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ZHCSFU9A November 2016 – November 2017 MUX506 , MUX507

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

DW|28
- MPDS175A
PW|28
- MPDS364

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

DW|28
- QFND317C

訂購信息

6.5 Electrical Characteristics: Dual Supply

at T_A = 25°C, V_DD = 15 V, and V_SS = –15 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS			MIN	TYP	MAX	UNIT
ANALOG SWITCH
	Analog signal range	T_A = –40°C to +125°C			V_SS		V_DD	V
R_ON	On-resistance	V_S = 0 V, I_S = –1 mA				125	170	Ω
		V_S = ±10 V, I_S = –1 mA				145	200
			T_A = –40°C to +85°C				230
			T_A = –40°C to +125°C				250
ΔR_ON	On-resistance mismatch between channels	V_S = ±10 V, I_S = –1 mA				6	9	Ω
			T_A = –40°C to +85°C				14
			T_A = –40°C to +125°C				16
R_FLAT	On-resistance flatness	V_S = 10 V, 0 V, –10 V				20	45	Ω
			T_A = –40°C to +85°C				53
			T_A = –40°C to +125°C				58
	On-resistance drift	V_S = 0 V				0.62		Ω/°C
I_S(OFF)	Input leakage current	Switch state is off, V_S = ±10 V, V_D = ±10 V⁽²⁾			–1	–0.001	1	nA
			T_A = –40°C to +85°C		–10		10
			T_A = –40°C to +125°C		–25		25
I_D(OFF)	Output off-leakage current	Switch state is off, V_S = ±10 V, V_D = ±10 V⁽²⁾			–1	–0.01	1	nA
			T_A = -40°C to +85°C		–10		10
			T_A = -40°C to +125°C		–25		25
I_D(ON)	Output on-leakage current	Switch state is on, V_D = ±10 V, V_S = floating			–1	–0.01	1	nA
			T_A = –40°C to +85°C		–10		10
			T_A = –40°C to +125°C		–50		50
LOGIC INPUT
V_IH	Logic voltage high				2			V
V_IL	Logic voltage low						0.8	V
I_D	Input current						0.1	µA
SWITCH DYNAMICS⁽¹⁾
t_ON	Enable turn-on time	V_S = ±10 V, R_L = 300 Ω, C_L= 35 pF				82	136	ns
			T_A = –40°C to +85°C				145
			T_A = –40°C to +125°C				151
t_OFF	Enable turn-off time	V_S = ±10 V, R_L = 300 Ω, C_L= 35 pF				63	78	ns
			T_A= –40°C to +85°C				89
			T_A = –40°C to +125°C				97
t_t	Transition time	V_S = 10 V, R_L = 300 Ω, C_L= 35 pF,				97	143	ns
			T_A = –40°C to +85°C				151
			T_A = –40°C to +125°C				157
t_BBM	Break-before-make time delay	V_S = 10 V, R_L = 300 Ω, C_L= 35 pF, T_A = –40°C to +125°C			30	54		ns
Q_J	Charge injection	C_L = 1 nF, R_S = 0 Ω	V_S = 0 V	TSSOP package		0.31		pC
			V_S = 0 V	SOIC package		0.67
			V_S = –15 V to +15 V	TSSOP package		±0.9
			V_S = –15 V to +15 V	SOIC package		±1.1
	Off-isolation	R_L = 50 Ω, V_S = 1 V_RMS, f = 1 MHz	Nonadjacent channel to D, DA, DB	TSSOP package		–98		dB
			Nonadjacent channel to D, DA, DB	SOIC package		–94
			Adjacent channel to D, DA, DB	TSSOP package		–94
			Adjacent channel to D, DA, DB	SOIC package		–88
	Channel-to-channel crosstalk	R_L = 50 Ω, V_S = 1 V_RMS, f = 1 MHz	Nonadjacent channels	TSSOP package		–100		dB
			Nonadjacent channels	SOIC package		–96
			Adjacent channels	TSSOP package		–88
			Adjacent channels	SOIC package		–83
C_S(OFF)	Input off-capacitance	f = 1 MHz, V_S = 0 V				2.1	3	pF
C_D(OFF)	Output off-capacitance	f = 1 MHz, V_S = 0 V	MUX506			11.1	12.2	pF
C_D(OFF)	Output off-capacitance	f = 1 MHz, V_S = 0 V	MUX507			6.4	7.5	pF
C_S(ON), C_D(ON)	Output on-capacitance	f = 1 MHz, V_S = 0 V	MUX506			13.5	15	pF
C_S(ON), C_D(ON)	Output on-capacitance	f = 1 MHz, V_S = 0 V	MUX507			8.7	10.2	pF
POWER SUPPLY
	V_DD supply current	All V_A = 0 V or 3.3 V, V_S = 0 V, V_EN = 3.3 V,				45	59	µA
			T_A = –40°C to +85°C				62
			T_A = –40°C to +125°C				85
	V_SS supply current	All V_A = 0 V or 3.3 V, V_S = 0 V, V_EN = 3.3 V,				26	34	µA
			T_A = –40°C to +85°C				37
			T_A = –40°C to +125°C				58

(1) Specified by design; not subject to production testing.

(2) When V_S is positive, V_D is negative, and vice versa.