRODUCTION DATA.

封裝選項

機械數(shù)據(jù) (封裝 | 引腳)

PW|14
- MPDS360A

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

訂購信息

zhcsd78_oa

6 Specifications

6.1 Absolute Maximum Ratings⁽¹⁾

over operating free-air temperature range (unless otherwise noted)

			MIN	MAX	UNIT
V_DD+	Supply voltage⁽²⁾			8	V
V_DD–	Supply voltage⁽²⁾			–8	V
V_ID	Differential input voltage⁽³⁾		–16	16	V
V_I	Input voltage⁽²⁾	Any input	V_DD– – 0.3	V_DD+	V
I_I	Input current	Any input	–5	5	mA
I_O	Output current		–50	50	mA
	Total current into V_DD+		–50	50	mA
	Total current out of V_DD−		–50	50	mA
	Duration of short-circuit current at (or below) 25°C⁽⁴⁾		Unlimited
T_A	Operating free-air temperature		–40	150	°C
	Lead temperature 1.6 mm (1/16 inch) from case for 10 s			260	°C
T_stg	Storage temperature		–65	150	°C

(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values, except differential voltages, are with respect to the midpoint between V_DD+ and V_DD–.

(3) Differential voltages are at I_N+ with respect to I_N–. Excessive current will flow if input is brought below V_DD– – 0.3 V.

(4) The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum dissipation rating is not exceeded.

6.2 ESD Ratings

				VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per AEC Q100-002⁽¹⁾		±2500	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per AEC Q100-011	All pins	±1500	V

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V_DD±	Supply voltage	±2.2	±8	V
V_I	Input voltage	V_DD−	V_DD+ −1.5	V
V_IC	Common-mode input voltage	V_DD−	V_DD+ −1.5	V
T_A	Operating free-air temperature	−40	150	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TLC2274	UNIT
		PW
		14 PINS
R_θJA	Junction-to-ambient thermal resistance	106.0	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	35.5
R_θJB	Junction-to-board thermal resistance	47.6
ψ_JT	Junction-to-top characterization parameter	2.4
ψ_JB	Junction-to-board characterization parameter	47.1

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics, V_DD = 5 V

at specified free-air temperature, V_DD = 5 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS		T_A⁽¹⁾	MIN	TYP	MAX	UNIT
V_IO	Input offset voltage	V_IC = 0 V, V_O = 0 V,	V_DD± = ±2.5 V, R_S = 50 Ω	25°C		300	2500	μV
V_IO	Input offset voltage			Full range			3000	μV
αV_IO	Temperature coefficient of input offset voltage			25°C to 125°C		2		μV/°C
	Input offset voltage long-term drift⁽²⁾			25°C		0.002		μV/mo
I_IO	Input offset current			25°C		0.5	60	pA
I_IO	Input offset current			Full range			7000	pA
I_IB	Input bias current			25°C		1		pA
I_IB	Input bias current			Full range				pA
V_ICR	Common-mode input voltage range	R_S = 50 Ω	\|V_IO\| ≤ 5 mV	25°C	0 to 4	−0.3 to 4.2		V
V_ICR	Common-mode input voltage range	R_S = 50 Ω	\|V_IO\| ≤ 5 mV	Full range	0 to 3.5			V
V_OH	High-level output voltage	I_OH = −20 μA		25°C		4.99		V
		I_OH = −200 μA		25°C	4.85	4.93
		I_OH = −200 μA		Full range	4.84
		I_OH = −1 mA		25°C	4.25	4.65
		I_OH = −1 mA		Full range	4.20
V_OL	Low-level output voltage	V_IC = 2.5 V,	I_OL = 50 μA	25°C		0.01		V
		V_IC= 2.5 V,	I_OL = 500 μA	25°C		0.09	0.15
		V_IC= 2.5 V,	I_OL = 500 μA	Full range			0.16
		V_IC = 2.5 V,	I_OL = 5 mA	25°C		0.9	1.5
		V_IC = 2.5 V,	I_OL = 5 mA	Full range			1.6
A_VD	Large-signal differential voltage amplification	V_IC = 2.5 V, V_O = 1 V to 4 V,	R_L = 10 kΩ⁽³⁾	25°C	10	35		V/mV
			R_L = 10 kΩ⁽³⁾	Full range	8
			R_L = 1 MΩ⁽³⁾	25°C		175
r_id	Differential input resistance			25°C		10¹²		Ω
r_i	Common-mode input resistance			25°C		10¹²		Ω
c_i	Common-mode input capacitance	f = 10 kHz,	N package	25°C		8		pF
z_o	Closed-loop output impedance	f = 1 MHz,	A_V= 10	25°C		140		Ω
CMRR	Common-mode rejection ratio	V_IC = 0 V to 2.7 V, V_O = 2.5 V,	R_S = 50 Ω	25°C	70	75		dB
CMRR	Common-mode rejection ratio	V_IC = 0 V to 2.7 V, V_O = 2.5 V,	R_S = 50 Ω	Full range	69			dB
k_SVR	Supply voltage rejection ratio (ΔV_DD/ΔV_IO)	V_DD = 4.4 V to 16 V,		25°C	80	95		dB
k_SVR	Supply voltage rejection ratio (ΔV_DD/ΔV_IO)	V_IC = V_DD/2,	No load	Full range	80			dB
I_DD	Supply current	V_O = 2.5 V,	No load	25°C		4.4	6	mA
I_DD	Supply current	V_O = 2.5 V,	No load	Full range			6	mA

