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ZHCSCR8D September 2014 – October 2017 TCA9534

PRODUCTION DATA.

封裝選項

機械數(shù)據(jù) (封裝 | 引腳)

DW|16
- MSOI003I
PW|16
- MPDS361B

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

DW|16
- QFND313D

訂購信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

			MIN	MAX	UNIT
V_CC	Supply voltage		–0.5	6	V
V_I	Input voltage ⁽²⁾		–0.5	6	V
V_O	Output voltage⁽²⁾		–0.5	6	V
I_IK	Input clamp current	V_I < 0		–20	mA
I_OK	Output clamp current	V_O < 0		–20	mA
I_IOK	Input-output clamp current	V_O < 0 or V_O > V_CC		±20	mA
I_OL	Continuous output low current through a single P-port	V_O = 0 to V_CC		50	mA
I_OH	Continuous output high current through a single P-port	V_O = 0 to V_CC		–50	mA
I_CC	Continuous current through GND by all P-ports, INT, and SDA			250	mA
I_CC	Continuous current through V_CC by all P-ports			–160	mA
T_J(MAX)	Maximum junction temperature			100	°C
T_stg	Storage temperature		–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) The input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

				MIN	MAX	UNIT
V_CC	Supply voltage			1.65	5.5	V
V_IH	High-level input voltage	SCL, SDA	V_CC = 1.65 V to 5.5 V	0.7 × V_CC	V_CC⁽¹⁾	V
V_IH	High-level input voltage	A0, A1, A2, P7–P0	V_CC = 1.65 V to 5.5 V	0.7 × V_CC	5.5	V
V_IL	Low-level input voltage	SCL, SDA	V_CC = 1.65 V to 5.5 V	–0.5	0.3 × V_CC	V
		A0, A1, A2, P7–P0	V_CC = 1.65 V to 5.5 V	–0.5	0.3 × V_CC
		A0, A1, A2, P7–P0	V_CC = 3 V to 5.5 V	–0.5	0.2 × V_CC
I_OH	High-level output current	Any P-port, P7–P0			–10	mA
I_OL ⁽²⁾	Low-level output current	P00–P07, P10–P17	T_j ≤ 65°C		25	mA
			T_j ≤ 85°C		18
			T_j ≤ 105°C		9
		INT, SDA	T_j ≤ 85°C		6
		INT, SDA	T_j ≤ 105°C		3
I_CC	Continuous current through GND	All P-ports P7-P0, INT, and SDA			200	mA
I_CC	Continuous current through V_CC	All P-ports P7-P0			–80	mA
T_A	Operating free-air temperature			–40	85	°C

(1) The SCL and SDA pins shall not be at a higher potential than the supply voltage V_CC in the application, or an increase in leakage current, I_I, results.

(2) The values shown apply to specific junction temperatures. See the Calculating Junction Temperature and Power Dissipation section on how to calculate the junction temperature.

