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SLVS220G July 1999 – August 2016 TL7700

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

PW|8
- MPDS568
PS|8
- MSOP001A
DGK|8
- MPDS028E
P|8
- MPDI001B

散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)

PS|8
- QFND376

訂購(gòu)信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
V_CC	Supply voltage⁽²⁾		41	V
V_s	Sense input voltage	–0.3	41	V
V_OH	Output voltage (off state)		41	V
I_OL	Output current (on state)		5	mA
T_J	Operating virtual-junction temperature		150	°C
T_stg	Storage temperature	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to the network ground terminal.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	500	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	1000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

		MIN	MAX	UNIT
V_CC	Supply voltage	1.8	40	V
I_OL	Low-level output current		3	mA
T_A	Operating free-air temperature	–40	85	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TL7700				UNIT
		DGK (VSSOP)	P (PDIP)	PS (SO)	PW (TSSOP)
		8 PINS	8 PINS	8 PINS	8 PINS
R_θJA	Junction-to-ambient thermal resistance	173.8	57.6	112.5	172.9	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	63.1	47.4	64.2	56.6	°C/W
R_θJB	Junction-to-board thermal resistance	93.9	34.7	61.6	101.2	°C/W
ψ_JT	Junction-to-top characterization parameter	8.5	25	25.1	5.2	°C/W
ψ_JB	Junction-to-board characterization parameter	92.5	34.6	60.7	99.6	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

V_CC = 3 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS	T_A	MIN	TYP	MAX	UNIT
V_s	SENSE input voltage		25°C	495	500	505	mV
V_s	SENSE input voltage		–40°C to 85°C	490		510	mV
I_s	SENSE input current	V_s = 0.4 V	25°C	2	2.5	3	µA
I_s	SENSE input current	V_s = 0.4 V	–40°C to 85°C	1.5		3.5	µA
I_CC	Supply current	V_CC = 40 V, V_s = 0.6 V, No load	25°C		0.6	1	mA
V_OL	Low-level output voltage	I_OL = 1.5 mA	25°C			0.4	V
V_OL	Low-level output voltage	I_OL = 3 mA	25°C			0.8	V
I_OH	High-level output current	V_OH = 40 V, V_s = 0.6 V	–40°C to 85°C			1	µA
I_CT	Timing-capacitor charge current	V_s = 0.6 V	25°C	11	15	19	µA

6.6 Switching Characteristics

V_CC = 3 V, T_A = 25°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
t_pi	SENSE pulse duration	C_T = 0.01 µF (See Figure 17)	2			µs
t_po	Output pulse duration	C_T = 0.01 µF (See Figure 17)	0.5	1	1.5	ms
t_r	Output rise time	C_T = 0.01 µF, R_L = 2.2 kΩ, C_L = 100 pF (See Figure 17)			15	µs
t_f	Output fall time	C_T = 0.01 µF, R_L = 2.2 kΩ, C_L = 100 pF (See Figure 17)			0.5	µs
t_pd	Propagation delay time, SENSE to output	C_T = 0.01 µF (See Figure 17)			10	µs