(1) Full range is −40°C to 150°C for thisl part.

(2) Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at T_A = 150°C extrapolated to T_A = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.

(3) Referenced to 2.5 V

6.6 Operating Characteristics, V_DD = 5 V

at specified free-air temperature, V_DD = 5 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS		T_A⁽¹⁾	MIN	TYP	UNIT
SR	Slew rate at unity gain	V_O = 0.5 V to 2.5 V, C_L= 100 pF⁽²⁾	R_L = 10 kΩ⁽²⁾	25°C	2.3	3.6	V/μs
SR	Slew rate at unity gain	V_O = 0.5 V to 2.5 V, C_L= 100 pF⁽²⁾	R_L = 10 kΩ⁽²⁾	Full range	1.2		V/μs
V_n	Equivalent input noise voltage	f = 10 Hz		25°C		50	nV/√Hz
V_n	Equivalent input noise voltage	f = 1 kHz		25°C		9	nV/√Hz
V_N(pp)	Peak-to-peak equivalent input noise voltage	f = 0.1 to 1 Hz		25°C		1	μV
V_N(pp)	Peak-to-peak equivalent input noise voltage	f = 0.1 to 10 Hz		25°C		1.4	μV
I_n	Equivalent input noise current			25°C		0.6	fA/√Hz
THD + N	Total harmonic distortion plus noise	V_O = 0.5V to 2.5V, R_L = 10 kΩ, f = 20 kHz ⁽²⁾	A_V = 1	25°C		0.0013%
			A_V = 10			0.004%
			A_V = 100			0.03%
	Gain-bandwidth product	f = 10 kHz, C_L= 100 pF⁽²⁾	R_L = 10 kΩ⁽²⁾	25°C		2.18	MHz
B_OM	Maximum output-swing bandwidth	V_O(PP) = 2V, R_L = 10 kΩ⁽²⁾	A_V = 1, C_L= 100 pF⁽²⁾	25°C		1	MHz
t_s	Settling time	A_V = -1, Step = 0.5V to 2.5V, R_L = 10 kΩ⁽²⁾ C_L= 100 pF⁽²⁾	To 0.1%	25°C		1.5	μs
t_s	Settling time		To 0.01%	25°C		2.6	μs
φ_m	Phase margin at unity gain	R_L = 10 kΩ	C_L= 100 pF⁽²⁾	25°C		50°
	Gain margin	R_L = 10 kΩ	C_L= 100 pF⁽²⁾	25°C		10	dB

(1) Full range is −40°C to 150°C for this part.