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TCA9534		UNIT
		PW (TSSOP)	DW (SOIC)
		16 PINS	16 PINS
R_θJA	Junction-to-ambient thermal resistance	122	92.2	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	56.4	53.8	°C/W
R_θJB	Junction-to-board thermal resistance	67.1	56.9	°C/W
ψ_JT	Junction-to-top characterization parameter	10.8	26.4	°C/W
ψ_JB	Junction-to-board characterization parameter	66.5	56.4	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS		V_CC	MIN	TYP⁽¹⁾	MAX	UNIT
V_IK	Input diode clamp voltage	I_I = –18 mA		1.65 V to 5.5 V	–1.2			V
V_PORR	Power-on reset voltage, V_CC rising	V_I = V_CC or GND, I_O = 0				1.2	1.5	V
V_PORF	Power-on reset voltage, V_CC falling	V_I = V_CC or GND, I_O = 0			0.75	1		V
V_OH	P-port high-level output voltage⁽²⁾	I_OH = –8 mA		1.65 V	1.2			V
				2.3 V	1.8			V
				3 V	2.6
				4.5 V	4.1
		I_OH = –10 mA		1.65 V	1
				2.3 V	1.7
				3 V	2.5
				4.5 V	4
I_OL	SDA⁽⁴⁾	V_OL = 0.4 V		1.65 V to 5.5 V	3			mA
	P port⁽³⁾	V_OL = 0.5 V		1.65 V to 5.5 V	8
	P port⁽³⁾	V_OL = 0.7 V		1.65 V to 5.5 V	10
	INT ⁽⁵⁾	V_OL = 0.4 V		1.65 V to 5.5 V	3
I_I	SCL, SDA	V_I = V_CC or GND		1.65 V to 5.5 V			±1	µA
I_I	A0, A1, A2	V_I = V_CC or GND		1.65 V to 5.5 V			±1	µA
I_IH	P port	V_I = V_CC		1.65 V to 5.5 V			1	µA
I_IL	P port	V_I = GND		1.65 V to 5.5 V			–1	µA
I_CC	Operating mode	V_I = V_CC or GND, I_O = 0, I/O = inputs, f_SCL = 400 kHz, no load		5.5 V		22	40	µA
				3.6 V		11	30
				2.7 V		8	19
				1.95 V		5	11
	Standby mode	V_I = V_CC or GND, I_O = 0, I/O = inputs, f_SCL = 0 kHz, no load	V_I = V_CC	5.5 V		1.5	3.9
				3.6 V		0.9	2.2
				2.7 V		0.6	1.8
				1.95 V		0.4	1.5
			V_I = GND	5.5 V		1.5	8.7
				3.6 V		0.9	4
				2.7 V		0.6	3
				1.95 V		0.4	2.2
C_i	SCL	V_I = V_CC or GND		1.65 V to 5.5 V		3	8	pF
C_io	SDA	V_IO = V_CC or GND		1.65 V to 5.5 V		3	9.5	pF
C_io	P port	V_IO = V_CC or GND		1.65 V to 5.5 V		3.7	9.5	pF

(1) All typical values are at nominal supply voltage (1.8-, 2.5-, 3.3-, or 5-V V_CC) and T_A = 25°C.

(2) Each P-port I/O configured as a high output must be externally limited to a maximum of 10 mA, and the total current sourced by all I/Os (P-ports P7-P0) through V_CC must be limited to a maximum current of 80 mA.

(3) Each P-port I/O configured as a low output must be externally limited to a maximum of 25 mA, and the total current sunk by all I/Os (P-ports P7-P0, INT, and SDA) through GND must be limited to a maximum current of 200 mA.

(4) The SDA pin must be externally limited to a maximum of 12 mA, and the total current sunk by all I/Os (P-ports P7-P0, INT, and SDA) through GND must be limited to a maximum current of 200 mA.

(5) The INT pin must be externally limited to a maximum of 7 mA, and the total current sunk by all I/Os (P-ports P7-P0, INT, and SDA) through GND must be limited to a maximum current of 200 mA.

6.6 I²C Interface Timing Requirements

over operating free-air temperature range (unless otherwise noted) (see Figure 19)

