SCPS145B December 2007 – February 2016 P82B715
PRODUCTION DATA.
| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| VCC | Supply voltage | –0.3 | 12 | V | |
| Vb | I2C bus voltage | Sx or Sy | 0 | VCC | V |
| Buffered bus voltage | Lx or Ly | 0 | VCC | ||
| IO | Continuous output current | Sx or Sy | 60 | mA | |
| Lx or Ly | 60 | ||||
| ICC | Continuous current through VCC or GND | 60 | mA | ||
| Tstg | Storage temperature | –55 | 125 | °C | |
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2500 | V |
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 | |||
| Machine model (MM) | ±400 | |||
| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| VCC | Supply voltage(1) | 4.5 | 12 | V | |
| TA | Operating free-air temperature | –40 | 85 | °C | |
| THERMAL METRIC(1) | P82B715 | UNIT | ||
|---|---|---|---|---|
| D (SOIC) | P (PDIP) | |||
| 8 PINS | 8 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 105.3 | 48.9 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 51.1 | 38.1 | °C/W |
| RθJB | Junction-to-board thermal resistance | 46.2 | 26.1 | °C/W |
| ψJT | Junction-to-top characterization parameter | 8.5 | 15.4 | °C/W |
| ψJB | Junction-to-board characterization parameter | 45.6 | 26 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | N/A | °C/W |
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| ICC | Quiescent supply current | Sx = Sy = VCC | 14 | mA | |||
| VCC = 12 V | 15 | ||||||
| Both I2C inputs low, Both buffered outputs sinking 30 mA |
22 | ||||||
| IIOS | Output sink current on I2C bus | Sx, Sy | VCC > 3 V, VSx, VSy (low) = 0.4 V, VLx, VLy (low) on buffered bus = 0.3 V, ILx, ILy = –3 mA (1) |
2.6 | mA | ||
| IIOL | Output sink current on buffered bus | Lx, Ly | VLx, VLy (low) = 0.4 V, VSx, VSy (low) on I2C bus = 0.3 V |
30 | mA | ||
| 3 V < VCC < 4.5 V, VLx, VLy (low) = 0.4 V to 1.5 V, ISx, ISy sinking on I2C bus < –4 mA |
24 | ||||||
| 3 V < VCC < 4.5 V, VLx, VLy (low) = 1.5 V to VCC, ISx, ISy sinking on I2C bus = –7 mA |
24 | ||||||
| II | Input current from I2C bus | Sx, Sy | ILx, ILy sink on buffered bus = 30 mA | –3.2 | mA | ||
| Input current from buffered bus(1) | Lx, Ly | VCC > 3 V, ISx, ISy sink on I2C bus = 3 mA(1) |
–3 | ||||
| Leakage current on buffered bus | VCC = 3 V to 12 V, VLx, VLy = VCC, VSx, VSy = VCC |
200 | μA | ||||
| Zin/Zout | Input/output impedance | VSx < VLx, Buffer is active | 8 | 10 | 13 | ||
| PARAMETER | TEST CONDITIONS | FROM (INPUT) |
TO (OUTPUT) |
MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|---|---|
| BUFFER DELAY TIMES | ||||||||
| trise/fall | Delay time to VLx voltage crossing VCC/2 for input drive current step ISx at Sx(1) (see Figure 2) | RLx pullup = 270 Ω | ISx
ISy |
VLx
VLy |
250 | ns | ||
| Buffer delay time, switching edges between VLx input and VSx output(2) |
RLx pullup = 4700 Ω | VLx
VLy |
VSx
VSy |
0 | ns | |||