(2) Referenced to 2.5 V

6.7 Electrical Characteristics, V_DD± = ±5 V

at specified free-air temperature, V_DD± = ±5 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS		T_A⁽¹⁾	MIN	TYP	MAX	UNIT
V_IO	Input offset voltage	V_IC = 0 V, R_S = 50 Ω	V_O = 0 V	25°C		300	2500	μV
V_IO	Input offset voltage			Full range			3000	μV
αV_IO	Temperature coefficient of input offset voltage			25°C to 125°C		2		μV/°C
	Input offset voltage long-term drift⁽²⁾			25°C		0.002		μV/mo
I_IO	Input offset current			25°C		0.5	60	pA
I_IO	Input offset current			Full range			7000	pA
I_IB	Input bias current			25°C		1	60	pA
I_IB	Input bias current			Full range			7000	pA
V_ICR	Common-mode input voltage range	R_S = 50 Ω	\|V_IO\| ≤ 5 mV	25°C	−5 to 4	−5.3 to 4.2		V
V_ICR	Common-mode input voltage range	R_S = 50 Ω	\|V_IO\| ≤ 5 mV	Full range	−5 to 3.5			V
V_OM+	Maximum positive peak output voltage	I_O = −20 μA		25°C		4.99		V
		I_O = −200 μA		25°C	4.85	4.93
		I_O = −200 μA		Full range	4.84
		I_O = −1 mA		25°C	4.25	4.65
		I_O = −1 mA		Full range	4.20
V_OM-	Maximum negative peak output voltage	V_IC = 0 V,	I_O = 50 μA	25°C		−4.99		V
		V_IC= 0 V,	I_O = 500 μA	25°C	−4.85	−4.91
		V_IC= 0 V,	I_O = 500 μA	Full range	−4.85
		V_IC = 0 V,	I_O = 5 mA	25°C	−3.5	−4.1
		V_IC = 0 V,	I_O = 5 mA	Full range	−3.45
A_VD	Large-signal differential voltage amplification	V_O = ±4 V,	R_L = 10 kΩ	25°C	20	50		V/mV
			R_L = 10 kΩ	Full range	16
			R_L = 1 MΩ	25°C		300
r_id	Differential input resistance			25°C		10¹²		Ω
r_i	Common-mode input resistance			25°C		10¹²		Ω
c_i	Common-mode input capacitance	f = 10 kHz,	N package	25°C		8		pF
z_o	Closed-loop output impedance	f = 1 MHz,	AV = 10	25°C		130		Ω
CMRR	Common-mode rejection ratio	V_IC = -5 V to 2.7 V, V_O = 0 V,	R_S = 50 Ω	25°C	75	80		dB
CMRR	Common-mode rejection ratio	V_IC = -5 V to 2.7 V, V_O = 0 V,	R_S = 50 Ω	Full range	73			dB
k_SVR	Supply voltage rejection ratio (ΔV_DD/ΔV_IO)	V_DD = ±2.2 V to ±8 V,		25°C	80	95		dB
k_SVR	Supply voltage rejection ratio (ΔV_DD/ΔV_IO)	V_IC = 0V,	No load	Full range	80			dB
I_DD	Supply current	V_O = 0 V,	No load	25°C		4.4	6	mA
I_DD	Supply current	V_O = 0 V,	No load	Full range			6	mA

(1) Full range is −40°C to 150°C for this part.

6.8 Operating Characteristics, V_DD± = ±5 V

at specified free-air temperature, V_DD± = ±5 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS		T_A⁽¹⁾	MIN	TYP	UNIT
SR	Slew rate at unity gain	V_O = ±2.3 V, R_L = 10 kΩ	C_L= 100 pF	25°C	2.3	3.6	V/μs
SR	Slew rate at unity gain	V_O = ±2.3 V, R_L = 10 kΩ	C_L= 100 pF	Full range	1.2		V/μs
V_n	Equivalent input noise voltage	f = 10 Hz		25°C		50	nV/√Hz
V_n	Equivalent input noise voltage	f = 1 kHz		25°C		9	nV/√Hz
V_N(pp)	Peak-to-peak equivalent input noise voltage	f = 0.1 to 1 Hz		25°C		1	μV
V_N(pp)	Peak-to-peak equivalent input noise voltage	f = 0.1 to 10 Hz		25°C		1.4	μV
I_n	Equivalent input noise current			25°C		0.6	fA/√Hz
THD + N	Total harmonic distortion plus noise	V_O = ±2.3 V, f = 20 kHz, R_L = 10 kΩ	A_V = 1	25°C		0.0011%
			A_V = 10			0.004%
			A_V = 100			0.03%
	Gain-bandwidth product	f = 10 kHz, C_L= 100 pF	R_L = 10 kΩ	25°C		2.25	MHz
B_OM	Maximum output-swing bandwidth	V_O(PP) = 4.6 V, R_L = 10 kΩ	A_V = 1, C_L= 100 pF	25°C		0.54	MHz
t_s	Settling time	A_V = -1, Step = -2.3 V to 2.3 V, R_L = 10 kΩ C_L= 100 pF	To 0.1%	25°C		1.5	μs
t_s	Settling time	A_V = -1, Step = -2.3 V to 2.3 V, R_L = 10 kΩ C_L= 100 pF	To 0.01%	25°C		3.2	μs
φ_m	Phase margin at unity gain	R_L = 10 kΩ,	C_L= 100 pF	25°C		52°
	Gain margin	R_L = 10 kΩ,	C_L= 100 pF	25°C		10	dB

(1) Full range is −40°C to 150°C for this part.