			MIN	MAX	UNIT
STANDARD MODE
f_scl	I²C clock frequency		0	100	kHz
t_sch	I²C clock high time		4		µs
t_scl	I²C clock low time		4.7		µs
t_sp	I²C spike time			50	ns
t_sds	I²C serial-data setup time		250		ns
t_sdh	I²C serial-data hold time		0		ns
t_icr	I²C input rise time			1000	ns
t_icf	I²C input fall time			300	ns
t_ocf	I²C output fall time	10-pF to 400-pF bus		300	ns
t_buf	I²C bus free time between Stop and Start		4.7		µs
t_sts	I²C Start or repeated Start condition setup		4.7		µs
t_sth	I²C Start or repeated Start condition hold		4		µs
t_sps	I²C Stop condition setup		4		µs
t_vd(data)	Valid data time	SCL low to SDA output valid		3.45	µs
t_vd(ack)	Valid data time of ACK condition	ACK signal from SCL low to SDA (out) low		3.45	µs
C_b	I²C bus capacitive load			400	pF
FAST MODE
f_scl	I²C clock frequency		0	400	kHz
t_sch	I²C clock high time		0.6		µs
t_scl	I²C clock low time		1.3		µs
t_sp	I²C spike time			50	ns
t_sds	I²C serial-data setup time		100		ns
t_sdh	I²C serial-data hold time		0		ns
t_icr	I²C input rise time		20	300	ns
t_icf	I²C input fall time		20 × (V_DD / 5.5 V)	300	ns
t_ocf	I²C output fall time	10-pF to 400-pF bus	20 × (V_DD / 5.5 V)	300	ns
t_buf	I²C bus free time between Stop and Start		1.3		µs
t_sts	I²C Start or repeated Start condition setup		0.6		µs
t_sth	I²C Start or repeated Start condition hold		0.6		µs
t_sps	I²C Stop condition setup		0.6		µs
t_vd(data)	Valid data time	SCL low to SDA output valid		0.9	µs
t_vd(ack)	Valid data time of ACK condition	ACK signal from SCL low to SDA (out) low		0.9	µs
C_b	I²C bus capacitive load			400	pF

6.7 Switching Characteristics

over operating free-air temperature range (unless otherwise noted) (see Figure 20 and Figure 21)

PARAMETER		FROM (INPUT)	TO (OUTPUT)	MIN	MAX	UNIT
t_iv	Interrupt valid time	P port	INT		4	µs
t_ir	Interrupt reset delay time	SCL	INT		4	µs
t_pv	Output data valid	SCL	P7–P0		350	ns
t_ps	Input data setup time	P port	SCL	100		ns
t_ph	Input data hold time	P port	SCL	1		µs

6.8 Typical Characteristics

T_A = 25°C (unless otherwise noted)

Figure 1. Supply Current vs Temperature for Different Supply Voltage (V_CC)

Figure 3. Supply Current vs Supply Voltage for Different Temperature (T_A)

Figure 5. I/O Sink Current vs Output Low Voltage for Different Temperature (T_A) for V_CC = 1.8 V

Figure 7. I/O Sink Current vs Output Low Voltage for Different Temperature (T_A) for V_CC = 3.3 V

Figure 9. I/O Sink Current vs Output Low Voltage for Different Temperature (T_A) for V_CC = 5.5 V

Figure 11. I/O Source Current vs Output High Voltage for Different Temperature (T_A) for V_CC = 1.65 V

Figure 13. I/O Source Current vs Output High Voltage for Different Temperature (T_A) for V_CC = 2.5 V

Figure 15. I/O Source Current vs Output High Voltage for Different Temperature (T_A) for V_CC = 5 V

Figure 17. V_CC – V_OH Voltage vs Temperature for
Different V_CC

Figure 2. Standby Supply Current vs Temperature for Different Supply Voltage (V_CC)

Figure 4. I/O Sink Current vs Output Low Voltage for Different Temperature (T_A) for V_CC = 1.65 V

Figure 6. I/O Sink Current vs Output Low Voltage for Different Temperature (T_A) for V_CC = 2.5 V

Figure 8. I/O Sink Current vs Output Low Voltage for Different Temperature (T_A) for V_CC = 5 V

Figure 10. II/O Low Voltage vs Temperature for Different V_CC and I_OL

Figure 12. I/O Source Current vs Output High Voltage for Different Temperature (T_A) for V_CC = 1.8 V

Figure 14. I/O Source Current vs Output High Voltage for Different Temperature (T_A) for V_CC = 3.3 V

Figure 16. I/O Source Current vs Output High Voltage for Different Temperature (T_A) for V_CC = 5.5 V

Figure 18. Δ I_CC vs Temperature for
Different V_CC (V_I = V_CC – 0.6 V)