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ZHCSEV2C January 2016 – September 2016 MUX508 , MUX509

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

PW|16
- MPDS361B
D|16
- MPDS178G

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

			MIN	MAX	UNIT
Supply voltage	V_DD		–0.3	40	V
	V_SS		–40	0.3
	V_DD – V_SS			40
Digital input pins⁽²⁾	EN, A0, A1, A2 pins	Voltage	V_SS– 0.3	V_DD+ 0.3	V
Digital input pins⁽²⁾	EN, A0, A1, A2 pins	Current	–30	30	mA
Analog input pins⁽²⁾	Sx, SxA, SxB pins	Voltage	V_SS– 2	V_DD+ 2	V
Analog input pins⁽²⁾	Sx, SxA, SxB pins	Current	–30	30	mA
Analog output pins⁽²⁾	D, DA, DB pins	Voltage	V_SS– 2	V_DD+ 2	V
Analog output pins⁽²⁾	D, DA, DB pins	Current	–30	30	mA
Temperature	Operating, T_A		–55	150	°C
	Junction, T_J			150
	Storage, T_stg		–65	150

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Only one pin at a time

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

			MIN	MAX	UNIT
V_DD⁽¹⁾	Positive power-supply voltage	Dual supply	5	18	V
V_DD⁽¹⁾	Positive power-supply voltage	Single supply	10	36	V
V_SS⁽²⁾	Negative power-supply voltage (dual supply)		–5	–18	V
V_DD – V_SS	Supply voltage		10	36	V
V_S	Source pins voltage⁽³⁾		V_SS	V_DD	V
V_D	Drain pins voltage		V_SS	V_DD	V
V_EN	Enable pin voltage		V_SS	V_DD	V
V_A	Address pins voltage		V_SS	V_DD	V
I_CH	Channel current (T_A = 25°C)		–25	25	mA
T_A	Operating temperature		–40	125	°C

(1) When V_SS = 0 V, V_DDcan range from 10 V to 36 V.

(2) V_DD and V_SS can be any value as long as 10 V ≤ (V_DD – V_SS) ≤ 36 V, and V_DD ≥ 5 V.

(3) V_S is the voltage on all the S pins.

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		MUX50x		UNIT
		PW (TSSOP)	D (SOIC)
		16 PINS	16 PINS
R_θJA	Junction-to-ambient thermal resistance	103.8	78.3	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	36.8	37.2	°C/W
R_θJB	Junction-to-board thermal resistance	49.8	35.7	°C/W
ψ_JT	Junction-to-top characterization parameter	2.7	8.2	°C/W
ψ_JB	Junction-to-board characterization parameter	49.1	35.4	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	n/a	n/a	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics.

