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ZHCSED4 November 2015 ISO7320-Q1 , ISO7321-Q1

PRODUCTION DATA.

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請(qǐng)參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。

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訂購(gòu)信息

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

			MIN	MAX	UNIT
V_CC	Supply voltage⁽²⁾	V_CC1 , V_CC2	–0.5	6	V
	Voltage⁽²⁾	INx, OUTx	–0.5	V_CC+ 0.5⁽³⁾	V
I_O	Output current			±15	mA
T_J	Junction temperature			150	°C
T_stg	Storage temperature		–65	150	°C

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to network ground terminal and are peak voltage values.

(3) Maximum voltage must not exceed 6 V.

6.2 ESD Ratings

				VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per AEC Q100-002⁽¹⁾		±4000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per AEC Q100-011		±1500	V

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

		MIN	NOM	MAX	UNIT
V_CC1, V_CC2	Supply voltage,	3		5.5	V
I_OH	High-level output current	–4			mA
I_OL	Low-level output current			4	mA
V_IH	High-level input voltage	2		5.5	V
V_IL	Low-level input voltage	0		0.8	V
t_ui	Input pulse duration	40			ns
1 / t_ui	Signaling rate	0		25	Mbps
T_J ⁽¹⁾	Junction temperature			136	°C
T_A	Ambient temperature	-40	25	125	°C

(1) To maintain the recommended operating conditions for T_J, see the Thermal Information table.

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		ISO732x-Q1	UNIT
		D (SOIC)
		8 PINS
R_θ_JA	Junction-to-ambient thermal resistance	121	°C/W
R_θJCtop	Junction-to-case (top) thermal resistance	67.9	°C/W
R_θJB	Junction-to-board thermal resistance	61.6	°C/W
ψ_JT	Junction-to-top characterization parameter	21.5	°C/W
ψ_JB	Junction-to-board characterization parameter	61.1	°C/W
R_θJCbot	Junction-to-case (bottom) thermal resistance	N/A	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics—5-V Supply

V_CC1 and V_CC2 at 5 V ± 10% (over recommended operating conditions unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_OH	High-level output voltage	I_OH = –4 mA; see Figure 11	V_CCO⁽¹⁾– 0.5	4.7		V
V_OH	High-level output voltage	I_OH= –20 μA; see Figure 11	V_CCO⁽¹⁾ – 0.1	5		V
V_OL	Low-level output voltage	I_OL = 4 mA; see Figure 11		0.2	0.4	V
V_OL	Low-level output voltage	I_OL = 20 μA; see Figure 11		0	0.1	V
V_I(HYS)	Input threshold voltage hysteresis			460		mV
I_IH	High-level input current	IN = V_CC			10	μA
I_IL	Low-level input current	IN = 0 V	–10			μA
CMTI	Common-mode transient immunity	V_I = V_CC or 0 V; see Figure 13.	25	65		kV/μs

(1) V_CCO is supply voltage, V_CC1 or V_CC2, for the output channel being measured.

6.6 Supply Current Characteristics—5-V Supply

All inputs switching with square wave clock signal for dynamic I_CC measurement. V_CC1 and V_CC2 at 5 V ± 10% (over recommended operating conditions unless otherwise noted)

PARAMETER		TEST CONDITIONS		SUPPLY CURRENT	TYP	MAX	UNIT
ISO7320-Q1
	Supply current for V_CC1 and V_CC2	DC to 1 Mbps	DC Input: V_I = V_CC or 0 V, AC Input: C_L = 15 pF	I_CC1	0.4	0.9	mA
		DC to 1 Mbps	DC Input: V_I = V_CC or 0 V, AC Input: C_L = 15 pF	I_CC2	2	3.2
		10 Mbps	C_L = 15 pF	I_CC1	0.8	1.4
		10 Mbps	C_L = 15 pF	I_CC2	3.2	4.4
		25 Mbps	C_L = 15 pF	I_CC1	1.4	2.3
		25 Mbps	C_L = 15 pF	I_CC2	4.9	6.8
ISO7321-Q1
	Supply current for V_CC1 and V_CC2	DC to 1 Mbps	DC Input: V_I = V_CC or 0 V, AC Input: C_L = 15 pF	I_CC1 , I_CC2	1.7	2.8	mA
		10 Mbps	C_L = 15 pF	I_CC1 , I_CC2	2.5	3.7
		25 Mbps	C_L = 15 pF	I_CC1 , I_CC2	3.7	5.4

6.7 Electrical Characteristics—3.3 V

V_CC1 and V_CC2 at 3.3 V ± 10% (over recommended operating conditions unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_OH	High-level output voltage	I_OH = –4 mA; see Figure 11	V_CCO⁽¹⁾– 0.5	3		V
V_OH	High-level output voltage	I_OH= –20 μA; see Figure 11	V_CCO⁽¹⁾– 0.1	3.3		V
V_OL	Low-level output voltage	I_OL = 4 mA; see Figure 11		0.2	0.4	V
V_OL	Low-level output voltage	I_OL = 20 μA; see Figure 11		0	0.1	V
V_I(HYS)	Input threshold voltage hysteresis			450		mV
I_IH	High-level input current	IN = V_CC			10	μA
I_IL	Low-level input current	IN = 0 V	–10			μA
CMTI	Common-mode transient immunity	V_I = V_CC or 0 V; see Figure 13	25	50		kV/μs

(1) V_CCO is supply voltage, V_CC1 or V_CC2, for the output channel being measured.