A. See data sheet for Absolute Maximum Ratings and minimum Recommended Operating Conditions.

B. Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect life).

Figure 2. TLC2274EPWRQ1 Operating Life Derating Chart

Figure 3. Estimated Wire Bond Life

6.9 Typical Characteristics

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the devices.

Figure 4. Distribution of TLC2274 Input Offset Voltage

Figure 6. Input Offset Voltage vs Common-Mode Voltage

Figure 8. Input Voltage vs Free-Air Temperature

Figure 10. Low-Level Output Voltage vs Low-Level Output Current

T_A = 25°C

Figure 12. Maximum Positive Peak Output Voltage vs Output Current

Figure 14. Maximum Peak-to-Peak Output Voltage vs Frequency

Figure 16. Output Voltage vs Differential Input Voltage

Figure 18. Large-Signal Differential Voltage Amplification vs Load Resistance

Figure 20. Large-Signal Differential Voltage Amplification and Phase Margin vs Frequency

V_DD = ±5 V	V_IC = 2.5 V	V_O = ±4 V
	R_L = 10 kΩ

Figure 22. Large-Signal Differential Voltage Amplification vs Free-Air Temperature

Figure 24. Output Impedance vs Frequency

Figure 26. Common-Mode Rejection Ratio vs Free-Air Temperature

Figure 28. Supply-Voltage Rejection Ratio vs Frequency

Figure 30. Slew Rate vs Load Capacitance

Figure 32. Inverting Large-Signal Pulse Response

Figure 34. Voltage-Follower Large-Signal Pulse Response

Figure 36. Inverting Small-Signal Pulse Response

Figure 38. Voltage-Follower Small-Signal Pulse Response

Figure 40. Equivalent Input Noise Voltage vs Frequency

Figure 42. Noise Voltage Over a 10-s Period

Figure 44. Total Harmonic Distortion Plus Noise vs Frequency

Figure 5. Input Offset Voltage vs Common-Mode Voltage

Figure 7. Input Voltage vs Supply Voltage

T_A = 25°C

Figure 9. High-Level Output Voltage vs High-Level Output Current

T_A = 25°C

Figure 11. Low-Level Output Voltage vs Low-Level Output Current

T_A = 25°C

Figure 13. Maximum Negative Peak Output Voltage vs Output Current

Figure 15. Short-Circuit Output Current vs Supply Voltage

Figure 17. Output Voltage vs Differential Input Voltage

Figure 19. Large-Signal Differential Voltage Amplification and Phase Margin vs Frequency

V_DD = 5 V	V_IC = 2.5 V	V_O = 1 to 4 V
	R_L = 10 kΩ

Figure 21. Large-Signal Differential Voltage Amplification vs Free-Air Temperature

Figure 23. Output Impedance vs Frequency

Figure 25. Common-Mode Rejection Ratio vs Frequency

Figure 27. Supply-Voltage Rejection Ratio vs Frequency

V_DD± = ±2.2 to ±8 V

V_O = 0 V

Figure 29. Supply-Voltage Rejection Ratio vs Free-Air Temperature

V_DD = 5 V	R_L = 10 kΩ	C_L = 100 pF
	A_V = 1

Figure 31. Slew Rate vs Free-Air Temperature

Figure 33. Inverting Large-Signal Pulse Response

Figure 35. Voltage-Follower Large-Signal Pulse Response

Figure 37. Inverting Small-Signal Pulse Response

Figure 39. Voltage-Follower Small-Signal Pulse Response

Figure 41. Equivalent Input Noise Voltage vs Frequency

Figure 43. Integrated Noise Voltage vs Frequency

Figure 45. Gain-Bandwidth Product vs Supply Voltage

封裝選項

機械數(shù)據(jù) (封裝 | 引腳)

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

訂購信息

6 Specifications

6.1 Absolute Maximum Ratings(1)

6.2 ESD Ratings

6.3 Recommended Operating Conditions

6.4 Thermal Information

6.5 Electrical Characteristics, VDD = 5 V

6.6 Operating Characteristics, VDD = 5 V

6.7 Electrical Characteristics, VDD± = ±5 V

6.8 Operating Characteristics, VDD± = ±5 V

6.9 Typical Characteristics

6.1 Absolute Maximum Ratings⁽¹⁾

6.5 Electrical Characteristics, V_DD = 5 V

6.6 Operating Characteristics, V_DD = 5 V

6.7 Electrical Characteristics, V_DD± = ±5 V

6.8 Operating Characteristics, V_DD± = ±5 V