7.5 Electrical Characteristics: Dual Supply

at T_A = 25°C, V_DD = 15 V, and V_SS = –15 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
ANALOG SWITCH
	Analog signal range	T_A = –40°C to +125°C		V_SS		V_DD	V
R_ON	On-resistance	V_S = 0 V, I_CH = 1 mA			125	170	Ω
		V_S = ±10 V, I_CH = 1 mA			145	200
			T_A = –40°C to +85°C			230
			T_A = –40°C to +125°C			250
ΔR_ON	On-resistance mismatch between channels	V_S = ±10 V, I_CH = 1 mA			2.4	6	Ω
			T_A = –40°C to +85°C			9
			T_A = –40°C to +125°C			11
R_FLAT	On-resistance flatness	V_S = 10 V, 0 V, –10 V			22	45	Ω
			T_A = –40°C to +85°C			53
			T_A = –40°C to +125°C			58
	On-resistance drift	V_S = 0 V			0.52		%/°C
I_S(OFF)	Input leakage current	Switch state is off, V_S = ±10 V, V_D = ±10 V⁽²⁾		–1	0.01	1	nA
			T_A = –40°C to +85°C	–10		10
			T_A = –40°C to +125°C	–25		25
I_D(OFF)	Output off leakage current	Switch state is off, V_S = ±10 V, V_D = ±10 V⁽²⁾		–1	0.01	1	nA
			T_A = -40°C to +85°C	–10		10
			T_A = -40°C to +125°C	–50		50
I_D(ON)	Output on leakage current	Switch state is on, V_D = ±10 V, V_S = floating		–1	0.01	1	nA
			T_A = –40°C to +85°C	–10		10
			T_A = –40°C to +125°C	–50		50
LOGIC INPUT
V_IH	High-level input voltage			2.0			V
V_IL	Low-level input voltage					0.8	V
I_D	Input current					0.15	µA
SWITCH DYNAMICS⁽¹⁾
t_ON	Enable turn-on time	V_S = ±10 V, R_L = 300 Ω, C_L= 35 pF			88	136	ns
			T_A = –40°C to +85°C			144
			T_A = –40°C to +125°C			151
t_OFF	Enable turn-off time	V_S = ±10 V, R_L = 300 Ω, C_L= 35 pF			63	75	ns
			T_A= –40°C to +85°C			83
			T_A = –40°C to +125°C			90
t_t	Transition time	V_S = 10 V, R_L = 300 Ω, C_L= 35 pF,			92	143	ns
			T_A = –40°C to +85°C			151
			T_A = –40°C to +125°C			157
t_BBM	Break-before-make time delay	V_S = 10 V, R_L = 300 Ω, C_L= 35 pF, T_A = –40°C to +125°C		30	54		ns
Q_J	Charge injection	C_L = 1 nF, R_S = 0 Ω	V_S = 0 V		0.3		pC
Q_J	Charge injection	C_L = 1 nF, R_S = 0 Ω	V_S = –15 V to +15 V		±0.6		pC
	Off-isolation	R_L = 50 Ω, V_S = 1 V_RMS, f = 1 MHz	Nonadjacent channel to D, DA, DB		–96		dB
	Off-isolation	R_L = 50 Ω, V_S = 1 V_RMS, f = 1 MHz	Adjacent channel to D, DA, DB		–85		dB
	Channel-to-channel crosstalk	R_L = 50 Ω, V_S = 1 V_RMS, f = 1 MHz	Nonadjacent channels		–96		dB
	Channel-to-channel crosstalk	R_L = 50 Ω, V_S = 1 V_RMS, f = 1 MHz	Adjacent channels		–88		dB
C_S(OFF)	Input off-capacitance	f = 1 MHz, V_S = 0 V			2.4	2.9	pF
C_D(OFF)	Output off-capacitance	f = 1 MHz, V_S = 0 V	MUX508		7.5	8.4	pF
C_D(OFF)	Output off-capacitance	f = 1 MHz, V_S = 0 V	MUX509		4.3	5	pF
C_D(ON)	Input/Output on-capacitance	f = 1 MHz, V_S = 0 V	MUX508		9.4	10.6	pF
C_D(ON)	Input/Output on-capacitance	f = 1 MHz, V_S = 0 V	MUX509		6.7	7.7	pF
POWER SUPPLY
	V_DD supply current	All V_A = 0 V or 3.3 V, V_S = 0 V, V_EN = 3.3 V,			45	59	µA
			T_A = –40°C to +85°C			62
			T_A = –40°C to +125°C			83
	V_SS supply current	All V_A = 0 V or 3.3 V, V_S = 0 V, V_EN = 3.3 V,			25	34	µA
			T_A = –40°C to +85°C			37
			T_A = –40°C to +125°C			57

(1) Specified by design, not production tested.

(2) When V_S is positive, V_D is negative, and vice versa.