6.8 Supply Current Characteristics—3.3-V Supply

All inputs switching with square wave clock signal for dynamic I_CC measurement. V_CC1 and V_CC2 at 3.3 V ± 10% (over recommended operating conditions unless otherwise noted)

PARAMETER		TEST CONDITIONS		SUPPLY CURRENT	TYP	MAX	UNIT
ISO7320-Q1
	Supply current for V_CC1 and V_CC2	DC to 1 Mbps	DC Input: V_I = V_CC or 0 V, AC Input: C_L = 15 pF	I_CC1	0.2	0.5	mA
		DC to 1 Mbps	DC Input: V_I = V_CC or 0 V, AC Input: C_L = 15 pF	I_CC2	1.5	2.5
		10 Mbps	C_L = 15 pF	I_CC1	0.5	0.8
		10 Mbps	C_L = 15 pF	I_CC2	2.2	3.2
		25 Mbps	C_L = 15 pF	I_CC1	0.9	1.4
		25 Mbps	C_L = 15 pF	I_CC2	3.3	4.7
ISO7321-Q1
	Supply current for V_CC1 and V_CC2	DC to 1 Mbps	DC Input: V_I = V_CC or 0 V, AC Input: C_L = 15 pF	I_CC1 , I_CC2	1.2	2	mA
		10 Mbps	C_L = 15 pF	I_CC1 , I_CC2	1.7	2.5
		25 Mbps	C_L = 15 pF	I_CC1 , I_CC2	2.5	3.6

6.9 Power Dissipation Characteristics

V_CC1 = V_CC2 = 5.5 V, T_J = 150°C, C_L = 15 pF, input a 12.5 MHz 50% duty-cycle square wave (unless otherwise noted)

PARAMETER		MAX	UNIT
P_D	Maximum power dissipation by ISO7320-Q1	56	mW
P_D1	Maximum power dissipation by side-1 of ISO7320-Q1	15	mW
P_D2	Maximum power dissipation by side-2 of ISO7320-Q1	41	mW
P_D	Maximum power dissipation by ISO7321-Q1	67	mW
P_D1	Maximum power dissipation by side-1 of ISO7321-Q1	33.5	mW
P_D2	Maximum power dissipation by side-2 of ISO7321-Q1	33.5	mW

6.10 Switching Characteristics—5-V Supply

V_CC1 and V_CC2 at 5 V ± 10% (over recommended operating conditions unless otherwise noted)

PARAMETER			TEST CONDITIONS	MIN	TYP	MAX	UNIT
t_PLH, t_PHL	Propagation delay time		See Figure 11	20	33	57	ns
PWD⁽¹⁾	Pulse width distortion \|t_PHL – t_PLH\|		See Figure 11			4	ns
t_sk(o)⁽²⁾	Channel-to-channel output skew time	ISO7320-Q1				2	ns
t_sk(o)⁽²⁾	Channel-to-channel output skew time	ISO7321-Q1				17	ns
t_sk(pp) ⁽³⁾	Part-to-part skew time					23	ns
t_r	Output signal rise time		See Figure 11		2.4		ns
t_f	Output signal fall time		See Figure 11		2.1		ns
t_fs	Fail-safe output delay time from input power loss		See Figure 12		7.5		μs

(1) Also known as pulse skew.

(2) t_sk(o) is the skew between outputs of a single device with all driving inputs connected together and the outputs switching in the same direction while driving identical loads.

(3) t_sk(pp) is the magnitude of the difference in propagation delay times between any terminals of different devices switching in the same direction while operating at identical supply voltages, temperature, input signals and loads.

6.11 Switching Characteristics—3.3-V Supply

V_CC1 and V_CC2 at 3.3 V ± 10% (over recommended operating conditions unless otherwise noted)

PARAMETER			TEST CONDITIONS	MIN	TYP	MAX	UNIT
t_PLH, t_PHL	Propagation delay time		See Figure 11	22	37	66	ns
PWD⁽¹⁾	Pulse width distortion \|t_PHL – t_PLH\|		See Figure 11			3	ns
t_sk(o)⁽²⁾	Channel-to-channel output skew time	ISO7320-Q1				3	ns
t_sk(o)⁽²⁾	Channel-to-channel output skew time	ISO7321-Q1				16	ns
t_sk(pp) ⁽³⁾	Part-to-part skew time					28	ns
t_r	Output signal rise time		See Figure 11		3.1		ns
t_f	Output signal fall time		See Figure 11		2.6			ns
t_fs	Fail-safe output delay time from input power loss		See Figure 12		7.4		μs

(1) Also known as pulse skew.

(2) t_sk(o) is the skew between outputs of a single device with all driving inputs connected together and the outputs switching in the same direction while driving identical loads.