7.6 Electrical Characteristics: Single Supply

at T_A = 25°C, V_DD = 12 V, and V_SS = 0 V (unless otherwise noted)⁽²⁾

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
ANALOG SWITCH
	Analog signal range	T_A = –40°C to +125°C		V_SS		V_DD	V
R_ON	On-resistance	V_S = 10 V, I_CH = 1 mA			235	340	Ω
			T_A = –40°C to +85°C			390
			T_A = –40°C to +125°C			430
ΔR_ON	On-resistance match	V_S = 10 V, I_CH = 1 mA			3.1	12	Ω
			T_A = –40°C to +85°C			19
			T_A = –40°C to +125°C			23
	On-resistance drift	V_S = 10 V			0.47		%/°C
I_S(OFF)	Input leakage current	Switch state is off, V_S = 1 V and V_D = 10 V, or V_S = 10 V and V_D = 1 V⁽¹⁾		–1	0.01	1	nA
			T_A = –40°C to +85°C	–10		10
			T_A = –40°C to +125°C	–25		25
I_D(OFF)	Output off leakage current	Switch state is off, V_S = 1 V and V_D = 10 V, or V_S = 10 V and V_D = 1 V⁽¹⁾		–1	0.01	1	nA
			T_A = –40°C to +85°C	–10		10
			T_A = –40°C to +125°C	–50		50
I_D(ON)	Output on leakage current	Switch state is on, V_D = 1 V and 10 V, V_S = floating		–1	0.01	1	nA
			T_A = –40°C to +85°C	–10		10
			T_A = –40°C to +125°C	–50		50
LOGIC INPUT
V_IH	High-level input voltage			2.0			V
V_IL	Low-level input voltage					0.8	V
I_D	Input current					0.15	µA
SWITCH DYNAMIC CHARACTERISTICS
t_ON	Enable turn-on time	V_S = 8 V, R_L = 300 Ω, C_L= 35 pF			85	140	ns
			T_A = –40°C to +85°C			145
			T_A = –40°C to +125°C			149
t_OFF	Enable turn-off time	V_S = 8 V, R_L = 300 Ω, C_L= 35 pF			48	83	ns
			T_A = –40°C to +85°C			94
			T_A = –40°C to +125°C			102
t_t	Transition time	V_S = 8 V, C_L= 35 pF			87	147	ns
		V_S = 8 V, R_L = 300 Ω, C_L= 35 pF,	T_A = –40°C to +85°C			153
		V_S = 8 V, R_L = 300 Ω, C_L= 35 pF,	T_A = –40°C to +125°C			155
t_BBM	Break-before-make time delay	V_S = 8 V, R_L = 300 Ω, C_L= 35 pF, T_A = –40°C to +125°C		30	54		ns
Q_J	Charge injection	C_L = 1 nF, R_S = 0 Ω	V_S = 6 V		0.15		pC
Q_J	Charge injection	C_L = 1 nF, R_S = 0 Ω	V_S = 0 V to 12 V,		±0.4		pC
	Off-isolation	R_L = 50 Ω, V_S = 1 V_RMS, f = 1 MHz	Nonadjacent channel to D, DA, DB		-96		dB
	Off-isolation	R_L = 50 Ω, V_S = 1 V_RMS, f = 1 MHz	Adjacent channel to D, DA, DB		-85		dB
	Channel-to-channel crosstalk	R_L = 50 Ω, V_S = 1 V_RMS, f = 1 MHz	Nonadjacent channels		–96		dB
	Channel-to-channel crosstalk	R_L = 50 Ω, V_S = 1 V_RMS, f = 1 MHz	Adjacent channels		-88		dB
C_S(OFF)	Input off-capacitance	f = 1 MHz, V_S = 6 V			2.7	3.2	pF
C_D(OFF)	Output off-capacitance	f = 1 MHz, V_S = 6 V	MUX508		9.1	10	pF
C_D(OFF)	Output off-capacitance	f = 1 MHz, V_S = 6 V	MUX509		5	5.7	pF
C_D(ON)	Input/Output on-capacitance	f = 1 MHz, V_S = 6 V	MUX508		10.8	12	pF
C_D(ON)	Input/Output on-capacitance	f = 1 MHz, V_S = 6 V	MUX509		6.9	8	pF
POWER SUPPLY
	V_DD supply current	All V_A = 0 V or 3.3 V, V_S= 0 V, V_EN = 3.3 V			42	53	µA
			T_A = –40°C to +85°C			56
			T_A = –40°C to +125°C			77
	V_SS supply current	All V_A = 0 V or 3.3 V, V_S = 0 V, V_EN = 3.3 V			23	38	µA
			T_A = –40°C to +85°C			31
			T_A = –40°C to +125°C			51

(1) When V_S is 1 V, V_D is 10 V, and vice versa.

(2) Specified by design, not production tested.

7.7 Typical Characteristics

at T_A= 25°C, V_DD = 15 V, and V_SS = –15 V (unless otherwise noted)

Figure 1. On-Resistance vs Source or Drain Voltage

Figure 3. On-Resistance vs Source or Drain Voltage

Figure 5. On-Resistance vs Source or Drain Voltage


V_DD = 24 V, V_SS = 0 V

Figure 7. On-Resistance vs Source or Drain Voltage


V_DD = 15 V, V_SS = –15 V

Figure 9. Leakage Current vs Temperature


MUX508, source-to-drain

Figure 11. Charge Injection vs Source Voltage


	Drain-to-source

Figure 13. Charge Injection vs Source or Drain Voltage

Figure 15. Off Isolation vs Frequency

Figure 17. THD+N vs Frequency


MUX508, V_DD = 15 V, V_SS = –15 V

Figure 19. Capacitance vs Source Voltage


MUX508, V_DD = 30 V, V_SS = 0 V

Figure 21. Capacitance vs Source Voltage


MUX508, V_DD = 12 V, V_SS = 0 V

Figure 23. Capacitance vs Source Voltage

Figure 25. Source Current vs Drain Current


V_DD = 15 V, V_SS = –15 V

Figure 2. On-Resistance vs Source or Drain Voltage


V_DD = 12 V, V_SS = 0 V

Figure 4. On-Resistance vs Source or Drain Voltage

Figure 6. On-Resistance vs Source or Drain Voltage


V_DD = 12 V, V_SS = –12 V

Figure 8. On-Resistance vs Source or Drain Voltage


V_DD = 12 V, V_SS = 0 V

Figure 10. Leakage Current vs Temperature


MUX509, source-to-drain

Figure 12. Charge Injection vs Source Voltage

Figure 14. Turn-On and Turn-Off Times vs Temperature

Figure 16. Crosstalk vs Frequency

Figure 18. On Response vs Frequency


MUX509, V_DD = 15 V, V_SS = –15 V

Figure 20. Capacitance vs Source Voltage


MUX509, V_DD = 30 V, V_SS = 0 V

Figure 22. Capacitance vs Source Voltage


MUX509, V_DD = 12 V, V_SS = 0 V

Figure 24. Capacitance vs Source Voltage